JP2003511858A - 配線用の種層、並びに、それらの製造方法および製造装置 - Google Patents

配線用の種層、並びに、それらの製造方法および製造装置

Info

Publication number
JP2003511858A
JP2003511858A JP2001529014A JP2001529014A JP2003511858A JP 2003511858 A JP2003511858 A JP 2003511858A JP 2001529014 A JP2001529014 A JP 2001529014A JP 2001529014 A JP2001529014 A JP 2001529014A JP 2003511858 A JP2003511858 A JP 2003511858A
Authority
JP
Japan
Prior art keywords
seed layer
conformal
layer
film forming
seed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001529014A
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English (en)
Japanese (ja)
Other versions
JP2003511858A5 (https=
Inventor
コーエン，ユーリ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27021179&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2003511858(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from US09/410,898 external-priority patent/US6136707A/en
Application filed by Individual filed Critical Individual
Publication of JP2003511858A publication Critical patent/JP2003511858A/ja
Publication of JP2003511858A5 publication Critical patent/JP2003511858A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/0425—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers comprising multiple stacked seed or nucleation layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Magnetic Heads (AREA)
JP2001529014A 1999-10-02 2000-09-25 配線用の種層、並びに、それらの製造方法および製造装置 Pending JP2003511858A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/410,898 US6136707A (en) 1999-10-02 1999-10-02 Seed layers for interconnects and methods for fabricating such seed layers
US09/410,898 1999-10-02
US09/563,733 US6610151B1 (en) 1999-10-02 2000-05-03 Seed layers for interconnects and methods and apparatus for their fabrication
US09/563,733 2000-05-03
PCT/US2000/040983 WO2001026145A1 (en) 1999-10-02 2000-09-25 Seed layers for interconnects and methods and apparatus for their fabrication

Publications (2)

Publication Number Publication Date
JP2003511858A true JP2003511858A (ja) 2003-03-25
JP2003511858A5 JP2003511858A5 (https=) 2007-07-12

Family

ID=27021179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001529014A Pending JP2003511858A (ja) 1999-10-02 2000-09-25 配線用の種層、並びに、それらの製造方法および製造装置

Country Status (5)

Country Link
US (8) US6610151B1 (https=)
JP (1) JP2003511858A (https=)
KR (1) KR20020043604A (https=)
TW (1) TW504795B (https=)
WO (1) WO2001026145A1 (https=)

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JP2001217204A (ja) * 1999-12-22 2001-08-10 Hynix Semiconductor Inc 半導体素子の銅金属配線形成方法
WO2008010370A1 (fr) * 2006-07-20 2008-01-24 Tokyo Electron Limited Procédé de fabrication de dispositif semiconducteur, appareil de fabrication de dispositif semiconducteur, dispositif semiconducteur, programme informatique et support de stockage
JP2013524019A (ja) * 2010-04-06 2013-06-17 ティーイーエル ネックス，インコーポレイテッド ミクロスケール構造中でのシード層堆積

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