JP2004006703A - 半導体のアニールおよびドーピングのための処理方法ならびにその装置 - Google Patents

半導体のアニールおよびドーピングのための処理方法ならびにその装置 Download PDF

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Publication number
JP2004006703A
JP2004006703A JP2003065188A JP2003065188A JP2004006703A JP 2004006703 A JP2004006703 A JP 2004006703A JP 2003065188 A JP2003065188 A JP 2003065188A JP 2003065188 A JP2003065188 A JP 2003065188A JP 2004006703 A JP2004006703 A JP 2004006703A
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Japan
Prior art keywords
laser light
semiconductor layer
semiconductor
target material
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2003065188A
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English (en)
Japanese (ja)
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JP2004006703A5 (enExample
Inventor
Masayuki Jumonji
十文字　正之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced LCD Technologies Development Center Co Ltd
Original Assignee
Advanced LCD Technologies Development Center Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced LCD Technologies Development Center Co Ltd filed Critical Advanced LCD Technologies Development Center Co Ltd
Priority to JP2003065188A priority Critical patent/JP2004006703A/ja
Priority to US10/394,479 priority patent/US6911717B2/en
Publication of JP2004006703A publication Critical patent/JP2004006703A/ja
Priority to US11/058,344 priority patent/US7241702B2/en
Publication of JP2004006703A5 publication Critical patent/JP2004006703A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2003065188A 2002-03-26 2003-03-11 半導体のアニールおよびドーピングのための処理方法ならびにその装置 Abandoned JP2004006703A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003065188A JP2004006703A (ja) 2002-03-26 2003-03-11 半導体のアニールおよびドーピングのための処理方法ならびにその装置
US10/394,479 US6911717B2 (en) 2002-03-26 2003-03-21 Processing method and apparatus for annealing and doping semiconductor
US11/058,344 US7241702B2 (en) 2002-03-26 2005-02-14 Processing method for annealing and doping a semiconductor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002084822 2002-03-26
JP2003065188A JP2004006703A (ja) 2002-03-26 2003-03-11 半導体のアニールおよびドーピングのための処理方法ならびにその装置

Publications (2)

Publication Number Publication Date
JP2004006703A true JP2004006703A (ja) 2004-01-08
JP2004006703A5 JP2004006703A5 (enExample) 2005-09-22

Family

ID=30445960

Family Applications (1)

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JP2003065188A Abandoned JP2004006703A (ja) 2002-03-26 2003-03-11 半導体のアニールおよびドーピングのための処理方法ならびにその装置

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Country Link
US (2) US6911717B2 (enExample)
JP (1) JP2004006703A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160115686A (ko) * 2015-03-26 2016-10-06 한국전자통신연구원 기판 도핑 방법
WO2019123612A1 (ja) * 2017-12-21 2019-06-27 ギガフォトン株式会社 レーザ照射システム
WO2019123611A1 (ja) * 2017-12-21 2019-06-27 ギガフォトン株式会社 レーザ照射方法、及びレーザ照射システム

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004044709A1 (de) * 2004-09-15 2006-03-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur gleichzeitigen Rekristalisierung und Dotierung von Halbleiterschichten und nach diesem Verfahren hergestellte Halbleiterschichtsysteme
US7279387B2 (en) * 2005-02-25 2007-10-09 United Microelectronics Corp. Method for fabricating asymmetric semiconductor device
TWI450401B (zh) * 2007-08-28 2014-08-21 Mosel Vitelic Inc 太陽能電池及其製造方法
US7896381B2 (en) * 2008-03-20 2011-03-01 Trek Bicycle Corporation Bicycle wheel assembly
TWI509698B (zh) 2013-12-25 2015-11-21 Ind Tech Res Inst 用於退火裝置的樣品座與使用此樣品座的電流輔助退火裝置
US9659775B2 (en) 2015-02-25 2017-05-23 Fuji Electric Co., Ltd. Method for doping impurities, method for manufacturing semiconductor device
US9972492B2 (en) * 2015-03-26 2018-05-15 Electronics And Telecommunications Research Institute Method of doping substrate
US20190378690A1 (en) * 2018-06-08 2019-12-12 Electronics And Telecommunications Research Institute Ion implantation apparatus and ion implantation method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728770A (en) * 1987-04-27 1988-03-01 Questar Corporation Dual axis optical system
US5231047A (en) * 1991-12-19 1993-07-27 Energy Conversion Devices, Inc. High quality photovoltaic semiconductor material and laser ablation method of fabrication same
US5386798A (en) * 1993-10-06 1995-02-07 Martin Marietta Energy Systems, Inc. Method for continuous control of composition and doping of pulsed laser deposited films
JPH0851207A (ja) 1994-08-05 1996-02-20 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
JP3349965B2 (ja) * 1998-11-05 2002-11-25 松下電器産業株式会社 微粒子分級方法及び装置
US20020151115A1 (en) * 2000-09-05 2002-10-17 Sony Corporation Process for production of thin film, semiconductor thin film, semiconductor device, process for production of semiconductor thin film, and apparatus for production of semiconductor thin film
JP2002122881A (ja) 2000-10-13 2002-04-26 Nec Corp 液晶表示装置及びその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160115686A (ko) * 2015-03-26 2016-10-06 한국전자통신연구원 기판 도핑 방법
KR102521976B1 (ko) 2015-03-26 2023-04-17 한국전자통신연구원 기판 도핑 방법
WO2019123612A1 (ja) * 2017-12-21 2019-06-27 ギガフォトン株式会社 レーザ照射システム
WO2019123611A1 (ja) * 2017-12-21 2019-06-27 ギガフォトン株式会社 レーザ照射方法、及びレーザ照射システム
JPWO2019123612A1 (ja) * 2017-12-21 2020-12-10 ギガフォトン株式会社 レーザ照射システム
JPWO2019123611A1 (ja) * 2017-12-21 2021-01-21 ギガフォトン株式会社 レーザ照射方法、及びレーザ照射システム
JP7057922B2 (ja) 2017-12-21 2022-04-21 ギガフォトン株式会社 レーザ照射システム
JP7140338B2 (ja) 2017-12-21 2022-09-21 ギガフォトン株式会社 レーザ照射方法、及びレーザ照射システム
US11710660B2 (en) 2017-12-21 2023-07-25 Gigaphoton Inc. Laser irradiation method and laser irradiation system
US12072507B2 (en) 2017-12-21 2024-08-27 Gigaphoton Inc. Laser radiation system

Also Published As

Publication number Publication date
US6911717B2 (en) 2005-06-28
US20050159014A1 (en) 2005-07-21
US20040110335A1 (en) 2004-06-10
US7241702B2 (en) 2007-07-10

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