JP2003510464A - 回転磁石アレイおよびスパッタ・ソース - Google Patents
回転磁石アレイおよびスパッタ・ソースInfo
- Publication number
- JP2003510464A JP2003510464A JP2001527013A JP2001527013A JP2003510464A JP 2003510464 A JP2003510464 A JP 2003510464A JP 2001527013 A JP2001527013 A JP 2001527013A JP 2001527013 A JP2001527013 A JP 2001527013A JP 2003510464 A JP2003510464 A JP 2003510464A
- Authority
- JP
- Japan
- Prior art keywords
- magnet
- magnetic path
- sputtering
- plate
- magnet array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 claims abstract description 61
- 239000007789 gas Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000000151 deposition Methods 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 238000000576 coating method Methods 0.000 claims abstract description 30
- 230000008021 deposition Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 30
- 230000007797 corrosion Effects 0.000 claims description 27
- 238000005260 corrosion Methods 0.000 claims description 27
- 239000011248 coating agent Substances 0.000 claims description 26
- 238000005477 sputtering target Methods 0.000 claims description 25
- 239000000919 ceramic Substances 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 6
- 238000003491 array Methods 0.000 abstract description 5
- 150000002739 metals Chemical class 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 14
- 238000012545 processing Methods 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- 229910001172 neodymium magnet Inorganic materials 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000000110 cooling liquid Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 241000274529 Megaceryle alcyon Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QJVKUMXDEUEQLH-UHFFFAOYSA-N [B].[Fe].[Nd] Chemical compound [B].[Fe].[Nd] QJVKUMXDEUEQLH-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Treatment Devices (AREA)
- Telephone Function (AREA)
- Catching Or Destruction (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/406,853 | 1999-09-29 | ||
| US09/406,853 US6258217B1 (en) | 1999-09-29 | 1999-09-29 | Rotating magnet array and sputter source |
| PCT/US2000/026503 WO2001023634A1 (en) | 1999-09-29 | 2000-09-27 | Rotating magnet array and sputter source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003510464A true JP2003510464A (ja) | 2003-03-18 |
| JP2003510464A5 JP2003510464A5 (enExample) | 2006-12-28 |
Family
ID=23609684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001527013A Pending JP2003510464A (ja) | 1999-09-29 | 2000-09-27 | 回転磁石アレイおよびスパッタ・ソース |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6258217B1 (enExample) |
| EP (1) | EP1235945B1 (enExample) |
| JP (1) | JP2003510464A (enExample) |
| AT (1) | ATE413688T1 (enExample) |
| AU (1) | AU7720700A (enExample) |
| DE (1) | DE60040757D1 (enExample) |
| HK (1) | HK1049502A1 (enExample) |
| WO (1) | WO2001023634A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004346406A (ja) * | 2003-05-26 | 2004-12-09 | Anelva Corp | スパッタリング装置 |
| JP2008542535A (ja) * | 2005-06-04 | 2008-11-27 | アプライド マテリアルズ ゲーエムベーハー アンド コンパニー カーゲー | スパッタ用マグネトロン |
| JP2010257516A (ja) * | 2009-04-23 | 2010-11-11 | Showa Denko Kk | マグネトロンスパッタ装置、インライン式成膜装置、磁気記録媒体の製造方法、磁気記録再生装置 |
