JP2003264284A - 固体撮像素子及びその製造方法 - Google Patents

固体撮像素子及びその製造方法

Info

Publication number
JP2003264284A
JP2003264284A JP2002063611A JP2002063611A JP2003264284A JP 2003264284 A JP2003264284 A JP 2003264284A JP 2002063611 A JP2002063611 A JP 2002063611A JP 2002063611 A JP2002063611 A JP 2002063611A JP 2003264284 A JP2003264284 A JP 2003264284A
Authority
JP
Japan
Prior art keywords
insulating film
region
solid
power supply
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002063611A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003264284A5 (cg-RX-API-DMAC7.html
Inventor
Minoru Konishi
稔 小西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2002063611A priority Critical patent/JP2003264284A/ja
Priority to CNB031068219A priority patent/CN100342542C/zh
Priority to TW092104618A priority patent/TWI221029B/zh
Priority to US10/382,413 priority patent/US6936873B2/en
Priority to KR10-2003-0014278A priority patent/KR100500064B1/ko
Publication of JP2003264284A publication Critical patent/JP2003264284A/ja
Priority to US11/025,618 priority patent/US20050110052A1/en
Publication of JP2003264284A5 publication Critical patent/JP2003264284A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2002063611A 2002-03-08 2002-03-08 固体撮像素子及びその製造方法 Pending JP2003264284A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002063611A JP2003264284A (ja) 2002-03-08 2002-03-08 固体撮像素子及びその製造方法
CNB031068219A CN100342542C (zh) 2002-03-08 2003-03-04 固态摄像元件及其制造方法
TW092104618A TWI221029B (en) 2002-03-08 2003-03-05 Solid state image device and manufacturing method thereof
US10/382,413 US6936873B2 (en) 2002-03-08 2003-03-05 Solid state imaging device and method for manufacturing solid state imaging device
KR10-2003-0014278A KR100500064B1 (ko) 2002-03-08 2003-03-07 고체 촬상 소자 및 그 제조 방법
US11/025,618 US20050110052A1 (en) 2002-03-08 2004-12-28 Method for manufacturing a solid state imaging device and a method for manufacturing a lens

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002063611A JP2003264284A (ja) 2002-03-08 2002-03-08 固体撮像素子及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003264284A true JP2003264284A (ja) 2003-09-19
JP2003264284A5 JP2003264284A5 (cg-RX-API-DMAC7.html) 2005-09-08

Family

ID=27784930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002063611A Pending JP2003264284A (ja) 2002-03-08 2002-03-08 固体撮像素子及びその製造方法

Country Status (5)

Country Link
US (2) US6936873B2 (cg-RX-API-DMAC7.html)
JP (1) JP2003264284A (cg-RX-API-DMAC7.html)
KR (1) KR100500064B1 (cg-RX-API-DMAC7.html)
CN (1) CN100342542C (cg-RX-API-DMAC7.html)
TW (1) TWI221029B (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004093196A1 (ja) * 2003-04-16 2004-10-28 Sanyo Electric Co. Ltd. 固体撮像素子及びその製造方法
JP2010206009A (ja) * 2009-03-04 2010-09-16 Toshiba Corp 撮像装置及びその製造方法、並びに撮像方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005057137A (ja) * 2003-08-06 2005-03-03 Sanyo Electric Co Ltd 固体撮像装置の製造方法
KR100578644B1 (ko) * 2004-05-06 2006-05-11 매그나칩 반도체 유한회사 프리즘을 구비한 시모스 이미지센서 및 그 제조방법
JP2006344644A (ja) * 2005-06-07 2006-12-21 Matsushita Electric Ind Co Ltd 固体撮像装置およびカメラならびに固体撮像装置の製造方法
US20060289777A1 (en) * 2005-06-29 2006-12-28 Wen Li Detector with electrically isolated pixels
JP5061579B2 (ja) * 2006-11-02 2012-10-31 凸版印刷株式会社 固体撮像装置及びその製造方法
JP2009076746A (ja) * 2007-09-21 2009-04-09 Fujifilm Corp 固体撮像素子、撮像装置、及び固体撮像素子の製造方法
KR101106980B1 (ko) * 2009-03-19 2012-01-20 안동준 레일 바이크
KR20130140749A (ko) * 2010-11-10 2013-12-24 샤프 가부시키가이샤 표시 장치용 기판 및 그 제조방법, 표시장치
KR101038445B1 (ko) * 2011-01-24 2011-06-01 (주) 한국 레드벤쳐 레저용 레일 바이크
US10553479B2 (en) 2017-02-16 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with contact pad and fabrication method therefore

