JP2003249463A5 - - Google Patents

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Publication number
JP2003249463A5
JP2003249463A5 JP2002371821A JP2002371821A JP2003249463A5 JP 2003249463 A5 JP2003249463 A5 JP 2003249463A5 JP 2002371821 A JP2002371821 A JP 2002371821A JP 2002371821 A JP2002371821 A JP 2002371821A JP 2003249463 A5 JP2003249463 A5 JP 2003249463A5
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JP
Japan
Prior art keywords
nitride semiconductor
layer
substrate
grown
main surface
Prior art date
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Application number
JP2002371821A
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English (en)
Japanese (ja)
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JP2003249463A (ja
JP4442093B2 (ja
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Priority to JP2002371821A priority Critical patent/JP4442093B2/ja
Priority claimed from JP2002371821A external-priority patent/JP4442093B2/ja
Publication of JP2003249463A publication Critical patent/JP2003249463A/ja
Publication of JP2003249463A5 publication Critical patent/JP2003249463A5/ja
Application granted granted Critical
Publication of JP4442093B2 publication Critical patent/JP4442093B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002371821A 2002-12-24 2002-12-24 窒化物半導体積層用基板の製造方法 Expired - Fee Related JP4442093B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002371821A JP4442093B2 (ja) 2002-12-24 2002-12-24 窒化物半導体積層用基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002371821A JP4442093B2 (ja) 2002-12-24 2002-12-24 窒化物半導体積層用基板の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP6755398A Division JP3557894B2 (ja) 1998-03-18 1998-03-18 窒化物半導体基板および窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2003249463A JP2003249463A (ja) 2003-09-05
JP2003249463A5 true JP2003249463A5 (https=) 2005-01-20
JP4442093B2 JP4442093B2 (ja) 2010-03-31

Family

ID=28672789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002371821A Expired - Fee Related JP4442093B2 (ja) 2002-12-24 2002-12-24 窒化物半導体積層用基板の製造方法

Country Status (1)

Country Link
JP (1) JP4442093B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4889930B2 (ja) 2004-08-27 2012-03-07 シャープ株式会社 窒化物半導体レーザ素子の製造方法
US7633097B2 (en) * 2004-09-23 2009-12-15 Philips Lumileds Lighting Company, Llc Growth of III-nitride light emitting devices on textured substrates
JP2009164234A (ja) * 2007-12-28 2009-07-23 Rohm Co Ltd 窒化物半導体レーザ素子
JP2013145867A (ja) * 2011-12-15 2013-07-25 Hitachi Cable Ltd 窒化物半導体テンプレート及び発光ダイオード
WO2016199363A1 (ja) 2015-06-08 2016-12-15 パナソニックＩｐマネジメント株式会社 発光素子
JP7775708B2 (ja) * 2019-03-29 2025-11-26 三菱ケミカル株式会社 ＧａＮ基板ウエハおよびＧａＮ基板ウエハの製造方法

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