JP2003258381A5 - - Google Patents

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Publication number
JP2003258381A5
JP2003258381A5 JP2002059065A JP2002059065A JP2003258381A5 JP 2003258381 A5 JP2003258381 A5 JP 2003258381A5 JP 2002059065 A JP2002059065 A JP 2002059065A JP 2002059065 A JP2002059065 A JP 2002059065A JP 2003258381 A5 JP2003258381 A5 JP 2003258381A5
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JP
Japan
Prior art keywords
nitride semiconductor
composition ratio
semiconductor layer
forming
depth
Prior art date
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Application number
JP2002059065A
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English (en)
Japanese (ja)
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JP4251813B2 (ja
JP2003258381A (ja
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Priority to JP2002059065A priority Critical patent/JP4251813B2/ja
Priority claimed from JP2002059065A external-priority patent/JP4251813B2/ja
Publication of JP2003258381A publication Critical patent/JP2003258381A/ja
Publication of JP2003258381A5 publication Critical patent/JP2003258381A5/ja
Application granted granted Critical
Publication of JP4251813B2 publication Critical patent/JP4251813B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002059065A 2002-03-05 2002-03-05 窒化物半導体発光素子の製造方法 Expired - Lifetime JP4251813B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002059065A JP4251813B2 (ja) 2002-03-05 2002-03-05 窒化物半導体発光素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002059065A JP4251813B2 (ja) 2002-03-05 2002-03-05 窒化物半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2003258381A JP2003258381A (ja) 2003-09-12
JP2003258381A5 true JP2003258381A5 (enExample) 2005-09-15
JP4251813B2 JP4251813B2 (ja) 2009-04-08

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ID=28668867

Family Applications (1)

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JP2002059065A Expired - Lifetime JP4251813B2 (ja) 2002-03-05 2002-03-05 窒化物半導体発光素子の製造方法

Country Status (1)

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JP (1) JP4251813B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4822674B2 (ja) * 2004-04-30 2011-11-24 パナソニック株式会社 窒化物半導体素子およびその製造方法
JP4772314B2 (ja) * 2004-11-02 2011-09-14 シャープ株式会社 窒化物半導体素子
US8368183B2 (en) 2004-11-02 2013-02-05 Sharp Kabushiki Kaisha Nitride semiconductor device
JP2007201379A (ja) * 2006-01-30 2007-08-09 Hamamatsu Photonics Kk 化合物半導体基板、その製造方法及び半導体デバイス
JP5556657B2 (ja) 2008-05-14 2014-07-23 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
TWI656660B (zh) * 2011-10-27 2019-04-11 晶元光電股份有限公司 半導體發光二極體結構

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