JP2003518768A5 - - Google Patents
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- Publication number
- JP2003518768A5 JP2003518768A5 JP2001548428A JP2001548428A JP2003518768A5 JP 2003518768 A5 JP2003518768 A5 JP 2003518768A5 JP 2001548428 A JP2001548428 A JP 2001548428A JP 2001548428 A JP2001548428 A JP 2001548428A JP 2003518768 A5 JP2003518768 A5 JP 2003518768A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/472,757 US6852636B1 (en) | 1999-12-27 | 1999-12-27 | Insitu post etch process to remove remaining photoresist and residual sidewall passivation |
| US09/472,757 | 1999-12-27 | ||
| PCT/US2000/035165 WO2001048808A1 (en) | 1999-12-27 | 2000-12-21 | An insitu post etch process to remove remaining photoresist and residual sidewall passivation |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011196141A Division JP2012023385A (ja) | 1999-12-27 | 2011-09-08 | 残存フォトレジスト及び残留側壁パッシベーションを除去する、その場でのポストエッチング工程 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003518768A JP2003518768A (ja) | 2003-06-10 |
| JP2003518768A5 true JP2003518768A5 (US06573293-20030603-C00009.png) | 2008-05-22 |
Family
ID=23876824
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001548428A Withdrawn JP2003518768A (ja) | 1999-12-27 | 2000-12-21 | 残存フォトレジスト及び残留側壁パッシベーションを除去する、その場でのポストエッチング工程 |
| JP2011196141A Pending JP2012023385A (ja) | 1999-12-27 | 2011-09-08 | 残存フォトレジスト及び残留側壁パッシベーションを除去する、その場でのポストエッチング工程 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011196141A Pending JP2012023385A (ja) | 1999-12-27 | 2011-09-08 | 残存フォトレジスト及び残留側壁パッシベーションを除去する、その場でのポストエッチング工程 |
Country Status (10)
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1320128B1 (en) * | 2001-12-17 | 2006-05-03 | AMI Semiconductor Belgium BVBA | Method for making interconnect structures |
| US6943039B2 (en) * | 2003-02-11 | 2005-09-13 | Applied Materials Inc. | Method of etching ferroelectric layers |
| CN100444025C (zh) * | 2004-07-12 | 2008-12-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 光刻胶修整方法 |
| US7597816B2 (en) * | 2004-09-03 | 2009-10-06 | Lam Research Corporation | Wafer bevel polymer removal |
| JP4518986B2 (ja) * | 2005-03-17 | 2010-08-04 | 東京エレクトロン株式会社 | 大気搬送室、被処理体の処理後搬送方法、プログラム及び記憶媒体 |
| US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
| US7479457B2 (en) * | 2005-09-08 | 2009-01-20 | Lam Research Corporation | Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof |
| US20070227555A1 (en) * | 2006-04-04 | 2007-10-04 | Johnson Michael R | Method to manipulate post metal etch/side wall residue |
| JP2014212310A (ja) * | 2013-04-02 | 2014-11-13 | 東京エレクトロン株式会社 | 半導体デバイスの製造方法及び製造装置 |
| JP6844083B2 (ja) * | 2015-05-27 | 2021-03-17 | サムコ株式会社 | アフターコロージョン抑制処理方法 |
| CN107464750B (zh) * | 2017-08-23 | 2019-12-13 | 成都海威华芯科技有限公司 | 一种去除光刻胶底膜的工艺方法 |
| US11749532B2 (en) | 2021-05-04 | 2023-09-05 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| KR20240086974A (ko) * | 2022-12-12 | 2024-06-19 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4804431A (en) | 1987-11-03 | 1989-02-14 | Aaron Ribner | Microwave plasma etching machine and method of etching |
| JP2831646B2 (ja) * | 1988-03-25 | 1998-12-02 | 株式会社東芝 | 半導体装置の製造方法 |
| US4985113A (en) | 1989-03-10 | 1991-01-15 | Hitachi, Ltd. | Sample treating method and apparatus |
| US5186718A (en) * | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
| JPH0341728A (ja) * | 1989-07-07 | 1991-02-22 | Fujitsu Ltd | 半導体装置の製造方法 |
| DE69033663T2 (de) | 1989-08-28 | 2001-06-21 | Hitachi, Ltd. | Verfahren zur Behandlung eines Aluminium enthaltenden Musters |
| US5198634A (en) | 1990-05-21 | 1993-03-30 | Mattson Brad S | Plasma contamination removal process |
| JP2998173B2 (ja) * | 1990-06-01 | 2000-01-11 | 松下電器産業株式会社 | Ａｌエッチング方法 |
| DE69132811T2 (de) | 1990-06-27 | 2002-04-04 | Fujitsu Ltd., Kawasaki | Verfahren zum herstellen eines integrierten halbleiterschaltkreises |
| US5174856A (en) | 1991-08-26 | 1992-12-29 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from previous metal etch |
