ATE263224T1 - Verwendung von cäsiumhydroxyd für dielektrische aufschlämmung - Google Patents
Verwendung von cäsiumhydroxyd für dielektrische aufschlämmungInfo
- Publication number
- ATE263224T1 ATE263224T1 AT00991904T AT00991904T ATE263224T1 AT E263224 T1 ATE263224 T1 AT E263224T1 AT 00991904 T AT00991904 T AT 00991904T AT 00991904 T AT00991904 T AT 00991904T AT E263224 T1 ATE263224 T1 AT E263224T1
- Authority
- AT
- Austria
- Prior art keywords
- cesium
- hydroxyde
- dielectric slurry
- cesium hydroxide
- polishing compositions
- Prior art date
Links
- 229910052792 caesium Inorganic materials 0.000 title 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 title 1
- 239000002002 slurry Substances 0.000 title 1
- 238000005498 polishing Methods 0.000 abstract 3
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 abstract 2
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/428,965 US6350393B2 (en) | 1999-11-04 | 1999-11-04 | Use of CsOH in a dielectric CMP slurry |
| PCT/US2000/041707 WO2001032793A2 (en) | 1999-11-04 | 2000-10-31 | Use of cesium hydroxide in a dielectric cmp slurry |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE263224T1 true ATE263224T1 (de) | 2004-04-15 |
Family
ID=23701170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT00991904T ATE263224T1 (de) | 1999-11-04 | 2000-10-31 | Verwendung von cäsiumhydroxyd für dielektrische aufschlämmung |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6350393B2 (enExample) |
| EP (1) | EP1234010B1 (enExample) |
| JP (3) | JP2003514061A (enExample) |
| KR (1) | KR20020077343A (enExample) |
| CN (1) | CN1220742C (enExample) |
| AT (1) | ATE263224T1 (enExample) |
| AU (1) | AU3639001A (enExample) |
| DE (1) | DE60009546T2 (enExample) |
| HK (1) | HK1048826A1 (enExample) |
| TW (1) | TW554022B (enExample) |
| WO (1) | WO2001032793A2 (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10063491A1 (de) * | 2000-12-20 | 2002-06-27 | Bayer Ag | Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten |
| US7638346B2 (en) | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
| US20060005763A1 (en) | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US7677956B2 (en) | 2002-05-10 | 2010-03-16 | Cabot Microelectronics Corporation | Compositions and methods for dielectric CMP |
| KR100526092B1 (ko) * | 2002-10-15 | 2005-11-08 | 주식회사 네패스 | 실리콘 웨이퍼용 에지연마 조성물 |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| WO2004090937A2 (en) * | 2003-04-10 | 2004-10-21 | Technion Research & Development Foundation Ltd | Copper cmp slurry composition |
| US7186653B2 (en) | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
| US20050279733A1 (en) * | 2004-06-18 | 2005-12-22 | Cabot Microelectronics Corporation | CMP composition for improved oxide removal rate |
| US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
| KR20070090265A (ko) * | 2005-01-05 | 2007-09-05 | 니타 하스 인코포레이티드 | 연마슬러리 |
| US7351662B2 (en) * | 2005-01-07 | 2008-04-01 | Dupont Air Products Nanomaterials Llc | Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization |
| US20060288929A1 (en) * | 2005-06-10 | 2006-12-28 | Crystal Is, Inc. | Polar surface preparation of nitride substrates |
| WO2007038399A2 (en) * | 2005-09-26 | 2007-04-05 | Cabot Microelectronics Corporation | Metal cations for initiating chemical mechanical polishing |
| JP2009517329A (ja) | 2005-11-28 | 2009-04-30 | クリスタル・イズ，インコーポレイテッド | 低欠陥の大きな窒化アルミニウム結晶及びそれを製造する方法 |
| EP1954857B1 (en) | 2005-12-02 | 2018-09-26 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| US8012257B2 (en) | 2006-03-30 | 2011-09-06 | Crystal Is, Inc. | Methods for controllable doping of aluminum nitride bulk crystals |
| US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| US20080020680A1 (en) * | 2006-07-24 | 2008-01-24 | Cabot Microelectronics Corporation | Rate-enhanced CMP compositions for dielectric films |
| US7678700B2 (en) * | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| WO2008048562A1 (en) * | 2006-10-16 | 2008-04-24 | Cabot Microelectronics Corporation | Glass polishing compositions and methods |
| US8323406B2 (en) | 2007-01-17 | 2012-12-04 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| CN101652832B (zh) | 2007-01-26 | 2011-06-22 | 晶体公司 | 厚的赝晶氮化物外延层 |
