AU7720700A - Rotating magnet array and sputter source - Google Patents

Rotating magnet array and sputter source

Info

Publication number
AU7720700A
AU7720700A AU77207/00A AU7720700A AU7720700A AU 7720700 A AU7720700 A AU 7720700A AU 77207/00 A AU77207/00 A AU 77207/00A AU 7720700 A AU7720700 A AU 7720700A AU 7720700 A AU7720700 A AU 7720700A
Authority
AU
Australia
Prior art keywords
magnetic path
magnets
magnet array
metal
lobes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU77207/00A
Other languages
English (en)
Inventor
Paul R. Fournier
David Johnson
Mark D. Kenney
Abdul Lateef
David G. Lishan
Shinzo Onishi
Edmond A. Richards
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Management USA Inc
Original Assignee
Unaxis USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis USA Inc filed Critical Unaxis USA Inc
Publication of AU7720700A publication Critical patent/AU7720700A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Treatment Devices (AREA)
  • Telephone Function (AREA)
  • Catching Or Destruction (AREA)
AU77207/00A 1999-09-29 2000-09-27 Rotating magnet array and sputter source Abandoned AU7720700A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/406,853 US6258217B1 (en) 1999-09-29 1999-09-29 Rotating magnet array and sputter source
US09406853 1999-09-29
PCT/US2000/026503 WO2001023634A1 (en) 1999-09-29 2000-09-27 Rotating magnet array and sputter source

Publications (1)

Publication Number Publication Date
AU7720700A true AU7720700A (en) 2001-04-30

Family

ID=23609684

Family Applications (1)

Application Number Title Priority Date Filing Date
AU77207/00A Abandoned AU7720700A (en) 1999-09-29 2000-09-27 Rotating magnet array and sputter source

Country Status (8)

