JP4251813B2 - 窒化物半導体発光素子の製造方法 - Google Patents

窒化物半導体発光素子の製造方法 Download PDF

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Publication number
JP4251813B2
JP4251813B2 JP2002059065A JP2002059065A JP4251813B2 JP 4251813 B2 JP4251813 B2 JP 4251813B2 JP 2002059065 A JP2002059065 A JP 2002059065A JP 2002059065 A JP2002059065 A JP 2002059065A JP 4251813 B2 JP4251813 B2 JP 4251813B2
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nitride semiconductor
composition ratio
semiconductor layer
layer
light emitting
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JP2003258381A (ja
JP2003258381A5 (enExample
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輝芳 高倉
有三 津田
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Sharp Corp
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Sharp Corp
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JP2002059065A 2002-03-05 2002-03-05 窒化物半導体発光素子の製造方法 Expired - Lifetime JP4251813B2 (ja)

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JP2002059065A JP4251813B2 (ja) 2002-03-05 2002-03-05 窒化物半導体発光素子の製造方法

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JP2002059065A JP4251813B2 (ja) 2002-03-05 2002-03-05 窒化物半導体発光素子の製造方法

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JP2003258381A JP2003258381A (ja) 2003-09-12
JP2003258381A5 JP2003258381A5 (enExample) 2005-09-15
JP4251813B2 true JP4251813B2 (ja) 2009-04-08

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4822674B2 (ja) * 2004-04-30 2011-11-24 パナソニック株式会社 窒化物半導体素子およびその製造方法
JP4772314B2 (ja) * 2004-11-02 2011-09-14 シャープ株式会社 窒化物半導体素子
US8368183B2 (en) 2004-11-02 2013-02-05 Sharp Kabushiki Kaisha Nitride semiconductor device
JP2007201379A (ja) * 2006-01-30 2007-08-09 Hamamatsu Photonics Kk 化合物半導体基板、その製造方法及び半導体デバイス
JP5556657B2 (ja) 2008-05-14 2014-07-23 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
TWI656660B (zh) * 2011-10-27 2019-04-11 晶元光電股份有限公司 半導體發光二極體結構

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