JP2003514061A - 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用 - Google Patents

誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用

Info

Publication number
JP2003514061A
JP2003514061A JP2001535478A JP2001535478A JP2003514061A JP 2003514061 A JP2003514061 A JP 2003514061A JP 2001535478 A JP2001535478 A JP 2001535478A JP 2001535478 A JP2001535478 A JP 2001535478A JP 2003514061 A JP2003514061 A JP 2003514061A
Authority
JP
Japan
Prior art keywords
polishing composition
chemical mechanical
polishing
silicon
mechanical polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001535478A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003514061A5 (enExample
Inventor
エフ． ウォルターズ，アリシア
エル． ミュエラー，ブライアン
エー． ダークセン，ジェイムズ
エム． フィーニー，ポール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2003514061A publication Critical patent/JP2003514061A/ja
Publication of JP2003514061A5 publication Critical patent/JP2003514061A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Inorganic Insulating Materials (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
JP2001535478A 1999-11-04 2000-10-31 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用 Withdrawn JP2003514061A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/428,965 US6350393B2 (en) 1999-11-04 1999-11-04 Use of CsOH in a dielectric CMP slurry
US09/428,965 1999-11-04
PCT/US2000/041707 WO2001032793A2 (en) 1999-11-04 2000-10-31 Use of cesium hydroxide in a dielectric cmp slurry

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012096848A Division JP2012156550A (ja) 1999-11-04 2012-04-20 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用

Publications (2)

Publication Number Publication Date
JP2003514061A true JP2003514061A (ja) 2003-04-15
JP2003514061A5 JP2003514061A5 (enExample) 2011-10-27

Family

ID=23701170

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2001535478A Withdrawn JP2003514061A (ja) 1999-11-04 2000-10-31 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用
JP2012096848A Withdrawn JP2012156550A (ja) 1999-11-04 2012-04-20 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用
JP2015094245A Expired - Fee Related JP6030703B2 (ja) 1999-11-04 2015-05-01 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2012096848A Withdrawn JP2012156550A (ja) 1999-11-04 2012-04-20 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用
JP2015094245A Expired - Fee Related JP6030703B2 (ja) 1999-11-04 2015-05-01 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用

Country Status (11)

Country Link
US (1) US6350393B2 (enExample)
EP (1) EP1234010B1 (enExample)
JP (3) JP2003514061A (enExample)
KR (1) KR20020077343A (enExample)
CN (1) CN1220742C (enExample)
AT (1) ATE263224T1 (enExample)
AU (1) AU3639001A (enExample)
DE (1) DE60009546T2 (enExample)
HK (1) HK1048826A1 (enExample)
TW (1) TW554022B (enExample)
WO (1) WO2001032793A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006073156A1 (ja) * 2005-01-05 2006-07-13 Nitta Haas Incorporated 研磨用スラリー
JP2008517791A (ja) * 2004-10-28 2008-05-29 キャボット マイクロエレクトロニクス コーポレイション 界面活性剤を含むｃｍｐ組成物
JP2009545159A (ja) * 2006-07-24 2009-12-17 キャボット マイクロエレクトロニクス コーポレイション 除去速度の高い誘電体膜のためのｃｍｐ組成物
JP2010503232A (ja) * 2006-09-05 2010-01-28 キャボット マイクロエレクトロニクス コーポレイション 水に可溶性酸化剤を使用する炭化ケイ素の研磨方法

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10063491A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US7677956B2 (en) 2002-05-10 2010-03-16 Cabot Microelectronics Corporation Compositions and methods for dielectric CMP
KR100526092B1 (ko) * 2002-10-15 2005-11-08 주식회사 네패스 실리콘 웨이퍼용 에지연마 조성물
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
WO2004090937A2 (en) * 2003-04-10 2004-10-21 Technion Research & Development Foundation Ltd Copper cmp slurry composition
US7186653B2 (en) 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
US7351662B2 (en) * 2005-01-07 2008-04-01 Dupont Air Products Nanomaterials Llc Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
WO2007038399A2 (en) * 2005-09-26 2007-04-05 Cabot Microelectronics Corporation Metal cations for initiating chemical mechanical polishing
EP1960570A2 (en) 2005-11-28 2008-08-27 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
US7641735B2 (en) * 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
CN101454487B (zh) 2006-03-30 2013-01-23 晶体公司 氮化铝块状晶体的可控掺杂方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
WO2008048562A1 (en) * 2006-10-16 2008-04-24 Cabot Microelectronics Corporation Glass polishing compositions and methods
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN107059116B (zh) 2007-01-17 2019-12-31 晶体公司 引晶的氮化铝晶体生长中的缺陷减少
US9437430B2 (en) 2007-01-26 2016-09-06 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US7922926B2 (en) 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
CN103038400B (zh) 2010-06-30 2016-06-22 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
EP2768920A4 (en) * 2011-10-21 2015-06-03 Advanced Tech Materials AMIN FREE POST-KMP COMPOSITION AND METHOD OF USE THEREOF
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
CN105144345B (zh) 2013-03-15 2018-05-08 晶体公司 与赝配电子和光电器件的平面接触

