JP2004040064A - 不揮発性メモリとその製造方法 - Google Patents

不揮発性メモリとその製造方法 Download PDF

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Publication number
JP2004040064A
JP2004040064A JP2002226715A JP2002226715A JP2004040064A JP 2004040064 A JP2004040064 A JP 2004040064A JP 2002226715 A JP2002226715 A JP 2002226715A JP 2002226715 A JP2002226715 A JP 2002226715A JP 2004040064 A JP2004040064 A JP 2004040064A
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insulating film
semiconductor region
film
gate
conductive gate
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Japanese (ja)
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JP2004040064A5 (https=
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Yutaka Hayashi
林　豊
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  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2002226715A 2002-07-01 2002-07-01 不揮発性メモリとその製造方法 Pending JP2004040064A (ja)

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JP2002226715A JP2004040064A (ja) 2002-07-01 2002-07-01 不揮発性メモリとその製造方法

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JP2002226715A JP2004040064A (ja) 2002-07-01 2002-07-01 不揮発性メモリとその製造方法

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JP2004040064A5 JP2004040064A5 (https=) 2005-10-20

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190932A (ja) * 2004-12-29 2006-07-20 Hynix Semiconductor Inc チャージトラップインシュレータメモリ装置
JP2006237423A (ja) * 2005-02-28 2006-09-07 Oki Electric Ind Co Ltd 半導体記憶装置および半導体記憶装置の製造方法
WO2006106667A1 (ja) * 2005-03-30 2006-10-12 Tokyo Electron Limited 絶縁膜の製造方法および半導体装置の製造方法
JP2006339599A (ja) * 2005-06-06 2006-12-14 Renesas Technology Corp 半導体装置およびその製造方法
JP2007500938A (ja) * 2003-07-31 2007-01-18 フリースケール セミコンダクター インコーポレイテッド 不揮発性メモリおよびその製造方法
JP2007294936A (ja) * 2006-03-31 2007-11-08 Semiconductor Energy Lab Co Ltd 不揮発性半導体記憶装置及びその作製方法
JP2008053266A (ja) * 2006-08-22 2008-03-06 Sony Corp 不揮発性半導体メモリデバイスおよびその製造方法
JPWO2006095890A1 (ja) * 2005-03-07 2008-08-21 日本電気株式会社 半導体装置およびその製造方法
JP2010153789A (ja) * 2008-11-20 2010-07-08 Hitachi Kokusai Electric Inc 不揮発性半導体記憶装置およびその製造方法
JP2010225684A (ja) * 2009-03-19 2010-10-07 Toshiba Corp 半導体記憶装置
KR101101030B1 (ko) 2011-09-21 2011-12-29 서승환 Ｌｅｄ 모듈의 전압 계측 방법 및 장치
US8310000B2 (en) 2006-03-31 2012-11-13 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111175A (en) * 1979-02-15 1980-08-27 Ibm Device for collecting charge
JPS6486562A (en) * 1987-07-31 1989-03-31 Agency Ind Science Techn Nonvolatile semiconductor memory
JPH02265279A (ja) * 1989-04-06 1990-10-30 Toshiba Corp 半導体装置の製造方法
JPH05145078A (ja) * 1991-11-22 1993-06-11 Kawasaki Steel Corp 半導体不揮発性記憶素子とその製造方法
JPH06296029A (ja) * 1993-04-08 1994-10-21 Citizen Watch Co Ltd 半導体不揮発性記憶素子とその製造方法
JPH07153858A (ja) * 1993-10-01 1995-06-16 Matsushita Electric Ind Co Ltd 半導体メモリ装置及びその製造方法
JPH09148543A (ja) * 1995-11-24 1997-06-06 Toshiba Corp 半導体装置の製造方法
JPH10321740A (ja) * 1997-03-19 1998-12-04 Citizen Watch Co Ltd 半導体不揮発性メモリトランジスタおよびその製造方法
JPH1140682A (ja) * 1997-07-18 1999-02-12 Sony Corp 不揮発性半導体記憶装置及びその製造方法
JP2000004014A (ja) * 1998-06-12 2000-01-07 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2001196464A (ja) * 2000-01-17 2001-07-19 Nec Corp 半導体装置とその製造方法
JP2002009179A (ja) * 2000-06-21 2002-01-11 Sony Corp 不揮発性半導体記憶装置およびその製造方法
JP2002064097A (ja) * 1999-06-30 2002-02-28 Toshiba Corp 半導体装置の製造方法
JP2003068897A (ja) * 2001-06-28 2003-03-07 Samsung Electronics Co Ltd 浮遊トラップ型不揮発性メモリ素子