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637297A (ja) * 1992-07-16 1994-02-10 Nec Corp 固体撮像装置およびその駆動方法
JPH0763904A (ja) * 1993-08-25 1995-03-10 Asahi Glass Co Ltd 複合球面マイクロレンズアレイ及びその製造方法
JPH07248403A (ja) * 1994-03-11 1995-09-26 Ricoh Opt Ind Co Ltd 光学デバイス・光学デバイス製造方法
JP2000124435A (ja) * 1998-10-19 2000-04-28 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2002006113A (ja) * 2000-06-27 2002-01-09 Seiko Epson Corp マイクロレンズ用基板の製造方法、マイクロレンズ用基板、マイクロレンズ基板、電気光学装置、液晶パネル用対向基板、液晶パネル、および投射型表示装置
JP2003249634A (ja) * 2002-02-25 2003-09-05 Sony Corp 固体撮像素子およびその製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
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JPH05134111A (ja) * 1991-11-15 1993-05-28 Sharp Corp 固体撮像装置
JPH06232379A (ja) * 1993-02-01 1994-08-19 Sharp Corp 固体撮像素子
JPH06326284A (ja) * 1993-05-12 1994-11-25 Matsushita Electron Corp カラー固体撮像装置
JP2950714B2 (ja) * 1993-09-28 1999-09-20 シャープ株式会社 固体撮像装置およびその製造方法
JPH07106538A (ja) * 1993-09-30 1995-04-21 Olympus Optical Co Ltd 固体撮像装置の製造方法
JPH0927608A (ja) * 1995-05-11 1997-01-28 Sony Corp 固体撮像装置とその製造方法
JP3405620B2 (ja) * 1995-05-22 2003-05-12 松下電器産業株式会社 固体撮像装置
JPH0964325A (ja) * 1995-08-23 1997-03-07 Sony Corp 固体撮像素子とその製造方法
JPH10270672A (ja) * 1997-03-25 1998-10-09 Sony Corp 固体撮像素子
JP3447510B2 (ja) * 1997-04-09 2003-09-16 Ｎｅｃエレクトロニクス株式会社 固体撮像素子、その製造方法及び固体撮像装置
JP2000091548A (ja) * 1998-09-08 2000-03-31 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2000196060A (ja) * 1998-12-24 2000-07-14 Nec Corp 固体撮像装置およびその製造方法
JP2000206310A (ja) * 1999-01-19 2000-07-28 Matsushita Electric Ind Co Ltd レンズアレイ
US6583438B1 (en) * 1999-04-12 2003-06-24 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
JP3467434B2 (ja) * 1999-07-28 2003-11-17 Ｎｅｃエレクトロニクス株式会社 固体撮像素子およびその製造方法
JP4318007B2 (ja) * 1999-10-07 2009-08-19 富士フイルム株式会社 固体撮像素子
US6171885B1 (en) * 1999-10-12 2001-01-09 Taiwan Semiconductor Manufacturing Company High efficiency color filter process for semiconductor array imaging devices
US6504194B1 (en) * 1999-12-01 2003-01-07 Innotech Corporation Solid state imaging device, method of manufacturing the same, and solid state imaging system
US6221687B1 (en) * 1999-12-23 2001-04-24 Tower Semiconductor Ltd. Color image sensor with embedded microlens array
JP2001189443A (ja) * 1999-12-28 2001-07-10 Sony Corp 固体撮像素子及びその製造方法
JP3840058B2 (ja) * 2000-04-07 2006-11-01 キヤノン株式会社 マイクロレンズ、固体撮像装置及びそれらの製造方法
US6448596B1 (en) * 2000-08-15 2002-09-10 Innotech Corporation Solid-state imaging device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637297A (ja) * 1992-07-16 1994-02-10 Nec Corp 固体撮像装置およびその駆動方法
JPH0763904A (ja) * 1993-08-25 1995-03-10 Asahi Glass Co Ltd 複合球面マイクロレンズアレイ及びその製造方法
JPH07248403A (ja) * 1994-03-11 1995-09-26 Ricoh Opt Ind Co Ltd 光学デバイス・光学デバイス製造方法
JP2000124435A (ja) * 1998-10-19 2000-04-28 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2002006113A (ja) * 2000-06-27 2002-01-09 Seiko Epson Corp マイクロレンズ用基板の製造方法、マイクロレンズ用基板、マイクロレンズ基板、電気光学装置、液晶パネル用対向基板、液晶パネル、および投射型表示装置
JP2003249634A (ja) * 2002-02-25 2003-09-05 Sony Corp 固体撮像素子およびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004093196A1 (ja) * 2003-04-16 2004-10-28 Sanyo Electric Co. Ltd. 固体撮像素子及びその製造方法
US7459327B2 (en) 2003-04-16 2008-12-02 Sanyo Electric Co., Ltd. Method for manufacturing micro lenses including underlayer film and lens film etching steps
JP2010206009A (ja) * 2009-03-04 2010-09-16 Toshiba Corp 撮像装置及びその製造方法、並びに撮像方法

Also Published As

Publication number Publication date
KR100500064B1 (ko) 2005-07-12
KR20030082360A (ko) 2003-10-22
US20050110052A1 (en) 2005-05-26
TW200304215A (en) 2003-09-16
TWI221029B (en) 2004-09-11
US6936873B2 (en) 2005-08-30
CN1444287A (zh) 2003-09-24
US20030168678A1 (en) 2003-09-11
CN100342542C (zh) 2007-10-10

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