JP2004048067A - 発光部品およびその製造方法 - Google Patents

発光部品およびその製造方法 Download PDF

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Publication number
JP2004048067A
JP2004048067A JP2003353149A JP2003353149A JP2004048067A JP 2004048067 A JP2004048067 A JP 2004048067A JP 2003353149 A JP2003353149 A JP 2003353149A JP 2003353149 A JP2003353149 A JP 2003353149A JP 2004048067 A JP2004048067 A JP 2004048067A
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Japan
Prior art keywords
light emitting
electrode
side electrode
gan
conductivity type
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JP2003353149A
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Japanese (ja)
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JP2004048067A5 (enExample
Inventor
Kunio Takeuchi
竹内　邦生
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication of JP2004048067A5 publication Critical patent/JP2004048067A5/ja
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JP2003353149A 2003-10-14 2003-10-14 発光部品およびその製造方法 Pending JP2004048067A (ja)

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JP2003353149A JP2004048067A (ja) 2003-10-14 2003-10-14 発光部品およびその製造方法

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JP2003353149A JP2004048067A (ja) 2003-10-14 2003-10-14 発光部品およびその製造方法

Related Parent Applications (1)

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JP33108397A Division JP3505374B2 (ja) 1997-11-14 1997-11-14 発光部品

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JP2004048067A true JP2004048067A (ja) 2004-02-12
JP2004048067A5 JP2004048067A5 (enExample) 2005-06-09

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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100628125B1 (ko) 2004-09-02 2006-09-26 엘지전자 주식회사 Ｌｅｄ를 이용한 조명장치와 이를 이용한 투사 표시장치
KR100644215B1 (ko) 2005-11-25 2006-11-10 서울옵토디바이스주식회사 발광소자와 그 제조방법
KR100652864B1 (ko) 2005-12-16 2006-12-04 서울옵토디바이스주식회사 개선된 투명전극 구조체를 갖는 교류용 발광 다이오드
KR100715456B1 (ko) 2005-11-01 2007-05-07 서울옵토디바이스주식회사 다수의 셀이 결합된 발광 소자의 제조 방법
KR100757800B1 (ko) 2006-06-30 2007-09-11 서울옵토디바이스주식회사 절연보호막을 갖는 교류용 발광 다이오드 및 그것을제조하는 방법
KR100758541B1 (ko) 2005-08-22 2007-09-13 서울옵토디바이스주식회사 행렬로 배치된 발광셀들을 갖는 발광 다이오드 및 그제조방법
JP2007294981A (ja) * 2006-04-21 2007-11-08 Philips Lumileds Lightng Co Llc 集積電子構成要素を有する半導体発光装置
KR100966372B1 (ko) 2007-11-23 2010-06-28 삼성엘이디 주식회사 모놀리식 발광다이오드 어레이 및 그 제조방법
JP2011187998A (ja) * 2006-01-09 2011-09-22 Seoul Opto Devices Co Ltd 発光ダイオード
KR101077862B1 (ko) 2010-07-30 2011-10-28 우리엘에스티 주식회사 발광다이오드의 코팅 방법
KR101077861B1 (ko) 2010-07-30 2011-10-28 우리엘에스티 주식회사 발광다이오드의 코팅 방법
JP2012503861A (ja) * 2008-09-24 2012-02-09 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 複合基板上に成長された半導体発光デバイス
KR101135093B1 (ko) 2011-02-22 2012-04-16 서울대학교산학협력단 발광 다이오드의 균일 코팅 방법
US8669126B2 (en) 2012-03-30 2014-03-11 Snu R&Db Foundation Uniform coating method for light emitting diode
KR101781227B1 (ko) 2011-09-21 2017-09-25 엘지이노텍 주식회사 발광소자, 발광소자 패키지, 라이트 유닛