Country Link
US (1) US6258217B1 (enExample)
EP (1) EP1235945B1 (enExample)
JP (1) JP2003510464A (enExample)
AT (1) ATE413688T1 (enExample)
AU (1) AU7720700A (enExample)
DE (1) DE60040757D1 (enExample)
HK (1) HK1049502A1 (enExample)
WO (1) WO2001023634A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6454911B1 (en) * 2000-06-01 2002-09-24 Honeywell International Inc. Method and apparatus for determining the pass through flux of magnetic materials
US7041204B1 (en) 2000-10-27 2006-05-09 Honeywell International Inc. Physical vapor deposition components and methods of formation
WO2002086186A1 (en) * 2001-04-24 2002-10-31 Tosoh Smd, Inc. Target and method of optimizing target profile
SE521095C2 (sv) 2001-06-08 2003-09-30 Cardinal Cg Co Förfarande för reaktiv sputtring
US6758950B2 (en) 2002-01-14 2004-07-06 Seagate Technology Llc Controlled magnetron shape for uniformly sputtered thin film
US20040129559A1 (en) * 2002-04-12 2004-07-08 Misner Josh W. Diffusion bonded assemblies and fabrication methods
US7041200B2 (en) * 2002-04-19 2006-05-09 Applied Materials, Inc. Reducing particle generation during sputter deposition
JP4493284B2 (ja) * 2003-05-26 2010-06-30 キヤノンアネルバ株式会社 スパッタリング装置
US7101466B2 (en) * 2003-09-19 2006-09-05 Kdf Electronic + Vacuum Services Inc Linear sweeping magnetron sputtering cathode and scanning in-line system for arc-free reactive deposition and high target utilization
US7182843B2 (en) * 2003-11-05 2007-02-27 Dexter Magnetic Technologies, Inc. Rotating sputtering magnetron
WO2006085354A1 (ja) * 2005-02-08 2006-08-17 Tohoku Seiki Industries, Ltd. スパッタリング装置
US7585399B1 (en) * 2005-03-31 2009-09-08 Novellus Systems, Inc. Rotating magnet arrays for magnetron sputtering apparatus
DE102005019100B4 (de) * 2005-04-25 2009-02-12 Steag Hamatech Ag Magnetsystem für eine Zerstäubungskathode
US20080190765A1 (en) * 2005-06-04 2008-08-14 Applied Materials Gmbh & Co.Kg Sputtering Magnetron
US8435388B2 (en) 2005-11-01 2013-05-07 Cardinal Cg Company Reactive sputter deposition processes and equipment
US9771647B1 (en) 2008-12-08 2017-09-26 Michael A. Scobey Cathode assemblies and sputtering systems
US8137517B1 (en) 2009-02-10 2012-03-20 Wd Media, Inc. Dual position DC magnetron assembly
JP5328462B2 (ja) * 2009-04-23 2013-10-30 昭和電工株式会社 マグネトロンスパッタ装置、インライン式成膜装置、磁気記録媒体の製造方法
US9380692B2 (en) * 2009-08-31 2016-06-28 Samsung Electronics Co., Ltd. Apparatus and arrangements of magnetic field generators to facilitate physical vapor deposition to form semiconductor films
JP5730077B2 (ja) * 2010-06-03 2015-06-03 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
US20120024229A1 (en) * 2010-08-02 2012-02-02 Applied Materials, Inc. Control of plasma profile using magnetic null arrangement by auxiliary magnets
WO2012035603A1 (ja) * 2010-09-13 2012-03-22 株式会社シンクロン 磁場発生装置、マグネトロンカソード及びスパッタ装置
US8674327B1 (en) 2012-05-10 2014-03-18 WD Media, LLC Systems and methods for uniformly implanting materials on substrates using directed magnetic fields
US20140124359A1 (en) * 2012-11-02 2014-05-08 Intermolecular, Inc. New Magnet Design Which Improves Erosion Profile for PVD Systems
GB201815216D0 (en) * 2018-09-18 2018-10-31 Spts Technologies Ltd Apparatus and a method of controlling thickness variation in a material layer formed using physical vapour deposition
CN112030118A (zh) * 2020-07-31 2020-12-04 中国原子能科学研究院 一种氘化聚乙烯纳米线阵列靶的制备方法
US11479847B2 (en) 2020-10-14 2022-10-25 Alluxa, Inc. Sputtering system with a plurality of cathode assemblies
US12400830B2 (en) 2023-08-07 2025-08-26 Bühler AG RF sputtering of multiple electrodes with optimized plasma coupling through the implementation of capacitive and inductive components

