HK1048826A1 - 介電質cmp漿液中csoh的應用 - Google Patents

介電質cmp漿液中csoh的應用 Download PDF

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Publication number
HK1048826A1
HK1048826A1 HK03100847.2A HK03100847A HK1048826A1 HK 1048826 A1 HK1048826 A1 HK 1048826A1 HK 03100847 A HK03100847 A HK 03100847A HK 1048826 A1 HK1048826 A1 HK 1048826A1
Authority
HK
Hong Kong
Prior art keywords
polishing composition
chemical
abrasive
silicon
polishing
Prior art date
Application number
HK03100847.2A
Other languages
English (en)
Chinese (zh)
Inventor
艾丽西亚‧F‧沃尔特斯
艾麗西亞‧F‧沃爾特斯
布赖恩‧L‧米勒
詹姆斯‧A‧德克森
布賴恩‧L‧米勒
保罗‧M‧菲尼
保羅‧M‧菲尼
Original Assignee
卡伯特微电子公司
卡伯特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡伯特微电子公司, 卡伯特微電子公司 filed Critical 卡伯特微电子公司
Publication of HK1048826A1 publication Critical patent/HK1048826A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Inorganic Insulating Materials (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
HK03100847.2A 1999-11-04 2000-10-31 介電質cmp漿液中csoh的應用 HK1048826A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/428,965 US6350393B2 (en) 1999-11-04 1999-11-04 Use of CsOH in a dielectric CMP slurry
US09/428,965 1999-11-04
PCT/US2000/041707 WO2001032793A2 (en) 1999-11-04 2000-10-31 Use of cesium hydroxide in a dielectric cmp slurry

Publications (1)

Publication Number Publication Date
HK1048826A1 true HK1048826A1 (zh) 2003-04-17

Family

ID=23701170

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03100847.2A HK1048826A1 (zh) 1999-11-04 2000-10-31 介電質cmp漿液中csoh的應用

Country Status (11)

Country Link
US (1) US6350393B2 (enExample)
EP (1) EP1234010B1 (enExample)
JP (3) JP2003514061A (enExample)
KR (1) KR20020077343A (enExample)
CN (1) CN1220742C (enExample)
AT (1) ATE263224T1 (enExample)
AU (1) AU3639001A (enExample)
DE (1) DE60009546T2 (enExample)
HK (1) HK1048826A1 (enExample)
TW (1) TW554022B (enExample)
WO (1) WO2001032793A2 (enExample)

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DE10063491A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US7677956B2 (en) 2002-05-10 2010-03-16 Cabot Microelectronics Corporation Compositions and methods for dielectric CMP
KR100526092B1 (ko) * 2002-10-15 2005-11-08 주식회사 네패스 실리콘 웨이퍼용 에지연마 조성물
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
WO2004090937A2 (en) * 2003-04-10 2004-10-21 Technion Research & Development Foundation Ltd Copper cmp slurry composition
US7186653B2 (en) 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
TWI403574B (zh) * 2005-01-05 2013-08-01 Nitta Haas Inc Grinding slurry
US7351662B2 (en) * 2005-01-07 2008-04-01 Dupont Air Products Nanomaterials Llc Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
WO2007038399A2 (en) * 2005-09-26 2007-04-05 Cabot Microelectronics Corporation Metal cations for initiating chemical mechanical polishing
EP1960570A2 (en) 2005-11-28 2008-08-27 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
US7641735B2 (en) * 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
CN101454487B (zh) 2006-03-30 2013-01-23 晶体公司 氮化铝块状晶体的可控掺杂方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
WO2008048562A1 (en) * 2006-10-16 2008-04-24 Cabot Microelectronics Corporation Glass polishing compositions and methods
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN107059116B (zh) 2007-01-17 2019-12-31 晶体公司 引晶的氮化铝晶体生长中的缺陷减少
US9437430B2 (en) 2007-01-26 2016-09-06 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US7922926B2 (en) 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
CN103038400B (zh) 2010-06-30 2016-06-22 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
EP2768920A4 (en) * 2011-10-21 2015-06-03 Advanced Tech Materials AMIN FREE POST-KMP COMPOSITION AND METHOD OF USE THEREOF
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
CN105144345B (zh) 2013-03-15 2018-05-08 晶体公司 与赝配电子和光电器件的平面接触

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US4150171A (en) 1976-03-30 1979-04-17 Surface Technology, Inc. Electroless plating
US4440670A (en) 1982-09-30 1984-04-03 Exxon Research And Engineering Co. Method of synthesizing high surface area unagglomerated noble metal pyrochlore compounds
EP0322721B1 (en) * 1987-12-29 1993-10-06 E.I. Du Pont De Nemours And Company Fine polishing composition for wafers
JP2625002B2 (ja) * 1988-06-27 1997-06-25 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研磨用組成物
US5352277A (en) 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
JP2714411B2 (ja) * 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
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US5714418A (en) * 1995-11-08 1998-02-03 Intel Corporation Diffusion barrier for electrical interconnects in an integrated circuit
EP0779655A3 (en) * 1995-12-14 1997-07-16 International Business Machines Corporation A method of chemically-mechanically polishing an electronic component
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US5769689A (en) * 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
JPH09316431A (ja) * 1996-05-27 1997-12-09 Showa Kiyabotsuto Super Metal Kk 研磨用スラリー

Also Published As

Publication number Publication date
JP2003514061A (ja) 2003-04-15
ATE263224T1 (de) 2004-04-15
CN1220742C (zh) 2005-09-28
JP6030703B2 (ja) 2016-11-24
JP2015147938A (ja) 2015-08-20
EP1234010A2 (en) 2002-08-28
WO2001032793A3 (en) 2001-08-02
EP1234010B1 (en) 2004-03-31
JP2012156550A (ja) 2012-08-16
DE60009546D1 (de) 2004-05-06
US20010051433A1 (en) 2001-12-13
WO2001032793A8 (en) 2001-10-04
CN1387556A (zh) 2002-12-25
DE60009546T2 (de) 2005-02-03
KR20020077343A (ko) 2002-10-11
AU3639001A (en) 2001-05-14
TW554022B (en) 2003-09-21
US6350393B2 (en) 2002-02-26
WO2001032793A2 (en) 2001-05-10

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