| JP2012012700A (ja) * | 2010-06-03 | 2012-01-19 | Canon Anelva Corp | 磁石ユニットおよびマグネトロンスパッタリング装置 |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6454911B1 (en) * | 2000-06-01 | 2002-09-24 | Honeywell International Inc. | Method and apparatus for determining the pass through flux of magnetic materials |
| US7041204B1 (en) | 2000-10-27 | 2006-05-09 | Honeywell International Inc. | Physical vapor deposition components and methods of formation |
| WO2002086186A1 (en) * | 2001-04-24 | 2002-10-31 | Tosoh Smd, Inc. | Target and method of optimizing target profile |
| SE521095C2 (sv) | 2001-06-08 | 2003-09-30 | Cardinal Cg Co | Förfarande för reaktiv sputtring |
| US6758950B2 (en) | 2002-01-14 | 2004-07-06 | Seagate Technology Llc | Controlled magnetron shape for uniformly sputtered thin film |
| US20040129559A1 (en) * | 2002-04-12 | 2004-07-08 | Misner Josh W. | Diffusion bonded assemblies and fabrication methods |
| US7041200B2 (en) * | 2002-04-19 | 2006-05-09 | Applied Materials, Inc. | Reducing particle generation during sputter deposition |
| US7101466B2 (en) * | 2003-09-19 | 2006-09-05 | Kdf Electronic + Vacuum Services Inc | Linear sweeping magnetron sputtering cathode and scanning in-line system for arc-free reactive deposition and high target utilization |
| US7182843B2 (en) * | 2003-11-05 | 2007-02-27 | Dexter Magnetic Technologies, Inc. | Rotating sputtering magnetron |
| WO2006085354A1 (ja) * | 2005-02-08 | 2006-08-17 | Tohoku Seiki Industries, Ltd. | スパッタリング装置 |
| US7585399B1 (en) * | 2005-03-31 | 2009-09-08 | Novellus Systems, Inc. | Rotating magnet arrays for magnetron sputtering apparatus |
| DE102005019100B4 (de) * | 2005-04-25 | 2009-02-12 | Steag Hamatech Ag | Magnetsystem für eine Zerstäubungskathode |
| US8435388B2 (en) | 2005-11-01 | 2013-05-07 | Cardinal Cg Company | Reactive sputter deposition processes and equipment |
| US9771647B1 (en) | 2008-12-08 | 2017-09-26 | Michael A. Scobey | Cathode assemblies and sputtering systems |
| US8137517B1 (en) | 2009-02-10 | 2012-03-20 | Wd Media, Inc. | Dual position DC magnetron assembly |
| US9380692B2 (en) * | 2009-08-31 | 2016-06-28 | Samsung Electronics Co., Ltd. | Apparatus and arrangements of magnetic field generators to facilitate physical vapor deposition to form semiconductor films |
| US20120024229A1 (en) * | 2010-08-02 | 2012-02-02 | Applied Materials, Inc. | Control of plasma profile using magnetic null arrangement by auxiliary magnets |
| WO2012035603A1 (ja) * | 2010-09-13 | 2012-03-22 | 株式会社シンクロン | 磁場発生装置、マグネトロンカソード及びスパッタ装置 |
| US8674327B1 (en) | 2012-05-10 | 2014-03-18 | WD Media, LLC | Systems and methods for uniformly implanting materials on substrates using directed magnetic fields |
| US20140124359A1 (en) * | 2012-11-02 | 2014-05-08 | Intermolecular, Inc. | New Magnet Design Which Improves Erosion Profile for PVD Systems |
| GB201815216D0 (en) * | 2018-09-18 | 2018-10-31 | Spts Technologies Ltd | Apparatus and a method of controlling thickness variation in a material layer formed using physical vapour deposition |
| CN112030118A (zh) * | 2020-07-31 | 2020-12-04 | 中国原子能科学研究院 | 一种氘化聚乙烯纳米线阵列靶的制备方法 |
| US11479847B2 (en) | 2020-10-14 | 2022-10-25 | Alluxa, Inc. | Sputtering system with a plurality of cathode assemblies |
