JP4442093B2 - 窒化物半導体積層用基板の製造方法 - Google Patents

窒化物半導体積層用基板の製造方法 Download PDF

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Publication number
JP4442093B2
JP4442093B2 JP2002371821A JP2002371821A JP4442093B2 JP 4442093 B2 JP4442093 B2 JP 4442093B2 JP 2002371821 A JP2002371821 A JP 2002371821A JP 2002371821 A JP2002371821 A JP 2002371821A JP 4442093 B2 JP4442093 B2 JP 4442093B2
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nitride semiconductor
layer
substrate
manufacturing
type impurity
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JP2003249463A (ja
JP2003249463A5 (https=
Inventor
義弘 川野
徳也 小崎
修二 中村
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Nichia Corp
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Nichia Corp
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  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2002371821A 2002-12-24 2002-12-24 窒化物半導体積層用基板の製造方法 Expired - Fee Related JP4442093B2 (ja)

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JP2002371821A JP4442093B2 (ja) 2002-12-24 2002-12-24 窒化物半導体積層用基板の製造方法

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JP2002371821A JP4442093B2 (ja) 2002-12-24 2002-12-24 窒化物半導体積層用基板の製造方法

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JP6755398A Division JP3557894B2 (ja) 1998-03-18 1998-03-18 窒化物半導体基板および窒化物半導体素子

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JP2003249463A JP2003249463A (ja) 2003-09-05
JP2003249463A5 JP2003249463A5 (https=) 2005-01-20
JP4442093B2 true JP4442093B2 (ja) 2010-03-31

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4889930B2 (ja) 2004-08-27 2012-03-07 シャープ株式会社 窒化物半導体レーザ素子の製造方法
US7633097B2 (en) * 2004-09-23 2009-12-15 Philips Lumileds Lighting Company, Llc Growth of III-nitride light emitting devices on textured substrates
JP2009164234A (ja) * 2007-12-28 2009-07-23 Rohm Co Ltd 窒化物半導体レーザ素子
JP2013145867A (ja) * 2011-12-15 2013-07-25 Hitachi Cable Ltd 窒化物半導体テンプレート及び発光ダイオード
WO2016199363A1 (ja) 2015-06-08 2016-12-15 パナソニックＩｐマネジメント株式会社 発光素子
JP7775708B2 (ja) * 2019-03-29 2025-11-26 三菱ケミカル株式会社 ＧａＮ基板ウエハおよびＧａＮ基板ウエハの製造方法

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