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136085A (enExample) * 1974-09-24 1976-03-26 Mitsubishi Electric Corp
JPH04167569A (ja) * 1990-10-31 1992-06-15 Mitsubishi Kasei Polytec Co 化合物半導体発光素子の保護膜形成方法及び保護膜付化合物半導体発光素子
JPH07288340A (ja) * 1994-04-19 1995-10-31 Mitsubishi Cable Ind Ltd 発光素子およびその製造方法
JPH0927639A (ja) * 1995-07-12 1997-01-28 Toshiba Corp 半導体装置
JPH09283800A (ja) * 1996-04-16 1997-10-31 Nippon Sheet Glass Co Ltd 保護膜の形成方法および発光素子の製造方法
JPH10107316A (ja) * 1996-10-01 1998-04-24 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136085A (enExample) * 1974-09-24 1976-03-26 Mitsubishi Electric Corp
JPH04167569A (ja) * 1990-10-31 1992-06-15 Mitsubishi Kasei Polytec Co 化合物半導体発光素子の保護膜形成方法及び保護膜付化合物半導体発光素子
JPH07288340A (ja) * 1994-04-19 1995-10-31 Mitsubishi Cable Ind Ltd 発光素子およびその製造方法
JPH0927639A (ja) * 1995-07-12 1997-01-28 Toshiba Corp 半導体装置
JPH09283800A (ja) * 1996-04-16 1997-10-31 Nippon Sheet Glass Co Ltd 保護膜の形成方法および発光素子の製造方法
JPH10107316A (ja) * 1996-10-01 1998-04-24 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100628125B1 (ko) 2004-09-02 2006-09-26 엘지전자 주식회사 Ｌｅｄ를 이용한 조명장치와 이를 이용한 투사 표시장치
KR100758541B1 (ko) 2005-08-22 2007-09-13 서울옵토디바이스주식회사 행렬로 배치된 발광셀들을 갖는 발광 다이오드 및 그제조방법
KR100715456B1 (ko) 2005-11-01 2007-05-07 서울옵토디바이스주식회사 다수의 셀이 결합된 발광 소자의 제조 방법
KR100644215B1 (ko) 2005-11-25 2006-11-10 서울옵토디바이스주식회사 발광소자와 그 제조방법
KR100652864B1 (ko) 2005-12-16 2006-12-04 서울옵토디바이스주식회사 개선된 투명전극 구조체를 갖는 교류용 발광 다이오드
JP2011187998A (ja) * 2006-01-09 2011-09-22 Seoul Opto Devices Co Ltd 発光ダイオード
JP2007294981A (ja) * 2006-04-21 2007-11-08 Philips Lumileds Lightng Co Llc 集積電子構成要素を有する半導体発光装置
KR100757800B1 (ko) 2006-06-30 2007-09-11 서울옵토디바이스주식회사 절연보호막을 갖는 교류용 발광 다이오드 및 그것을제조하는 방법
KR100966372B1 (ko) 2007-11-23 2010-06-28 삼성엘이디 주식회사 모놀리식 발광다이오드 어레이 및 그 제조방법
JP2012503861A (ja) * 2008-09-24 2012-02-09 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 複合基板上に成長された半導体発光デバイス
US9117944B2 (en) 2008-09-24 2015-08-25 Koninklijke Philips N.V. Semiconductor light emitting devices grown on composite substrates
KR101077862B1 (ko) 2010-07-30 2011-10-28 우리엘에스티 주식회사 발광다이오드의 코팅 방법
KR101077861B1 (ko) 2010-07-30 2011-10-28 우리엘에스티 주식회사 발광다이오드의 코팅 방법
KR101135093B1 (ko) 2011-02-22 2012-04-16 서울대학교산학협력단 발광 다이오드의 균일 코팅 방법
KR101781227B1 (ko) 2011-09-21 2017-09-25 엘지이노텍 주식회사 발광소자, 발광소자 패키지, 라이트 유닛
US8669126B2 (en) 2012-03-30 2014-03-11 Snu R&Db Foundation Uniform coating method for light emitting diode

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