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878085A (en) 1973-07-05 1975-04-15 Sloan Technology Corp Cathode sputtering apparatus
US4166018A (en) 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
US3976555A (en) 1975-03-20 1976-08-24 Coulter Information Systems, Inc. Method and apparatus for supplying background gas in a sputtering chamber
US4422916A (en) 1981-02-12 1983-12-27 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4444643A (en) 1982-09-03 1984-04-24 Gartek Systems, Inc. Planar magnetron sputtering device
CA1184880A (en) * 1982-11-18 1985-04-02 Kovilvila Ramachandran Sputtering apparatus and method
US4581118A (en) 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
JPS6260866A (ja) 1985-08-02 1987-03-17 Fujitsu Ltd マグネトロンスパツタ装置
JPS6247478A (ja) 1985-08-26 1987-03-02 バリアン・アソシエイツ・インコ−ポレイテツド 磁場の円運動と放射状運動を組み合わせたプレ−ナ・マグネトロン・スパツタリング装置
US4714536A (en) 1985-08-26 1987-12-22 Varian Associates, Inc. Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
JPH0240739B2 (ja) 1986-03-11 1990-09-13 Fujitsu Ltd Supatsutasochi
DE3619194A1 (de) 1986-06-06 1987-12-10 Leybold Heraeus Gmbh & Co Kg Magnetron-zerstaeubungskatode fuer vakuum-beschichtungsanlagen
JPS63149374A (ja) 1986-12-12 1988-06-22 Fujitsu Ltd スパツタ装置
JP2643149B2 (ja) 1987-06-03 1997-08-20 株式会社ブリヂストン 表面処理方法
JP2627651B2 (ja) 1988-10-17 1997-07-09 アネルバ株式会社 マグネトロンスパッタリング装置
US5130005A (en) 1990-10-31 1992-07-14 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
US4995958A (en) 1989-05-22 1991-02-26 Varian Associates, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
JPH0310072A (ja) * 1989-06-07 1991-01-17 Fujitsu Ltd マグネトロンスパッタリング装置
DE3929695C2 (de) * 1989-09-07 1996-12-19 Leybold Ag Vorrichtung zum Beschichten eines Substrats
EP0439360A3 (en) 1990-01-26 1992-01-15 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5252194A (en) 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5635036A (en) 1990-01-26 1997-06-03 Varian Associates, Inc. Collimated deposition apparatus and method
EP0439361B1 (en) 1990-01-26 2003-06-11 Varian Semiconductor Equipment Associates Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
EP0440377B1 (en) 1990-01-29 1998-03-18 Varian Associates, Inc. Collimated deposition apparatus and method
KR950000011B1 (ko) 1990-02-28 1995-01-07 니찌덴 아네루바 가부시끼가이샤 마그네트론 스패터링장치 및 박막형성방법
US5320728A (en) 1990-03-30 1994-06-14 Applied Materials, Inc. Planar magnetron sputtering source producing improved coating thickness uniformity, step coverage and step coverage uniformity
EP0555339B1 (en) 1990-10-31 1997-12-29 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
DE4039101C2 (de) 1990-12-07 1998-05-28 Leybold Ag Ortsfeste Magnetron-Zerstäubungskathode für Vakuumbeschichtungsanlagen
US5171415A (en) 1990-12-21 1992-12-15 Novellus Systems, Inc. Cooling method and apparatus for magnetron sputtering
DE4106770C2 (de) * 1991-03-04 1996-10-17 Leybold Ag Verrichtung zum reaktiven Beschichten eines Substrats
US5194131A (en) 1991-08-16 1993-03-16 Varian Associates, Inc. Apparatus and method for multiple ring sputtering from a single target
DE4128340C2 (de) * 1991-08-27 1999-09-23 Leybold Ag Zerstäubungskathodenanordnung nach dem Magnetron-Prinzip für die Beschichtung einer kreisringförmigen Beschichtungsfläche
US5188717A (en) 1991-09-12 1993-02-23 Novellus Systems, Inc. Sweeping method and magnet track apparatus for magnetron sputtering
US5314597A (en) 1992-03-20 1994-05-24 Varian Associates, Inc. Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile
US5248402A (en) 1992-07-29 1993-09-28 Cvc Products, Inc. Apple-shaped magnetron for sputtering system
US5417833A (en) 1993-04-14 1995-05-23 Varian Associates, Inc. Sputtering apparatus having a rotating magnet array and fixed electromagnets
WO1996004839A1 (en) 1994-08-08 1996-02-22 Computed Anatomy, Incorporated Processing of keratoscopic images using local spatial phase
EP0801416A1 (en) 1996-04-10 1997-10-15 Applied Materials, Inc. Plasma processing chamber with epicyclic magnet source assembly
US5855744A (en) 1996-07-19 1999-01-05 Applied Komatsu Technology, Inc. Non-planar magnet tracking during magnetron sputtering
US5830327A (en) 1996-10-02 1998-11-03 Intevac, Inc. Methods and apparatus for sputtering with rotating magnet sputter sources

Also Published As

Publication number Publication date
US6258217B1 (en) 2001-07-10
EP1235945A1 (en) 2002-09-04
HK1049502A1 (zh) 2003-05-16
WO2001023634A1 (en) 2001-04-05
EP1235945A4 (en) 2007-01-17
DE60040757D1 (de) 2008-12-18
EP1235945B1 (en) 2008-11-05
ATE413688T1 (de) 2008-11-15
JP2003510464A (ja) 2003-03-18

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase