US20040094283A1 - Processes for producing a sputtering target from a silicon-based alloy, a sputtering target - Google Patents

Processes for producing a sputtering target from a silicon-based alloy, a sputtering target Download PDF

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Publication number
US20040094283A1
US20040094283A1 US10/654,557 US65455703A US2004094283A1 US 20040094283 A1 US20040094283 A1 US 20040094283A1 US 65455703 A US65455703 A US 65455703A US 2004094283 A1 US2004094283 A1 US 2004094283A1
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US
United States
Prior art keywords
casting
sputtering target
silicon
alloy
based alloy
Prior art date
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Abandoned
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US10/654,557
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English (en)
Inventor
Martin Weigert
Josef Heindel
Uwe Konietzka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC HERAEUS & Co KG
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Assigned to W.C. HERAEUS & CO., KG reassignment W.C. HERAEUS & CO., KG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HEINDEL, JOSEF, KONIETZKA, UWE, WEIGERT, MARTIN
Publication of US20040094283A1 publication Critical patent/US20040094283A1/en
Assigned to W. C. HERAEUS GMBH & CO. KG reassignment W. C. HERAEUS GMBH & CO. KG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: WEIGERT, MARTIN, HEINDEL, JOSEF, KONIETZKA, UWE
Priority to US11/012,982 priority Critical patent/US20050092455A1/en
Priority to US11/357,525 priority patent/US20060207740A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D15/00—Casting using a mould or core of which a part significant to the process is of high thermal conductivity, e.g. chill casting; Moulds or accessories specially adapted therefor
    • B22D15/02—Casting using a mould or core of which a part significant to the process is of high thermal conductivity, e.g. chill casting; Moulds or accessories specially adapted therefor of cylinders, pistons, bearing shells or like thin-walled objects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/15—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting by using vacuum

Definitions

  • the invention concerns processes for producing a sputtering target from a silicon-based alloy with an aluminum content of 5-50 wt. %, a sputtering target and its use.
  • Silicon-based alloys with an Al content of a few wt. % have long been known for use as sputtering targets in coating technology, for example, see U.S. Pat. No. 5,094,288 A, and DE 198 10 246 A1.
  • rotating targets are also frequently used to produce reactively sputtered Si 3 N 4 or SiO 2 (EP 00 70 899). These rotating targets are usually produced by plasma spraying techniques (U.S. Pat. No. 5,853,816 A), in which either mixtures of Si and Al elemental powders or alloy powder (DE 101 40 589) are sprayed onto a support tube.
  • the SiAl tubular sputtering targets obtained in this way can be produced only up to a thickness of about 6-8 mm Si(Al) wall thickness, since the walls break at greater thicknesses due to the high thermal stress to which they are subjected during plasma spraying.
  • DE 100 63 383 C1 describes a process for casting metal tubular targets, in which the outer target coating consists of a metal with a melting point of at most 800° C., and the casting material runs into the mold from below.
  • the object of the present invention is to provide a process for producing a tubular sputtering target and a sputtering target that can be produced as inexpensively as possible.
  • a further object of the invention is to specify a use for the target.
  • this object is achieved by a process in which a sputtering target is produced from a silicon-based alloy with an Al content of 5-50 wt. %.
  • the target material is produced by a casting technique in which the material is melted and vacuum-cast, such that the casting is carried out in a hollow cylindrical casting mold.
  • the casting is carried out in a thin-walled casting mold.
  • the wall thickness of the hollow cylindrical mold is only slightly greater than the desired target wall thickness.
  • the hollow cylindrical mold is filled by top-casting. Surprisingly, despite the extraordinarily broad melting range of 577° C. to a maximum of 1,380° C., one obtains a macroscopically homogeneous casting with only slight porosity and, above all, after removal of the casting mold, a crack-free tubular section.
  • the head of the tubular casting is separated.
  • the casting is machined to the necessary target dimensions on both the outside and inside diameter.
  • the entire tubular target is then constructed in such a way that the tubular sections described above are centrically positioned around the support tube and integrated into a complete target by soldering or cementing on the support tube.
  • FIG. 1 shows the casting process schematically.
  • FIG. 2 shows a cross section of a tubular sputtering target.
  • a hollow cylindrical graphite mold is produced. It consists of a graphite core 1 with a diameter of 131 mm and an outer wall 2 with an inside diameter of 158 mm, an outside diameter of 170 mm, and a height of 600 mm.
  • An alloy of 90 wt. % silicon and 10 wt. % aluminum is melted 3 in a vacuum. After complete melting of the alloy components, the temperature of the melt is stabilized at 1,430° C.
  • the graphite mold is preheated to 300° C. and brought into the vacuum melting chamber, and the molten alloy is poured into the mold cavity 7 by a mold funnel or hopper 4 . After solidification of the melt and cooling of the casting to below 300° C., the mold can be removed from the furnace.
  • Both the inner core of the mold and the outer wall of the mold can be removed from the casting by a hydraulic press.
  • the top of the cylindrical casting is sawed off to a length of 100 mm.
  • the inside diameter of the casting is hollowed out to 134 mm by turning, and the outside diameter is turned to 154 mm.
  • the inner surface of the turned casting is metallized by electrochemical deposition with nickel strike and copper.
  • the metallized Si—Al tubular sections 5 are wetted with indium solder and slid onto the likewise metallized and prewetted support tube 8 .
  • the entire target which consists of seven SiAl tubular segments and the support tube, is heated to the soldering temperature of 180° C., and the space between the outside diameter of the inner tube and the inside diameter of the SiAl castings is filled with molten indium 6 .
  • the finished target can be installed in a commercial tubular cathode and used to produce oxidic or nitridic silicon coatings.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
US10/654,557 2002-11-14 2003-09-03 Processes for producing a sputtering target from a silicon-based alloy, a sputtering target Abandoned US20040094283A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US11/012,982 US20050092455A1 (en) 2002-11-14 2004-12-15 Processes for producing a sputtering target from a silicon-based alloy, a sputtering target
US11/357,525 US20060207740A1 (en) 2002-11-14 2006-02-17 Processes for producing a sputtering target from a silicon-based alloy, a sputtering target

