JP2003298058A5 - - Google Patents

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Publication number
JP2003298058A5
JP2003298058A5 JP2002094606A JP2002094606A JP2003298058A5 JP 2003298058 A5 JP2003298058 A5 JP 2003298058A5 JP 2002094606 A JP2002094606 A JP 2002094606A JP 2002094606 A JP2002094606 A JP 2002094606A JP 2003298058 A5 JP2003298058 A5 JP 2003298058A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
gate electrode
thin film
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2002094606A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003298058A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002094606A priority Critical patent/JP2003298058A/ja
Priority claimed from JP2002094606A external-priority patent/JP2003298058A/ja
Publication of JP2003298058A publication Critical patent/JP2003298058A/ja
Publication of JP2003298058A5 publication Critical patent/JP2003298058A5/ja
Abandoned legal-status Critical Current

Links

JP2002094606A 2002-03-29 2002-03-29 薄膜トランジスタおよびその製造方法 Abandoned JP2003298058A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002094606A JP2003298058A (ja) 2002-03-29 2002-03-29 薄膜トランジスタおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002094606A JP2003298058A (ja) 2002-03-29 2002-03-29 薄膜トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
JP2003298058A JP2003298058A (ja) 2003-10-17
JP2003298058A5 true JP2003298058A5 (enExample) 2005-09-15

Family

ID=29387006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002094606A Abandoned JP2003298058A (ja) 2002-03-29 2002-03-29 薄膜トランジスタおよびその製造方法

Country Status (1)

Country Link
JP (1) JP2003298058A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5121475B2 (ja) * 2008-01-28 2013-01-16 株式会社東芝 半導体記憶装置
JP5456332B2 (ja) * 2009-02-13 2014-03-26 株式会社リコー 縦型論理素子
CN116978909A (zh) * 2022-04-15 2023-10-31 华为技术有限公司 一种cmos反相器、存储芯片、存储器及电子装置

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