JP2004137475A - ボラジン系樹脂の製造方法、ボラジン系樹脂組成物、絶縁被膜及びその形成方法 - Google Patents
ボラジン系樹脂の製造方法、ボラジン系樹脂組成物、絶縁被膜及びその形成方法 Download PDFInfo
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- JP2004137475A JP2004137475A JP2003317573A JP2003317573A JP2004137475A JP 2004137475 A JP2004137475 A JP 2004137475A JP 2003317573 A JP2003317573 A JP 2003317573A JP 2003317573 A JP2003317573 A JP 2003317573A JP 2004137475 A JP2004137475 A JP 2004137475A
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- Prior art keywords
- group
- borazine
- based resin
- resin composition
- catalyst
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims abstract description 62
- 238000000576 coating method Methods 0.000 title claims abstract description 34
- 239000011248 coating agent Substances 0.000 title claims abstract description 33
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- 238000009413 insulation Methods 0.000 title abstract description 8
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- 239000012535 impurity Substances 0.000 claims abstract description 20
- 239000007787 solid Substances 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 3
- 229910052796 boron Inorganic materials 0.000 claims description 78
- 239000003054 catalyst Substances 0.000 claims description 67
- 125000003118 aryl group Chemical group 0.000 claims description 55
- 125000000217 alkyl group Chemical group 0.000 claims description 42
- 239000011347 resin Substances 0.000 claims description 39
- 229920005989 resin Polymers 0.000 claims description 39
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 38
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 33
- 239000002904 solvent Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 17
- 239000011949 solid catalyst Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
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Images
Abstract
【解決手段】 メモリキャパシタセル8に備わる層間絶縁膜5,7(絶縁被膜)は、シリコンウェハ1上に設けられたゲート電極3と対向電極8Cとの間に形成されたものである。層間絶縁膜5,7は、例えば有機ケイ素ボラジン系ポリマーとエチルベンゼンとを含んでおり、固形分濃度が0.5質量%以上であって且つ金属不純物含有量が30ppm以下とされたボラジン系樹脂組成物をスピンコートで塗布し乾燥させて得られる。
【選択図】 図4
Description
先ず、本製造方法で製造されるボラジン系樹脂について説明する。本製造方法において、B,B',B"−トリアルキニルボラジン類及びヒドロシラン類をモノマー成分として用い、それらを重合することにより製造されるボラジン系樹脂は、主鎖又は側鎖にボラジン骨格を有する重合体(以下、かかる構造の重合体を単に「ボラジン系樹脂」という。)である。
(ボラジン系樹脂組成物(C))
(絶縁皮膜の形成方法、絶縁皮膜及び電子部品)
(ボラジン系樹脂組成物1の製造)
B,B',B"−トリエチニル−N,N',N"−トリメチルボラジン0.1g(0.50mmol)、p−ビス(ジメチルシリル)ベンゼン0.1g(0.50mmol)をエチルベンゼン4mlに溶解し、化合物系担体に触媒を担持させた担持触媒である5%白金/アルミナ0.4g(白金換算で0.1mmol)を加え、窒素下50℃で7日間撹拌した。反応液の一部を取り出し、ガスクロマトグラフィー(GC)分析を行ったところ、モノマーであるB,B',B"−トリエチニル−N,N',N"−トリメチルボラジンとp−ビス(ジメチルシリル)ベンゼンのピークがほぼ消失していることを確認された。
(ボラジン系樹脂組成物2の製造)
B,B',B"−トリエチニル−N,N',N"−トリメチルボラジン0.1g(0.50mmol)、1,3,5,7−テトラメチルシクロテトラシロキサン0.12g(0.50mmol)をエチルベンゼン4mlに溶解し、化合物系担体に触媒を担持させた担持触媒である5%白金/アルミナ0.4g(白金換算で0.1mmol)を加え、窒素下50℃で7日間撹拌した。反応液の一部を取り出し、ガスクロマトグラフィー(GC)分析を行ったところ、モノマーであるB,B',B"−トリエチニル−N,N',N"−トリメチルボラジンのピークがほぼ消失していることを確認した。また、GPC分析から生成物の分子量(標準ポリスチレン基準)は、Mn=3000(Mw/Mn=2.2)であった。白金/アルミナ触媒を含む反応液をADVANTEC社製ディスポーザブルメンブランフィルターユニット(フィルターの平均孔径:0.5μm)で濾過し、ボラジン系樹脂組成物2を得た。
