JP2003298058A - 薄膜トランジスタおよびその製造方法 - Google Patents

薄膜トランジスタおよびその製造方法

Info

Publication number
JP2003298058A
JP2003298058A JP2002094606A JP2002094606A JP2003298058A JP 2003298058 A JP2003298058 A JP 2003298058A JP 2002094606 A JP2002094606 A JP 2002094606A JP 2002094606 A JP2002094606 A JP 2002094606A JP 2003298058 A JP2003298058 A JP 2003298058A
Authority
JP
Japan
Prior art keywords
semiconductor layer
region
gate electrode
layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2002094606A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003298058A5 (enExample
Inventor
Hiroyuki Ogawa
裕之 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced LCD Technologies Development Center Co Ltd
Original Assignee
Advanced LCD Technologies Development Center Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced LCD Technologies Development Center Co Ltd filed Critical Advanced LCD Technologies Development Center Co Ltd
Priority to JP2002094606A priority Critical patent/JP2003298058A/ja
Publication of JP2003298058A publication Critical patent/JP2003298058A/ja
Publication of JP2003298058A5 publication Critical patent/JP2003298058A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2002094606A 2002-03-29 2002-03-29 薄膜トランジスタおよびその製造方法 Abandoned JP2003298058A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002094606A JP2003298058A (ja) 2002-03-29 2002-03-29 薄膜トランジスタおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002094606A JP2003298058A (ja) 2002-03-29 2002-03-29 薄膜トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
JP2003298058A true JP2003298058A (ja) 2003-10-17
JP2003298058A5 JP2003298058A5 (enExample) 2005-09-15

Family

ID=29387006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002094606A Abandoned JP2003298058A (ja) 2002-03-29 2002-03-29 薄膜トランジスタおよびその製造方法

Country Status (1)

Country Link
JP (1) JP2003298058A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009177080A (ja) * 2008-01-28 2009-08-06 Toshiba Corp 半導体記憶装置
JP2010192477A (ja) * 2009-02-13 2010-09-02 Ricoh Co Ltd 縦型論理素子
WO2023197769A1 (zh) * 2022-04-15 2023-10-19 华为技术有限公司 一种cmos反相器、存储芯片、存储器及电子装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009177080A (ja) * 2008-01-28 2009-08-06 Toshiba Corp 半導体記憶装置
JP2010192477A (ja) * 2009-02-13 2010-09-02 Ricoh Co Ltd 縦型論理素子
WO2023197769A1 (zh) * 2022-04-15 2023-10-19 华为技术有限公司 一种cmos反相器、存储芯片、存储器及电子装置

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