JP2004119883A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2004119883A
JP2004119883A JP2002284329A JP2002284329A JP2004119883A JP 2004119883 A JP2004119883 A JP 2004119883A JP 2002284329 A JP2002284329 A JP 2002284329A JP 2002284329 A JP2002284329 A JP 2002284329A JP 2004119883 A JP2004119883 A JP 2004119883A
Authority
JP
Japan
Prior art keywords
power supply
circuit block
circuit
semiconductor device
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002284329A
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English (en)
Japanese (ja)
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JP2004119883A5 (enExample
Inventor
Hirotomo Ishii
石井　啓友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002284329A priority Critical patent/JP2004119883A/ja
Priority to US10/670,342 priority patent/US20040120087A1/en
Publication of JP2004119883A publication Critical patent/JP2004119883A/ja
Publication of JP2004119883A5 publication Critical patent/JP2004119883A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2002284329A 2002-09-27 2002-09-27 半導体装置 Pending JP2004119883A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002284329A JP2004119883A (ja) 2002-09-27 2002-09-27 半導体装置
US10/670,342 US20040120087A1 (en) 2002-09-27 2003-09-26 Semiconductor device including a plurality of power domains

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002284329A JP2004119883A (ja) 2002-09-27 2002-09-27 半導体装置

Publications (2)

Publication Number Publication Date
JP2004119883A true JP2004119883A (ja) 2004-04-15
JP2004119883A5 JP2004119883A5 (enExample) 2005-02-17

Family

ID=32277924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002284329A Pending JP2004119883A (ja) 2002-09-27 2002-09-27 半導体装置

Country Status (2)

Country Link
US (1) US20040120087A1 (enExample)
JP (1) JP2004119883A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006238074A (ja) * 2005-02-25 2006-09-07 Oki Electric Ind Co Ltd 異電源間インターフェースおよび半導体集積回路
US7307822B2 (en) 2003-12-22 2007-12-11 Kabushiki Kaisha Toshiba Semiconductor integrated circuit apparatus
US7872500B2 (en) 2008-01-30 2011-01-18 Kabushiki Kaisha Toshiba Semiconductor device
US7974051B2 (en) 2007-04-12 2011-07-05 Seiko Epson Corporation Integrated circuit device and electronic instrument
WO2015194482A1 (ja) * 2014-06-20 2015-12-23 ザインエレクトロニクス株式会社 半導体装置
JP2018085921A (ja) * 2017-11-28 2018-05-31 パナソニックＩｐマネジメント株式会社 電流計測器、計測器付き分電盤用キャビネットおよび分電盤

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4647294B2 (ja) * 2004-11-26 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
KR101054946B1 (ko) * 2005-02-23 2011-08-08 삼성전자주식회사 전압 레벨 조정 기능을 가진 시스템 온 칩 및 전압 레벨 조정 방법
WO2007027833A2 (en) * 2005-09-02 2007-03-08 Cypress Semiconductor Corp. Circuit, system, and method for multiplexing signals with reduced jitter
JP4986459B2 (ja) * 2006-01-24 2012-07-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US7705404B2 (en) * 2006-12-20 2010-04-27 Amazing Microelectronic Corporation Electrostatic discharge protection device and layout thereof
JP4337903B2 (ja) * 2007-04-12 2009-09-30 セイコーエプソン株式会社 集積回路装置および電子機器
JP2009130119A (ja) * 2007-11-22 2009-06-11 Toshiba Corp 半導体集積回路
CN114356012A (zh) * 2021-12-31 2022-04-15 龙迅半导体（合肥）股份有限公司 一种电路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168735A (ja) * 2001-11-30 2003-06-13 Hitachi Ltd 半導体集積回路装置
US6770938B1 (en) * 2002-01-16 2004-08-03 Advanced Micro Devices, Inc. Diode fabrication for ESD/EOS protection

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7307822B2 (en) 2003-12-22 2007-12-11 Kabushiki Kaisha Toshiba Semiconductor integrated circuit apparatus
JP2006238074A (ja) * 2005-02-25 2006-09-07 Oki Electric Ind Co Ltd 異電源間インターフェースおよび半導体集積回路
US7974051B2 (en) 2007-04-12 2011-07-05 Seiko Epson Corporation Integrated circuit device and electronic instrument
US7872500B2 (en) 2008-01-30 2011-01-18 Kabushiki Kaisha Toshiba Semiconductor device
WO2015194482A1 (ja) * 2014-06-20 2015-12-23 ザインエレクトロニクス株式会社 半導体装置
JP2016006837A (ja) * 2014-06-20 2016-01-14 ザインエレクトロニクス株式会社 半導体装置
CN106415818A (zh) * 2014-06-20 2017-02-15 哉英电子股份有限公司 半导体装置
CN106415818B (zh) * 2014-06-20 2019-06-25 哉英电子股份有限公司 半导体装置
US10504860B2 (en) 2014-06-20 2019-12-10 Thine Electronics, Inc. Semiconductor device
JP2018085921A (ja) * 2017-11-28 2018-05-31 パナソニックＩｐマネジメント株式会社 電流計測器、計測器付き分電盤用キャビネットおよび分電盤

Also Published As

Publication number Publication date
US20040120087A1 (en) 2004-06-24

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