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH026586A (ja) * 1988-06-27 1990-01-10 Mitsubishi Monsanto Chem Co ウェハーのファイン研磨用組成物
JPH02158684A (ja) * 1988-12-12 1990-06-19 Mitsubishi Monsanto Chem Co ウェハーのファイン研摩用組成物
JPH09316431A (ja) * 1996-05-27 1997-12-09 Showa Kiyabotsuto Super Metal Kk 研磨用スラリー
US5769689A (en) * 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4150171A (en) 1976-03-30 1979-04-17 Surface Technology, Inc. Electroless plating
US4440670A (en) 1982-09-30 1984-04-03 Exxon Research And Engineering Co. Method of synthesizing high surface area unagglomerated noble metal pyrochlore compounds
EP0322721B1 (en) * 1987-12-29 1993-10-06 E.I. Du Pont De Nemours And Company Fine polishing composition for wafers
US5352277A (en) 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US5129982A (en) 1991-03-15 1992-07-14 General Motors Corporation Selective electrochemical etching
US5525191A (en) * 1994-07-25 1996-06-11 Motorola, Inc. Process for polishing a semiconductor substrate
US5714418A (en) * 1995-11-08 1998-02-03 Intel Corporation Diffusion barrier for electrical interconnects in an integrated circuit
EP0779655A3 (en) * 1995-12-14 1997-07-16 International Business Machines Corporation A method of chemically-mechanically polishing an electronic component
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH026586A (ja) * 1988-06-27 1990-01-10 Mitsubishi Monsanto Chem Co ウェハーのファイン研磨用組成物
JPH02158684A (ja) * 1988-12-12 1990-06-19 Mitsubishi Monsanto Chem Co ウェハーのファイン研摩用組成物
US5769689A (en) * 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
JPH09316431A (ja) * 1996-05-27 1997-12-09 Showa Kiyabotsuto Super Metal Kk 研磨用スラリー

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008517791A (ja) * 2004-10-28 2008-05-29 キャボット マイクロエレクトロニクス コーポレイション 界面活性剤を含むｃｍｐ組成物
WO2006073156A1 (ja) * 2005-01-05 2006-07-13 Nitta Haas Incorporated 研磨用スラリー
US8062548B2 (en) 2005-01-05 2011-11-22 Nitta Haas Incorporated Polishing slurry
JP2009545159A (ja) * 2006-07-24 2009-12-17 キャボット マイクロエレクトロニクス コーポレイション 除去速度の高い誘電体膜のためのｃｍｐ組成物
JP2010503232A (ja) * 2006-09-05 2010-01-28 キャボット マイクロエレクトロニクス コーポレイション 水に可溶性酸化剤を使用する炭化ケイ素の研磨方法

Also Published As

Publication number Publication date
ATE263224T1 (de) 2004-04-15
CN1220742C (zh) 2005-09-28
JP6030703B2 (ja) 2016-11-24
JP2015147938A (ja) 2015-08-20
EP1234010A2 (en) 2002-08-28
WO2001032793A3 (en) 2001-08-02
EP1234010B1 (en) 2004-03-31
JP2012156550A (ja) 2012-08-16
DE60009546D1 (de) 2004-05-06
US20010051433A1 (en) 2001-12-13
WO2001032793A8 (en) 2001-10-04
CN1387556A (zh) 2002-12-25
DE60009546T2 (de) 2005-02-03
KR20020077343A (ko) 2002-10-11
AU3639001A (en) 2001-05-14
HK1048826A1 (zh) 2003-04-17
TW554022B (en) 2003-09-21
US6350393B2 (en) 2002-02-26
WO2001032793A2 (en) 2001-05-10

Similar Documents

Publication Publication Date Title
JP6030703B2 (ja) 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用
JP2003514061A5 (enExample)
KR100704690B1 (ko) 연마액 및 연마방법
EP0773269B1 (en) Polishing slurry
KR100640600B1 (ko) 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법
EP2321378B1 (en) Chemical-mechanical polishing compositions and methods of making and using the same
JP3207178B2 (ja) 高選択性を有するスラリ及び複合材料基板の化学機械研磨方法
WO2003009349A2 (en) Methods and compositions for chemical mechanical polishing substrates covered with at least two dielectric materials
JP2004031905A (ja) 化学機械的ポリシングスラリー及びこれを用いた化学機械的研磨方法
TWI629324B (zh) 研磨基板之方法
JP3668046B2 (ja) 研磨布及びこの研磨布を用いた半導体装置の製造方法
Stavreva et al. Chemical-mechanical polishing of copper for interconnect formation
JP2003100680A (ja) 固定研磨剤と研磨剤含有水性液体媒質とを用いる化学機械研磨方法
JP4202826B2 (ja) 有機膜の化学的機械的研磨方法および半導体装置の製造方法
US6358853B2 (en) Ceria based slurry for chemical-mechanical polishing
KR100614773B1 (ko) 화학 기계적 연마 방법
KR20220058414A (ko) 화학 기계적 연마 방법 및 이를 이용한 반도체 소자의 제조방법
KR101371853B1 (ko) 연마슬러리
KR100750191B1 (ko) 슬러리 조성물, 이를 이용한 화학 기계적 연마 방법 및상기 방법을 이용한 비 휘발성 메모리 소자의 제조 방법
US7214623B2 (en) Planarization system and method using a carbonate containing fluid
KR101252390B1 (ko) 폴리실리콘막 연마용 슬러리 조성물
JP3927270B2 (ja) 研磨剤、研磨方法および半導体装置の製造方法
JP3147072B2 (ja) 半導体装置の製造方法
US20080314872A1 (en) Chemical-Mechanical Polishing Compositions Containing Aspartame And Methods Of Making And Using The Same
US6616510B2 (en) Chemical mechanical polishing method for copper

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071022

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071022

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110308

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110607

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110614

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20110908

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20111220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120420

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20120508

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20120531

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20120601