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111175A (en) * 1979-02-15 1980-08-27 Ibm Device for collecting charge
JPS6486562A (en) * 1987-07-31 1989-03-31 Agency Ind Science Techn Nonvolatile semiconductor memory
JPH02265279A (ja) * 1989-04-06 1990-10-30 Toshiba Corp 半導体装置の製造方法
JPH05145078A (ja) * 1991-11-22 1993-06-11 Kawasaki Steel Corp 半導体不揮発性記憶素子とその製造方法
JPH06296029A (ja) * 1993-04-08 1994-10-21 Citizen Watch Co Ltd 半導体不揮発性記憶素子とその製造方法
JPH07153858A (ja) * 1993-10-01 1995-06-16 Matsushita Electric Ind Co Ltd 半導体メモリ装置及びその製造方法
JPH09148543A (ja) * 1995-11-24 1997-06-06 Toshiba Corp 半導体装置の製造方法
JPH10321740A (ja) * 1997-03-19 1998-12-04 Citizen Watch Co Ltd 半導体不揮発性メモリトランジスタおよびその製造方法
JPH1140682A (ja) * 1997-07-18 1999-02-12 Sony Corp 不揮発性半導体記憶装置及びその製造方法
JP2000004014A (ja) * 1998-06-12 2000-01-07 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2002064097A (ja) * 1999-06-30 2002-02-28 Toshiba Corp 半導体装置の製造方法
JP2001196464A (ja) * 2000-01-17 2001-07-19 Nec Corp 半導体装置とその製造方法
JP2002009179A (ja) * 2000-06-21 2002-01-11 Sony Corp 不揮発性半導体記憶装置およびその製造方法
JP2003068897A (ja) * 2001-06-28 2003-03-07 Samsung Electronics Co Ltd 浮遊トラップ型不揮発性メモリ素子

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007500938A (ja) * 2003-07-31 2007-01-18 フリースケール セミコンダクター インコーポレイテッド 不揮発性メモリおよびその製造方法
JP2006190932A (ja) * 2004-12-29 2006-07-20 Hynix Semiconductor Inc チャージトラップインシュレータメモリ装置
JP2006237423A (ja) * 2005-02-28 2006-09-07 Oki Electric Ind Co Ltd 半導体記憶装置および半導体記憶装置の製造方法
JPWO2006095890A1 (ja) * 2005-03-07 2008-08-21 日本電気株式会社 半導体装置およびその製造方法
WO2006106667A1 (ja) * 2005-03-30 2006-10-12 Tokyo Electron Limited 絶縁膜の製造方法および半導体装置の製造方法
JP2006339599A (ja) * 2005-06-06 2006-12-14 Renesas Technology Corp 半導体装置およびその製造方法
US8310000B2 (en) 2006-03-31 2012-11-13 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
JP2007294936A (ja) * 2006-03-31 2007-11-08 Semiconductor Energy Lab Co Ltd 不揮発性半導体記憶装置及びその作製方法
JP2008053266A (ja) * 2006-08-22 2008-03-06 Sony Corp 不揮発性半導体メモリデバイスおよびその製造方法
US8084315B2 (en) 2008-11-20 2011-12-27 Hitachi Kokusai Electric Inc. Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation
JP2010153789A (ja) * 2008-11-20 2010-07-08 Hitachi Kokusai Electric Inc 不揮発性半導体記憶装置およびその製造方法
JP2010225684A (ja) * 2009-03-19 2010-10-07 Toshiba Corp 半導体記憶装置
KR101101030B1 (ko) 2011-09-21 2011-12-29 서승환 Ｌｅｄ 모듈의 전압 계측 방법 및 장치

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