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10253319A DE10253319B3 (de) 2002-11-14 2002-11-14 Verfahren zum Herstellen eines Sputtertargets aus einer Si-Basislegierung, sowie die Verwendung des Sputtertargets
DE10253319.9 2002-11-14

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US11/012,982 Division US20050092455A1 (en) 2002-11-14 2004-12-15 Processes for producing a sputtering target from a silicon-based alloy, a sputtering target
US11/357,525 Continuation-In-Part US20060207740A1 (en) 2002-11-14 2006-02-17 Processes for producing a sputtering target from a silicon-based alloy, a sputtering target

Publications (1)

Publication Number Publication Date
US20040094283A1 true US20040094283A1 (en) 2004-05-20

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US10/654,557 Abandoned US20040094283A1 (en) 2002-11-14 2003-09-03 Processes for producing a sputtering target from a silicon-based alloy, a sputtering target
US11/012,982 Abandoned US20050092455A1 (en) 2002-11-14 2004-12-15 Processes for producing a sputtering target from a silicon-based alloy, a sputtering target

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US11/012,982 Abandoned US20050092455A1 (en) 2002-11-14 2004-12-15 Processes for producing a sputtering target from a silicon-based alloy, a sputtering target

Country Status (7)

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US (2) US20040094283A1 (enExample)
EP (1) EP1447458B1 (enExample)
JP (1) JP2004162179A (enExample)
CN (1) CN100537829C (enExample)
AT (1) ATE329064T1 (enExample)
DE (2) DE10253319B3 (enExample)
PL (1) PL204234B1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1666631A3 (de) * 2004-12-02 2006-08-16 W.C. Heraeus GmbH Rohrförmiges Sputtertarget
US20070062809A1 (en) * 2005-09-21 2007-03-22 Soleras Ltd. Rotary sputtering target, apparatus for manufacture, and method of making
US20070128546A1 (en) * 2005-12-01 2007-06-07 Eastman Kodak Company Imageable members with improved chemical resistance
WO2012146302A1 (en) * 2011-04-29 2012-11-01 Praxair S.T. Technology, Inc. Method of forming a cylindrical sputter target assembly
CN115354290A (zh) * 2022-09-01 2022-11-18 中核四0四有限公司 一种放射性靶件的制造方法及系统

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004060423B4 (de) * 2004-12-14 2016-10-27 Heraeus Deutschland GmbH & Co. KG Rohrtarget und dessen Verwendung
DE102006009749A1 (de) * 2006-03-02 2007-09-06 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH Targetanordnung
EP1933391A1 (de) * 2006-12-11 2008-06-18 Applied Materials, Inc. Verfahren zur Herstellung einer SiN:H-Schicht auf einem Substrat
DE102006060512A1 (de) * 2006-12-19 2008-06-26 W.C. Heraeus Gmbh Sputtertargetanordnung
RU2344019C1 (ru) * 2007-04-16 2009-01-20 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт авиационных материалов" (ФГУП "ВИАМ") Способ получения литых трубных изделий из сплавов на основе никеля и/или кобальта
RU2340426C1 (ru) * 2007-04-16 2008-12-10 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт авиационных материалов" (ФГУП "ВИАМ") Способ получения литого трубного катода из сплавов на основе алюминия для ионно-плазменного нанесения покрытий
EP2488677B1 (en) * 2009-10-12 2013-08-28 Gradel S.à.r.L. Method and apparatus for production of rotatable sputtering targets
JP5428741B2 (ja) * 2009-10-19 2014-02-26 東ソー株式会社 円筒形スパッタリングターゲットの製造方法
CN102352483A (zh) * 2011-11-15 2012-02-15 江苏美特林科特殊合金有限公司 一种真空溅射镀膜用硅铝合金中空旋转靶材的制备方法
CN102430718A (zh) * 2011-12-26 2012-05-02 昆山全亚冠环保科技有限公司 用于制备铝及铝基合金旋转靶材的模具及制作方法
CN106180652B (zh) * 2016-09-09 2019-02-15 西京学院 一种钛合金薄壁壳体铸坯精加工模具及其加工方法
CN110218983A (zh) * 2019-06-25 2019-09-10 杨晔 磁控溅射旋转靶材的绑定方法
CN111118437A (zh) * 2019-12-31 2020-05-08 广州市尤特新材料有限公司 一种旋转硅磷合金靶材及其制备方法与应用