| US12400830B2 (en) | 2023-08-07 | 2025-08-26 | Bühler AG | RF sputtering of multiple electrodes with optimized plasma coupling through the implementation of capacitive and inductive components |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3878085A (en) | 1973-07-05 | 1975-04-15 | Sloan Technology Corp | Cathode sputtering apparatus |
| US4166018A (en) | 1974-01-31 | 1979-08-28 | Airco, Inc. | Sputtering process and apparatus |
| US3976555A (en) | 1975-03-20 | 1976-08-24 | Coulter Information Systems, Inc. | Method and apparatus for supplying background gas in a sputtering chamber |
| US4422916A (en) | 1981-02-12 | 1983-12-27 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
| US4444643A (en) | 1982-09-03 | 1984-04-24 | Gartek Systems, Inc. | Planar magnetron sputtering device |
| CA1184880A (en) * | 1982-11-18 | 1985-04-02 | Kovilvila Ramachandran | Sputtering apparatus and method |
| US4581118A (en) | 1983-01-26 | 1986-04-08 | Materials Research Corporation | Shaped field magnetron electrode |
| JPS6260866A (ja) | 1985-08-02 | 1987-03-17 | Fujitsu Ltd | マグネトロンスパツタ装置 |
| JPS6247478A (ja) | 1985-08-26 | 1987-03-02 | バリアン・アソシエイツ・インコ−ポレイテツド | 磁場の円運動と放射状運動を組み合わせたプレ−ナ・マグネトロン・スパツタリング装置 |
| US4714536A (en) | 1985-08-26 | 1987-12-22 | Varian Associates, Inc. | Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields |
| JPH0240739B2 (ja) | 1986-03-11 | 1990-09-13 | Fujitsu Ltd | Supatsutasochi |
| DE3619194A1 (de) | 1986-06-06 | 1987-12-10 | Leybold Heraeus Gmbh & Co Kg | Magnetron-zerstaeubungskatode fuer vakuum-beschichtungsanlagen |
| JPS63149374A (ja) | 1986-12-12 | 1988-06-22 | Fujitsu Ltd | スパツタ装置 |
| JP2643149B2 (ja) | 1987-06-03 | 1997-08-20 | 株式会社ブリヂストン | 表面処理方法 |
| JP2627651B2 (ja) | 1988-10-17 | 1997-07-09 | アネルバ株式会社 | マグネトロンスパッタリング装置 |
| US5130005A (en) | 1990-10-31 | 1992-07-14 | Materials Research Corporation | Magnetron sputter coating method and apparatus with rotating magnet cathode |
| US4995958A (en) | 1989-05-22 | 1991-02-26 | Varian Associates, Inc. | Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile |
| JPH0310072A (ja) * | 1989-06-07 | 1991-01-17 | Fujitsu Ltd | マグネトロンスパッタリング装置 |
| DE3929695C2 (de) * | 1989-09-07 | 1996-12-19 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats |
| EP0439360A3 (en) | 1990-01-26 | 1992-01-15 | Varian Associates, Inc. | Rotating sputtering apparatus for selected erosion |
| US5252194A (en) | 1990-01-26 | 1993-10-12 | Varian Associates, Inc. | Rotating sputtering apparatus for selected erosion |
| US5635036A (en) | 1990-01-26 | 1997-06-03 | Varian Associates, Inc. | Collimated deposition apparatus and method |
| EP0439361B1 (en) | 1990-01-26 | 2003-06-11 | Varian Semiconductor Equipment Associates Inc. | Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile |
| EP0440377B1 (en) | 1990-01-29 | 1998-03-18 | Varian Associates, Inc. | Collimated deposition apparatus and method |
| KR950000011B1 (ko) | 1990-02-28 | 1995-01-07 | 니찌덴 아네루바 가부시끼가이샤 | 마그네트론 스패터링장치 및 박막형성방법 |
| US5320728A (en) | 1990-03-30 | 1994-06-14 | Applied Materials, Inc. | Planar magnetron sputtering source producing improved coating thickness uniformity, step coverage and step coverage uniformity |
| EP0555339B1 (en) | 1990-10-31 | 1997-12-29 | Materials Research Corporation | Magnetron sputter coating method and apparatus with rotating magnet cathode |
