JP4448087B2 - Cmosイメージセンサーとその製造方法 - Google Patents
Cmosイメージセンサーとその製造方法 Download PDFInfo
- Publication number
- JP4448087B2 JP4448087B2 JP2005379396A JP2005379396A JP4448087B2 JP 4448087 B2 JP4448087 B2 JP 4448087B2 JP 2005379396 A JP2005379396 A JP 2005379396A JP 2005379396 A JP2005379396 A JP 2005379396A JP 4448087 B2 JP4448087 B2 JP 4448087B2
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- Prior art keywords
- interlayer insulating
- film
- forming
- insulating film
- image sensor
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- Expired - Fee Related
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000011229 interlayer Substances 0.000 claims description 58
- 239000010410 layer Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 32
- 230000001681 protective effect Effects 0.000 claims description 13
- 238000001039 wet etching Methods 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 100
- 238000005530 etching Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
図示したように、半導体基板10上に複数のエピタキシャル層(図示せず)を形成させ、エピタキシャル層上に複数の光感知素子18を形成する。即ち、半導体基板10上に第1エピタキシャル層(図示せず)を成長させ、第1エピタキシャル層に赤色光感知素子(図示せず)を形成した後、赤色光感知素子を含む第1エピタキシャル層上に第2エピタキシャル層(図示せず)を成長させ、第2エピタキシャル層に緑色光感知素子(図示せず)を形成する。
Claims (3)
- 半導体基板に形成された複数の光感知素子と、
前記複数の光感知素子上に形成された第1層間絶縁膜と、
前記第1層間絶縁膜内に形成された第1金属配線と、
前記第1層間絶縁膜上に形成された複数の内部のマイクロレンズと、
前記複数の内部のマイクロレンズ上に形成された第2層間絶縁膜と、
前記第2層間絶縁膜内に形成された第2金属配線と、
前記第2層間絶縁膜上に形成された素子保護膜と、
前記素子保護膜上に形成された複数のマイクロレンズと
を含むCMOSイメージセンサーにおいて、
前記CMOSイメージセンサーは前記第1層間絶縁膜上に接合されたシリコン膜をさらに含み、前記内部のマイクロレンズは前記光感知素子に対応するように前記シリコン膜内に形成されることを特徴とするCMOSイメージセンサー。 - 半導体基板に複数の光感知素子を形成する段階と、
前記複数の光感知素子上に第1層間絶縁膜と第1金属配線とを交互に形成して、最終的に前記第1金属配線上に前記第1層間絶縁膜を形成する段階と、
前記第1層間絶縁膜上に複数の内部のマイクロレンズを形成する段階と、
前記複数の内部のマイクロレンズ上に第2層間絶縁膜と第2金属配線とを交互に形成し、 最終的に前記第2金属配線上に前記第2層間絶縁膜を形成する段階と、
前記第2層間絶縁膜上に素子保護膜を形成する段階と、
前記素子保護膜上に複数のマイクロレンズを形成する段階と
を備え、
前記内部のマイクロレンズを形成する段階は、
前記第1層間絶縁膜上に上層と下層とが酸化膜で被覆されたシリコン膜を接合させる段階と、
前記シリコン膜上に前記光感知素子と対応する領域を開口した感光膜パターンを形成する段階と、
前記感光膜パターンをマスクにして前記シリコン膜をウェットエッチングすることで凹領域を形成する段階と、
前記凹領域を含む前記シリコン膜上に窒化膜を形成する段階と
を備えることを特徴とするCMOSイメージセンサーの製造方法。 - 前記凹領域を形成する段階は、
前記シリコン膜をウェットエッチングして、逆三角形状のプロファイルを生成する段階と、
前記シリコン膜の上層酸化膜を除去する段階と、
前記逆三角形状のプロファイルをケミカルドライエッチング工程を用いてラウンディング処理することで、凹領域を形成する段階と
を更に備えることを特徴とする請求項2に記載のCMOSイメージセンサーの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040116424A KR100649010B1 (ko) | 2004-12-30 | 2004-12-30 | 시모스 이미지 센서 및 그의 제조방법 |
KR1020040116425A KR20060077535A (ko) | 2004-12-30 | 2004-12-30 | 시모스 이미지 센서 및 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006191106A JP2006191106A (ja) | 2006-07-20 |
JP4448087B2 true JP4448087B2 (ja) | 2010-04-07 |
Family
ID=36641039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005379396A Expired - Fee Related JP4448087B2 (ja) | 2004-12-30 | 2005-12-28 | Cmosイメージセンサーとその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7449359B2 (ja) |
JP (1) | JP4448087B2 (ja) |
DE (1) | DE102005063111B4 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100718881B1 (ko) * | 2005-12-28 | 2007-05-17 | (주)실리콘화일 | 이미지센서용 포토다이오드 및 그 제조 방법 |
US8003428B2 (en) * | 2008-03-27 | 2011-08-23 | International Business Machines Corporation | Method of forming an inverted lens in a semiconductor structure |
KR20100077368A (ko) * | 2008-12-29 | 2010-07-08 | 주식회사 동부하이텍 | 씨모스 이미지 센서의 제조 방법 |
JP5754910B2 (ja) * | 2010-10-13 | 2015-07-29 | ローム株式会社 | 半導体装置 |
US8716823B2 (en) * | 2011-11-08 | 2014-05-06 | Aptina Imaging Corporation | Backside image sensor pixel with silicon microlenses and metal reflector |
JP2014011304A (ja) * | 2012-06-29 | 2014-01-20 | Toshiba Corp | 固体撮像装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3405620B2 (ja) * | 1995-05-22 | 2003-05-12 | 松下電器産業株式会社 | 固体撮像装置 |
US6171885B1 (en) * | 1999-10-12 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
JP2005072364A (ja) * | 2003-08-26 | 2005-03-17 | Fuji Film Microdevices Co Ltd | 固体撮像素子及びその製造方法 |
US7443005B2 (en) * | 2004-06-10 | 2008-10-28 | Tiawan Semiconductor Manufacturing Co., Ltd. | Lens structures suitable for use in image sensors and method for making the same |
-
2005
- 2005-12-28 JP JP2005379396A patent/JP4448087B2/ja not_active Expired - Fee Related
- 2005-12-29 US US11/319,570 patent/US7449359B2/en active Active
- 2005-12-30 DE DE102005063111A patent/DE102005063111B4/de not_active Expired - Fee Related
-
2008
- 2008-10-03 US US12/285,421 patent/US20090108310A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20060148159A1 (en) | 2006-07-06 |
DE102005063111A1 (de) | 2006-10-19 |
US7449359B2 (en) | 2008-11-11 |
JP2006191106A (ja) | 2006-07-20 |
DE102005063111B4 (de) | 2008-06-05 |
US20090108310A1 (en) | 2009-04-30 |
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