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US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US5094288A (en) * 1990-11-21 1992-03-10 Silicon Casting, Inc. Method of making an essentially void-free, cast silicon and aluminum product
US5853816A (en) * 1992-07-15 1998-12-29 Emiel Vanderstraeten Method of coating a sputter cathode with a layer of material to be applied to a substrate by sputtering
US20030089482A1 (en) * 2000-12-19 2003-05-15 W.C. Heraeus Gmbh & Co. Kg Process for producing a tube-shaped cathode sputtering target
US20030103857A1 (en) * 2001-08-18 2003-06-05 W.C. Heraeus Gmbh & Co. Kg Sputter target made of a silicon alloy and process for producing a sputter target
US6581669B2 (en) * 1998-03-10 2003-06-24 W.C. Heraeus Gmbh & Co., Kg Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation

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Publication number Priority date Publication date Assignee Title
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US5094288A (en) * 1990-11-21 1992-03-10 Silicon Casting, Inc. Method of making an essentially void-free, cast silicon and aluminum product
US5853816A (en) * 1992-07-15 1998-12-29 Emiel Vanderstraeten Method of coating a sputter cathode with a layer of material to be applied to a substrate by sputtering
US6581669B2 (en) * 1998-03-10 2003-06-24 W.C. Heraeus Gmbh & Co., Kg Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation
US20030089482A1 (en) * 2000-12-19 2003-05-15 W.C. Heraeus Gmbh & Co. Kg Process for producing a tube-shaped cathode sputtering target
US6719034B2 (en) * 2000-12-19 2004-04-13 W. C. Heraeus Gmbh & Co. Kg Process for producing a tube-shaped cathode sputtering target
US20030103857A1 (en) * 2001-08-18 2003-06-05 W.C. Heraeus Gmbh & Co. Kg Sputter target made of a silicon alloy and process for producing a sputter target

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1666631A3 (de) * 2004-12-02 2006-08-16 W.C. Heraeus GmbH Rohrförmiges Sputtertarget
US20070062809A1 (en) * 2005-09-21 2007-03-22 Soleras Ltd. Rotary sputtering target, apparatus for manufacture, and method of making
US7922066B2 (en) * 2005-09-21 2011-04-12 Soleras, LTd. Method of manufacturing a rotary sputtering target using a mold
US20070128546A1 (en) * 2005-12-01 2007-06-07 Eastman Kodak Company Imageable members with improved chemical resistance
WO2012146302A1 (en) * 2011-04-29 2012-11-01 Praxair S.T. Technology, Inc. Method of forming a cylindrical sputter target assembly
CN115354290A (zh) * 2022-09-01 2022-11-18 中核四0四有限公司 一种放射性靶件的制造方法及系统

Also Published As

Publication number Publication date
JP2004162179A (ja) 2004-06-10
DE50303674D1 (de) 2006-07-20
PL204234B1 (pl) 2009-12-31
ATE329064T1 (de) 2006-06-15
DE10253319B3 (de) 2004-05-27
EP1447458B1 (de) 2006-06-07
EP1447458A2 (de) 2004-08-18
EP1447458A3 (de) 2004-08-25
PL363401A1 (en) 2004-05-17
CN100537829C (zh) 2009-09-09
CN1500907A (zh) 2004-06-02
US20050092455A1 (en) 2005-05-05

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AS Assignment

Owner name: W.C. HERAEUS & CO., KG, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WEIGERT, MARTIN;HEINDEL, JOSEF;KONIETZKA, UWE;REEL/FRAME:014477/0242

Effective date: 20030808

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Owner name: W. C. HERAEUS GMBH & CO. KG, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WEIGERT, MARTIN;HEINDEL, JOSEF;KONIETZKA, UWE;REEL/FRAME:015724/0765;SIGNING DATES FROM 20040812 TO 20040816

STCB Information on status: application discontinuation

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