JP2004162179A - Ｓｉベースの合金からなるスパッタターゲットの製造法、この種のスパッタターゲットおよびその使用 - Google Patents

Ｓｉベースの合金からなるスパッタターゲットの製造法、この種のスパッタターゲットおよびその使用 Download PDF

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Publication number
JP2004162179A
JP2004162179A JP2003381454A JP2003381454A JP2004162179A JP 2004162179 A JP2004162179 A JP 2004162179A JP 2003381454 A JP2003381454 A JP 2003381454A JP 2003381454 A JP2003381454 A JP 2003381454A JP 2004162179 A JP2004162179 A JP 2004162179A
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JP
Japan
Prior art keywords
tube
sputter target
casting
target
based alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2003381454A
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English (en)
Japanese (ja)
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JP2004162179A5 (enExample
Inventor
Martin Dr Weigert
ヴァイゲルト マーティン
Josef Heindel
ハインデル ヨーゼフ
Uwe Konietzka
コニーツカ ウーヴェ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
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WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Publication of JP2004162179A publication Critical patent/JP2004162179A/ja
Publication of JP2004162179A5 publication Critical patent/JP2004162179A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D15/00—Casting using a mould or core of which a part significant to the process is of high thermal conductivity, e.g. chill casting; Moulds or accessories specially adapted therefor
    • B22D15/02—Casting using a mould or core of which a part significant to the process is of high thermal conductivity, e.g. chill casting; Moulds or accessories specially adapted therefor of cylinders, pistons, bearing shells or like thin-walled objects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/15—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting by using vacuum

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2003381454A 2002-11-14 2003-11-11 Ｓｉベースの合金からなるスパッタターゲットの製造法、この種のスパッタターゲットおよびその使用 Pending JP2004162179A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10253319A DE10253319B3 (de) 2002-11-14 2002-11-14 Verfahren zum Herstellen eines Sputtertargets aus einer Si-Basislegierung, sowie die Verwendung des Sputtertargets

Publications (2)

Publication Number Publication Date
JP2004162179A true JP2004162179A (ja) 2004-06-10
JP2004162179A5 JP2004162179A5 (enExample) 2006-12-28

Family

ID=32185716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003381454A Pending JP2004162179A (ja) 2002-11-14 2003-11-11 Ｓｉベースの合金からなるスパッタターゲットの製造法、この種のスパッタターゲットおよびその使用

Country Status (7)

Country Link
US (2) US20040094283A1 (enExample)
EP (1) EP1447458B1 (enExample)
JP (1) JP2004162179A (enExample)
CN (1) CN100537829C (enExample)
AT (1) ATE329064T1 (enExample)
DE (2) DE10253319B3 (enExample)
PL (1) PL204234B1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008523251A (ja) * 2004-12-14 2008-07-03 ヴェー ツェー ヘレーウス ゲゼルシャフト ミット ベシュレンクテル ハフツング ターゲット管と支持管との間に配置された結合層を備える管状ターゲット
JP2011084795A (ja) * 2009-10-19 2011-04-28 Tosoh Corp 円筒形スパッタリングターゲットの製造方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004058316A1 (de) * 2004-12-02 2006-06-08 W.C. Heraeus Gmbh Rohrförmiges Sputtertarget
US7922066B2 (en) * 2005-09-21 2011-04-12 Soleras, LTd. Method of manufacturing a rotary sputtering target using a mold
US7247418B2 (en) * 2005-12-01 2007-07-24 Eastman Kodak Company Imageable members with improved chemical resistance
DE102006009749A1 (de) * 2006-03-02 2007-09-06 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH Targetanordnung
EP1933391A1 (de) * 2006-12-11 2008-06-18 Applied Materials, Inc. Verfahren zur Herstellung einer SiN:H-Schicht auf einem Substrat
DE102006060512A1 (de) * 2006-12-19 2008-06-26 W.C. Heraeus Gmbh Sputtertargetanordnung
RU2344019C1 (ru) * 2007-04-16 2009-01-20 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт авиационных материалов" (ФГУП "ВИАМ") Способ получения литых трубных изделий из сплавов на основе никеля и/или кобальта
RU2340426C1 (ru) * 2007-04-16 2008-12-10 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт авиационных материалов" (ФГУП "ВИАМ") Способ получения литого трубного катода из сплавов на основе алюминия для ионно-плазменного нанесения покрытий
EP2488677B1 (en) * 2009-10-12 2013-08-28 Gradel S.à.r.L. Method and apparatus for production of rotatable sputtering targets
EP2702186A1 (en) * 2011-04-29 2014-03-05 Praxair S.T. Technology, Inc. Method of forming a cylindrical sputter target assembly
CN102352483A (zh) * 2011-11-15 2012-02-15 江苏美特林科特殊合金有限公司 一种真空溅射镀膜用硅铝合金中空旋转靶材的制备方法
CN102430718A (zh) * 2011-12-26 2012-05-02 昆山全亚冠环保科技有限公司 用于制备铝及铝基合金旋转靶材的模具及制作方法
CN106180652B (zh) * 2016-09-09 2019-02-15 西京学院 一种钛合金薄壁壳体铸坯精加工模具及其加工方法
CN110218983A (zh) * 2019-06-25 2019-09-10 杨晔 磁控溅射旋转靶材的绑定方法
CN111118437A (zh) * 2019-12-31 2020-05-08 广州市尤特新材料有限公司 一种旋转硅磷合金靶材及其制备方法与应用
CN115354290B (zh) * 2022-09-01 2024-01-23 中核四0四有限公司 一种放射性靶件的制造方法及系统