| US8088220B2 (en) * | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
| US7922926B2 (en) | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
| US8754021B2 (en) | 2009-02-27 | 2014-06-17 | Advanced Technology Materials, Inc. | Non-amine post-CMP composition and method of use |
| CN105951177B (zh) | 2010-06-30 | 2018-11-02 | 晶体公司 | 使用热梯度控制的大块氮化铝单晶的生长 |
| US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| WO2013058770A1 (en) * | 2011-10-21 | 2013-04-25 | Advanced Technology Materials, Inc. | Non-amine post-cmp composition and method of use |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| JP6275817B2 (ja) | 2013-03-15 | 2018-02-07 | クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. | 仮像電子及び光学電子装置に対する平面コンタクト |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4150171A (en) | 1976-03-30 | 1979-04-17 | Surface Technology, Inc. | Electroless plating |
| US4440670A (en) | 1982-09-30 | 1984-04-03 | Exxon Research And Engineering Co. | Method of synthesizing high surface area unagglomerated noble metal pyrochlore compounds |
| EP0322721B1 (en) * | 1987-12-29 | 1993-10-06 | E.I. Du Pont De Nemours And Company | Fine polishing composition for wafers |
| JP2625002B2 (ja) * | 1988-06-27 | 1997-06-25 | イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー | ウェハーのファイン研磨用組成物 |
| US5352277A (en) | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
| JP2714411B2 (ja) * | 1988-12-12 | 1998-02-16 | イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー | ウェハーのファイン研摩用組成物 |
| US5129982A (en) | 1991-03-15 | 1992-07-14 | General Motors Corporation | Selective electrochemical etching |
| US5525191A (en) * | 1994-07-25 | 1996-06-11 | Motorola, Inc. | Process for polishing a semiconductor substrate |
| US5714418A (en) * | 1995-11-08 | 1998-02-03 | Intel Corporation | Diffusion barrier for electrical interconnects in an integrated circuit |
| EP0779655A3 (en) * | 1995-12-14 | 1997-07-16 | International Business Machines Corporation | A method of chemically-mechanically polishing an electronic component |
| EP0786504A3 (en) * | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Polishing composition |
| US5769689A (en) * | 1996-02-28 | 1998-06-23 | Rodel, Inc. | Compositions and methods for polishing silica, silicates, and silicon nitride |
| JPH09316431A (ja) * | 1996-05-27 | 1997-12-09 | Showa Kiyabotsuto Super Metal Kk | 研磨用スラリー |
-
1999
- 1999-11-04 US US09/428,965 patent/US6350393B2/en not_active Expired - Lifetime
-
2000
- 2000-10-31 KR KR1020027005704A patent/KR20020077343A/ko not_active Withdrawn
- 2000-10-31 EP EP00991904A patent/EP1234010B1/en not_active Expired - Lifetime
- 2000-10-31 AT AT00991904T patent/ATE263224T1/de not_active IP Right Cessation
- 2000-10-31 AU AU36390/01A patent/AU3639001A/en not_active Abandoned
- 2000-10-31 HK HK03100847.2A patent/HK1048826A1/zh unknown
- 2000-10-31 CN CNB008151466A patent/CN1220742C/zh not_active Expired - Fee Related
- 2000-10-31 WO PCT/US2000/041707 patent/WO2001032793A2/en not_active Ceased
- 2000-10-31 DE DE60009546T patent/DE60009546T2/de not_active Expired - Lifetime
- 2000-10-31 JP JP2001535478A patent/JP2003514061A/ja not_active Withdrawn
- 2000-12-05 TW TW089123290A patent/TW554022B/zh not_active IP Right Cessation
-
2012
- 2012-04-20 JP JP2012096848A patent/JP2012156550A/ja not_active Withdrawn
-
2015
- 2015-05-01 JP JP2015094245A patent/JP6030703B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE60009546T2 (de) | 2005-02-03 |
| WO2001032793A8 (en) | 2001-10-04 |
| JP2012156550A (ja) | 2012-08-16 |
| KR20020077343A (ko) | 2002-10-11 |
| JP2015147938A (ja) | 2015-08-20 |
| CN1220742C (zh) | 2005-09-28 |
| TW554022B (en) | 2003-09-21 |
| CN1387556A (zh) | 2002-12-25 |
| WO2001032793A3 (en) | 2001-08-02 |
| WO2001032793A2 (en) | 2001-05-10 |
| JP6030703B2 (ja) | 2016-11-24 |
| US6350393B2 (en) | 2002-02-26 |
| US20010051433A1 (en) | 2001-12-13 |
| DE60009546D1 (de) | 2004-05-06 |
| EP1234010A2 (en) | 2002-08-28 |
| HK1048826A1 (zh) | 2003-04-17 |
| EP1234010B1 (en) | 2004-03-31 |
| AU3639001A (en) | 2001-05-14 |
| JP2003514061A (ja) | 2003-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |