HK1049502A1 - 旋轉磁鐵陣列和濺射源 - Google Patents

旋轉磁鐵陣列和濺射源 Download PDF

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Publication number
HK1049502A1
HK1049502A1 HK03101395.6A HK03101395A HK1049502A1 HK 1049502 A1 HK1049502 A1 HK 1049502A1 HK 03101395 A HK03101395 A HK 03101395A HK 1049502 A1 HK1049502 A1 HK 1049502A1
Authority
HK
Hong Kong
Prior art keywords
magnetic path
magnets
magnet array
metal
lobes
Prior art date
Application number
HK03101395.6A
Other languages
English (en)
Chinese (zh)
Inventor
A. Richards Edmond
R. Fournier Paul
Johnson David
Lateef Abdul
G. Lishan David
Onishi Shinzo
D. Kenney Mark
Original Assignee
Oerlikon Usa Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Usa Inc. filed Critical Oerlikon Usa Inc.
Publication of HK1049502A1 publication Critical patent/HK1049502A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Treatment Devices (AREA)
  • Telephone Function (AREA)
  • Catching Or Destruction (AREA)
HK03101395.6A 1999-09-29 2000-09-27 旋轉磁鐵陣列和濺射源 HK1049502A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US406853 1999-09-29
US09/406,853 US6258217B1 (en) 1999-09-29 1999-09-29 Rotating magnet array and sputter source
PCT/US2000/026503 WO2001023634A1 (en) 1999-09-29 2000-09-27 Rotating magnet array and sputter source

Publications (1)

Publication Number Publication Date
HK1049502A1 true HK1049502A1 (zh) 2003-05-16

Family

ID=23609684

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03101395.6A HK1049502A1 (zh) 1999-09-29 2000-09-27 旋轉磁鐵陣列和濺射源

Country Status (8)

Country Link
US (1) US6258217B1 (enExample)
EP (1) EP1235945B1 (enExample)
JP (1) JP2003510464A (enExample)
AT (1) ATE413688T1 (enExample)
AU (1) AU7720700A (enExample)
DE (1) DE60040757D1 (enExample)
HK (1) HK1049502A1 (enExample)
WO (1) WO2001023634A1 (enExample)

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US7101466B2 (en) * 2003-09-19 2006-09-05 Kdf Electronic + Vacuum Services Inc Linear sweeping magnetron sputtering cathode and scanning in-line system for arc-free reactive deposition and high target utilization
US7182843B2 (en) * 2003-11-05 2007-02-27 Dexter Magnetic Technologies, Inc. Rotating sputtering magnetron
WO2006085354A1 (ja) * 2005-02-08 2006-08-17 Tohoku Seiki Industries, Ltd. スパッタリング装置
US7585399B1 (en) * 2005-03-31 2009-09-08 Novellus Systems, Inc. Rotating magnet arrays for magnetron sputtering apparatus
DE102005019100B4 (de) * 2005-04-25 2009-02-12 Steag Hamatech Ag Magnetsystem für eine Zerstäubungskathode
US20080190765A1 (en) * 2005-06-04 2008-08-14 Applied Materials Gmbh & Co.Kg Sputtering Magnetron
US8435388B2 (en) 2005-11-01 2013-05-07 Cardinal Cg Company Reactive sputter deposition processes and equipment
US9771647B1 (en) 2008-12-08 2017-09-26 Michael A. Scobey Cathode assemblies and sputtering systems
US8137517B1 (en) 2009-02-10 2012-03-20 Wd Media, Inc. Dual position DC magnetron assembly
JP5328462B2 (ja) * 2009-04-23 2013-10-30 昭和電工株式会社 マグネトロンスパッタ装置、インライン式成膜装置、磁気記録媒体の製造方法
US9380692B2 (en) * 2009-08-31 2016-06-28 Samsung Electronics Co., Ltd. Apparatus and arrangements of magnetic field generators to facilitate physical vapor deposition to form semiconductor films
JP5730077B2 (ja) * 2010-06-03 2015-06-03 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
US20120024229A1 (en) * 2010-08-02 2012-02-02 Applied Materials, Inc. Control of plasma profile using magnetic null arrangement by auxiliary magnets
WO2012035603A1 (ja) * 2010-09-13 2012-03-22 株式会社シンクロン 磁場発生装置、マグネトロンカソード及びスパッタ装置
US8674327B1 (en) 2012-05-10 2014-03-18 WD Media, LLC Systems and methods for uniformly implanting materials on substrates using directed magnetic fields
US20140124359A1 (en) * 2012-11-02 2014-05-08 Intermolecular, Inc. New Magnet Design Which Improves Erosion Profile for PVD Systems
GB201815216D0 (en) * 2018-09-18 2018-10-31 Spts Technologies Ltd Apparatus and a method of controlling thickness variation in a material layer formed using physical vapour deposition
CN112030118A (zh) * 2020-07-31 2020-12-04 中国原子能科学研究院 一种氘化聚乙烯纳米线阵列靶的制备方法
US11479847B2 (en) 2020-10-14 2022-10-25 Alluxa, Inc. Sputtering system with a plurality of cathode assemblies
US12400830B2 (en) 2023-08-07 2025-08-26 Bühler AG RF sputtering of multiple electrodes with optimized plasma coupling through the implementation of capacitive and inductive components

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Also Published As

Publication number Publication date
US6258217B1 (en) 2001-07-10
EP1235945A1 (en) 2002-09-04
AU7720700A (en) 2001-04-30
WO2001023634A1 (en) 2001-04-05
EP1235945A4 (en) 2007-01-17
DE60040757D1 (de) 2008-12-18
EP1235945B1 (en) 2008-11-05
ATE413688T1 (de) 2008-11-15
JP2003510464A (ja) 2003-03-18

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