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04184732A (ja) * 1990-11-20 1992-07-01 Seiko Epson Corp スパッタリングターゲットおよび、そのスパッタリングターゲットを用いた保護膜
JPH0539566A (ja) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
JPH0631431A (ja) * 1992-07-17 1994-02-08 Hitchiner Mfg Co Inc 反重力鋳込み装置および方法
JPH07228967A (ja) * 1994-02-17 1995-08-29 Mitsubishi Materials Corp 長尺円筒状スパッタリングターゲット
JPH09206918A (ja) * 1996-01-25 1997-08-12 Ald Vacuum Technol Gmbh 複数の鋳造物を同時に鋳造して方向性凝固する方法および装置
JP2000026961A (ja) * 1998-03-10 2000-01-25 Leybold Materials Gmbh スパッタタ―ゲット及びその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
ES8402188A1 (es) * 1982-04-15 1984-01-16 Creusot Loire Procedimiento de fabricacion de un lingote hueco de acero.
JPS61124566A (ja) * 1984-11-19 1986-06-12 Mitsubishi Metal Corp スパツタリング用Ａｌ−Ｓｉ系合金タ−ゲツト板材の製造法
US5094288A (en) * 1990-11-21 1992-03-10 Silicon Casting, Inc. Method of making an essentially void-free, cast silicon and aluminum product
JPH0551730A (ja) * 1991-03-19 1993-03-02 Mitsubishi Materials Corp 蒸着用素材またはスパツタリング用ターゲツト素材の製造方法
BE1007067A3 (nl) * 1992-07-15 1995-03-07 Emiel Vanderstraeten Besloten Sputterkathode en werkwijze voor het vervaardigen van deze kathode.
DE4243757A1 (de) * 1992-12-23 1994-06-30 Leybold Materials Gmbh Target für eine Kathodenzerstäubungsanlage aus einer ferromagnetischen Legierung
JP3618005B2 (ja) * 1994-08-23 2005-02-09 三井金属鉱業株式会社 回転カソード用スパッタリングターゲットの製造方法
US6581669B2 (en) * 1998-03-10 2003-06-24 W.C. Heraeus Gmbh & Co., Kg Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation
ATE430636T1 (de) * 1998-12-28 2009-05-15 Ultraclad Corp Verfahren zur herstellung eines silizium/aluminiumsputtertargets
DE10043748B4 (de) * 2000-09-05 2004-01-15 W. C. Heraeus Gmbh & Co. Kg Zylinderförmiges Sputtertarget, Verfahren zu seiner Herstellung und Verwendung
DE10063383C1 (de) * 2000-12-19 2002-03-14 Heraeus Gmbh W C Verfahren zur Herstellung eines Rohrtargets und Verwendung
DE10140589A1 (de) * 2001-08-18 2003-02-27 Heraeus Gmbh W C Sputtertarget aus einer Siliziumlegierung und Verfahren zur Herstellung eines Sputtertargets

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04184732A (ja) * 1990-11-20 1992-07-01 Seiko Epson Corp スパッタリングターゲットおよび、そのスパッタリングターゲットを用いた保護膜
JPH0539566A (ja) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
JPH0631431A (ja) * 1992-07-17 1994-02-08 Hitchiner Mfg Co Inc 反重力鋳込み装置および方法
JPH07228967A (ja) * 1994-02-17 1995-08-29 Mitsubishi Materials Corp 長尺円筒状スパッタリングターゲット
JPH09206918A (ja) * 1996-01-25 1997-08-12 Ald Vacuum Technol Gmbh 複数の鋳造物を同時に鋳造して方向性凝固する方法および装置
JP2000026961A (ja) * 1998-03-10 2000-01-25 Leybold Materials Gmbh スパッタタ―ゲット及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008523251A (ja) * 2004-12-14 2008-07-03 ヴェー ツェー ヘレーウス ゲゼルシャフト ミット ベシュレンクテル ハフツング ターゲット管と支持管との間に配置された結合層を備える管状ターゲット
JP2011084795A (ja) * 2009-10-19 2011-04-28 Tosoh Corp 円筒形スパッタリングターゲットの製造方法

Also Published As

Publication number Publication date
DE50303674D1 (de) 2006-07-20
PL204234B1 (pl) 2009-12-31
ATE329064T1 (de) 2006-06-15
DE10253319B3 (de) 2004-05-27
EP1447458B1 (de) 2006-06-07
US20040094283A1 (en) 2004-05-20
EP1447458A2 (de) 2004-08-18
EP1447458A3 (de) 2004-08-25
PL363401A1 (en) 2004-05-17
CN100537829C (zh) 2009-09-09
CN1500907A (zh) 2004-06-02
US20050092455A1 (en) 2005-05-05

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