| DE4039101C2 (de) | 1990-12-07 | 1998-05-28 | Leybold Ag | Ortsfeste Magnetron-Zerstäubungskathode für Vakuumbeschichtungsanlagen |
| US5171415A (en) | 1990-12-21 | 1992-12-15 | Novellus Systems, Inc. | Cooling method and apparatus for magnetron sputtering |
| DE4106770C2 (de) * | 1991-03-04 | 1996-10-17 | Leybold Ag | Verrichtung zum reaktiven Beschichten eines Substrats |
| US5194131A (en) | 1991-08-16 | 1993-03-16 | Varian Associates, Inc. | Apparatus and method for multiple ring sputtering from a single target |
| DE4128340C2 (de) * | 1991-08-27 | 1999-09-23 | Leybold Ag | Zerstäubungskathodenanordnung nach dem Magnetron-Prinzip für die Beschichtung einer kreisringförmigen Beschichtungsfläche |
| US5188717A (en) | 1991-09-12 | 1993-02-23 | Novellus Systems, Inc. | Sweeping method and magnet track apparatus for magnetron sputtering |
| US5314597A (en) | 1992-03-20 | 1994-05-24 | Varian Associates, Inc. | Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile |
| US5248402A (en) | 1992-07-29 | 1993-09-28 | Cvc Products, Inc. | Apple-shaped magnetron for sputtering system |
| US5417833A (en) | 1993-04-14 | 1995-05-23 | Varian Associates, Inc. | Sputtering apparatus having a rotating magnet array and fixed electromagnets |
| WO1996004839A1 (en) | 1994-08-08 | 1996-02-22 | Computed Anatomy, Incorporated | Processing of keratoscopic images using local spatial phase |
| EP0801416A1 (en) | 1996-04-10 | 1997-10-15 | Applied Materials, Inc. | Plasma processing chamber with epicyclic magnet source assembly |
| US5855744A (en) | 1996-07-19 | 1999-01-05 | Applied Komatsu Technology, Inc. | Non-planar magnet tracking during magnetron sputtering |
| US5830327A (en) | 1996-10-02 | 1998-11-03 | Intevac, Inc. | Methods and apparatus for sputtering with rotating magnet sputter sources |
-
1999
- 1999-09-29 US US09/406,853 patent/US6258217B1/en not_active Expired - Lifetime
-
2000
- 2000-09-27 HK HK03101395.6A patent/HK1049502A1/zh unknown
- 2000-09-27 EP EP00966934A patent/EP1235945B1/en not_active Expired - Lifetime
- 2000-09-27 JP JP2001527013A patent/JP2003510464A/ja active Pending
- 2000-09-27 DE DE60040757T patent/DE60040757D1/de not_active Expired - Lifetime
- 2000-09-27 AU AU77207/00A patent/AU7720700A/en not_active Abandoned
- 2000-09-27 WO PCT/US2000/026503 patent/WO2001023634A1/en not_active Ceased
- 2000-09-27 AT AT00966934T patent/ATE413688T1/de not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004346406A (ja) * | 2003-05-26 | 2004-12-09 | Anelva Corp | スパッタリング装置 |
| JP2008542535A (ja) * | 2005-06-04 | 2008-11-27 | アプライド マテリアルズ ゲーエムベーハー アンド コンパニー カーゲー | スパッタ用マグネトロン |
| JP2010257516A (ja) * | 2009-04-23 | 2010-11-11 | Showa Denko Kk | マグネトロンスパッタ装置、インライン式成膜装置、磁気記録媒体の製造方法、磁気記録再生装置 |
| JP2012012700A (ja) * | 2010-06-03 | 2012-01-19 | Canon Anelva Corp | 磁石ユニットおよびマグネトロンスパッタリング装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6258217B1 (en) | 2001-07-10 |
| EP1235945A1 (en) | 2002-09-04 |
| AU7720700A (en) | 2001-04-30 |
| HK1049502A1 (zh) | 2003-05-16 |
| WO2001023634A1 (en) | 2001-04-05 |
| EP1235945A4 (en) | 2007-01-17 |
| DE60040757D1 (de) | 2008-12-18 |
| EP1235945B1 (en) | 2008-11-05 |
| ATE413688T1 (de) | 2008-11-15 |
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