| JPH05275325A (ja) * | 1992-03-26 | 1993-10-22 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5462892A (en) | 1992-06-22 | 1995-10-31 | Vlsi Technology, Inc. | Semiconductor processing method for preventing corrosion of metal film connections |
| US5931721A (en) | 1994-11-07 | 1999-08-03 | Sumitomo Heavy Industries, Ltd. | Aerosol surface processing |
| JPH08213366A (ja) * | 1995-02-07 | 1996-08-20 | Hitachi Ltd | パターン形成方法およびパターン形成装置、ならびに半導体集積回路装置の製造方法および半導体製造装置 |
| US5705443A (en) | 1995-05-30 | 1998-01-06 | Advanced Technology Materials, Inc. | Etching method for refractory materials |
| WO1997011482A2 (en) | 1995-09-05 | 1997-03-27 | Lsi Logic Corporation | Removal of halogens and photoresist from wafers |
| US5573961A (en) | 1995-11-09 | 1996-11-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of making a body contact for a MOSFET device fabricated in an SOI layer |
| US5780359A (en) * | 1995-12-11 | 1998-07-14 | Applied Materials, Inc. | Polymer removal from top surfaces and sidewalls of a semiconductor wafer |
| US5824604A (en) | 1996-01-23 | 1998-10-20 | Mattson Technology, Inc. | Hydrocarbon-enhanced dry stripping of photoresist |
| US5712207A (en) | 1996-02-29 | 1998-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Profile improvement of a metal interconnect structure on a tungsten plug |
| KR19990008362A (ko) | 1996-03-06 | 1999-01-25 | 얀 드'해머,헤르베르트 볼만 | 리프트-오프 이미징 프로파일을 얻기 위한 방법 |
| US5964949A (en) | 1996-03-06 | 1999-10-12 | Mattson Technology, Inc. | ICP reactor having a conically-shaped plasma-generating section |
| US5908319A (en) | 1996-04-24 | 1999-06-01 | Ulvac Technologies, Inc. | Cleaning and stripping of photoresist from surfaces of semiconductor wafers |
| US5882489A (en) | 1996-04-26 | 1999-03-16 | Ulvac Technologies, Inc. | Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers |
| US5776832A (en) | 1996-07-17 | 1998-07-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Anti-corrosion etch process for etching metal interconnections extending over and within contact openings |
| US5779929A (en) | 1996-10-07 | 1998-07-14 | Lucent Technologies Inc. | Thin film metallization for barium nanotitanate substrates |
| US5744395A (en) | 1996-10-16 | 1998-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low resistance, self-aligned, titanium silicide structures, using a single rapid thermal anneal procedure |
| US5795831A (en) | 1996-10-16 | 1998-08-18 | Ulvac Technologies, Inc. | Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers |
| US5899716A (en) | 1997-05-19 | 1999-05-04 | Vanguard International Semiconductor Corporation | Oxygen ion implantation procedure to increase the surface area of an STC structure |
| JPH10335313A (ja) * | 1997-06-03 | 1998-12-18 | Hitachi Ltd | プラズマエッチング方法 |
| JPH113881A (ja) * | 1997-06-11 | 1999-01-06 | Fujitsu Ltd | アッシング方法及び装置 |
| US5846884A (en) | 1997-06-20 | 1998-12-08 | Siemens Aktiengesellschaft | Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing |
| US5946589A (en) | 1997-10-09 | 1999-08-31 | Chartered Semiconductor Manufacturing, Ltd. | Elimination of void formation in aluminum based interconnect structures |
| US5849639A (en) | 1997-11-26 | 1998-12-15 | Lucent Technologies Inc. | Method for removing etching residues and contaminants |
-
1999
- 1999-12-27 US US09/472,757 patent/US6852636B1/en not_active Expired - Fee Related
-
2000
- 2000-12-19 TW TW089127266A patent/TW471060B/zh not_active IP Right Cessation
- 2000-12-21 AT AT00990333T patent/ATE431964T1/de not_active IP Right Cessation
- 2000-12-21 CN CNB008191689A patent/CN1210773C/zh not_active Expired - Fee Related
- 2000-12-21 JP JP2001548428A patent/JP2003518768A/ja not_active Withdrawn
- 2000-12-21 KR KR1020027008271A patent/KR100794538B1/ko not_active IP Right Cessation
- 2000-12-21 DE DE60042246T patent/DE60042246D1/de not_active Expired - Lifetime
- 2000-12-21 WO PCT/US2000/035165 patent/WO2001048808A1/en active Application Filing
- 2000-12-21 AU AU27373/01A patent/AU2737301A/en not_active Abandoned
- 2000-12-21 EP EP00990333A patent/EP1243023B1/en not_active Expired - Lifetime
-
2011
- 2011-09-08 JP JP2011196141A patent/JP2012023385A/ja active Pending