(ボラジン系樹脂組成物3の製造)
化合物系担体に触媒を担持させた担持触媒として、Polymer Journal、34、97−102(2002)に記載のポリマー担持白金触媒(Polym−CH2SH/H2PtCl6)(白金換算で0.01mmol)を用いた以外は実施例1と同様の方法でボラジン系樹脂組成物3を得た。
固体触媒として、炭素系担体に触媒を担持させた触媒である白金炭素触媒を用いた以外は実施例1と同様の方法でボラジン系樹脂組成物を得たが、ADVANTEC社製ディスポーザブルメンブランフィルターユニット(フィルターの平均孔径:0.5μm)による濾過では、濾液に白金炭素触媒の残留が認められたので、フィルターの平均孔径を0.2μmとして上記ユニットにより再濾過を行い、ボラジン系樹脂組成物4を得た。
(ボラジン系樹脂組成物5の製造)
B,B',B"−トリエチニル−N,N',N"−トリメチルボラジン0.50mmol、p−ビス(ジメチルシリル)ベンゼン0.50mmolをエチルベンゼン8mlに溶解し、均一系金属触媒の白金ジビニルテトラメチルジシロキサンのキシレン溶液(白金2%含有)10μlを加え、窒素下室温で3日間撹拌した。反応液の一部を取り出し、ガスクロマトグラフィー(GC)分析を行なったところ、モノマーであるB,B',B"−トリエチニル−N,N',N"−トリメチルボラジンとp−ビス(ジメチルシリル)ベンゼンのピークは消失していることを確認した。また、GPC分析から生成物の分子量(標準ポリスチレン基準)は、Mn=4300(Mw/Mn=2.5)であった。この反応液をボラジン系樹脂組成物5とした。
(絶縁被膜1の製造)
実施例1で得たボラジン系樹脂組成物1をフィルター濾過し、濾液を低抵抗率シリコンウェハ(基体;抵抗率<10Ωcm)上に滴下してスピンコートした。次いで、このシリコンウェハを窒素雰囲気中ホットプレートで200℃で1時間加熱した後、300℃で30分、400℃で30分間ベークして、本発明の絶縁被膜1を得た。
(絶縁被膜2の製造)
ボラジン系樹脂組成物1の代わりに実施例2で得たボラジン系樹脂組成物2を用いたこと以外は実施例5と同様にして本発明の絶縁被膜2を得た。
(絶縁被膜3の製造)
ボラジン系樹脂組成物1の代わりに実施例3で得たボラジン系樹脂組成物3を用いたこと以外は実施例5と同様にして本発明の絶縁被膜3を得た。
(絶縁被膜4の製造)
(絶縁被膜5の製造)
ボラジン系樹脂組成物1の代わりに比較例1で得たボラジン系樹脂組成物5を用いたこと以外は実施例5と同様にして絶縁被膜5を得た。
(ボラジン系樹脂組成物6の製造)
B,B’,B”−トリス(1’−プロピニル)−N,N’,N”−トリメチルボラジン0.1g(0.50mmol)、1,3,5,7−テトラメチルシクロテトラシロキサン0.12g(0.50mmol)をエチルベンゼン4mlに溶解し、化合物系担体に触媒を担持させた担持触媒である5%白金/アルミナ0.4g(白金換算で0.1mmol)を加え、窒素下50℃で7日間撹拌した。反応液の一部を取り出し、ガスクロマトグラフィー(GC)分析を行ったところ、モノマーであるB,B’,B”−トリス(1’−プロピニル)−N,N’,N”−トリメチルボラジンおよび1,3,5,7−テトラメチルシクロテトラシロキサンのピークがほぼ消失していることを確認した。また、GPC分析から生成物の分子量(標準ポリスチレン基準)は、Mn=7000(Mw/Mn=5.0)であった。白金/アルミナ触媒を含む反応液をADVANTEC社製ディスポーザブルメンブランフィルターユニット(フィルターの平均孔径:0.5μm)で濾過し、ボラジン系樹脂組成物6を得た。
(絶縁被膜6の製造)
ボラジン系樹脂組成物1の代わりに実施例9で得たボラジン系樹脂組成物6を用いたこと以外は実施例5と同様にして本発明の絶縁被膜6を得た。
各実施例及び各比較例で得た各絶縁被膜の比誘電率を測定した。ここで、本発明における絶縁被膜の「比誘電率」とは、23℃±2℃、湿度40±10%の雰囲気下で測定された値をいい、Al金属とN型低抵抗率基板(Siウエハ)間の電荷容量の測定から求められる。
絶縁被膜の比誘電率=3.597×10-2×電荷容量(pF)×絶縁被膜の膜厚(μm)、
に代入し、絶縁被膜の比誘電率を算出した。なお、絶縁被膜の膜厚としては、ガートナー製のエリプソメーターL116Bで測定した値を用いた。
Claims (11)
- 主鎖又は側鎖にボラジン骨格を有する重合体であるボラジン系樹脂を製造する方法であって、
B,B',B"−トリアルキニルボラジン類とヒドロシラン類とを、固体触媒の存在下に重合させる第1の工程と、
前記第1の工程を実施した後に、前記固体触媒を除去する第2の工程と、
を備えるボラジン系樹脂の製造方法。 - 前記固体触媒は、化合物系担体に触媒を担持させた担持触媒である、請求項1記載のボラジン系樹脂の製造方法。
- 主鎖又は側鎖にボラジン骨格を有する重合体と、該重合体を溶解可能な溶剤とを含んでおり、固形分濃度が0.5質量%以上であり、且つ、金属不純物含有量が30ppm以下である、ボラジン系樹脂組成物。
- 前記重合体が請求項1〜4のいずれか一項に記載のボラジン系樹脂の製造方法により製造されて成るボラジン系樹脂である、
請求項5記載のボラジン系樹脂組成物。 - 前記重合体が下記式(4);
で表される繰り返し単位を有するものである、
請求項5又は6記載のボラジン系樹脂組成物。 - 基体上に絶縁被膜を形成する方法であって、
請求項5〜7のいずれか一項に記載のボラジン系樹脂組成物を基体上に塗布して塗布膜を形成し、該塗布膜を乾燥せしめる、絶縁被膜の形成方法。 - 基体上に設けられており、請求項8記載の絶縁被膜の形成方法により形成されて成る絶縁被膜。
- 前記絶縁被膜は、前記基体上に設けられた複数の導電性層のうち互いに隣設された導電性層の間に形成されたものである、請求項9記載の絶縁被膜。
- 請求項9又は10に記載の絶縁被膜が形成されて成る電子部品。
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