JP2003234061A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003234061A5 JP2003234061A5 JP2002376852A JP2002376852A JP2003234061A5 JP 2003234061 A5 JP2003234061 A5 JP 2003234061A5 JP 2002376852 A JP2002376852 A JP 2002376852A JP 2002376852 A JP2002376852 A JP 2002376852A JP 2003234061 A5 JP2003234061 A5 JP 2003234061A5
- Authority
- JP
- Japan
- Prior art keywords
- electron
- electric field
- forming
- emitting device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003860 storage Methods 0.000 claims 21
- 230000005684 electric field Effects 0.000 claims 17
- 238000000605 extraction Methods 0.000 claims 16
- 238000000034 method Methods 0.000 claims 14
- 239000004065 semiconductor Substances 0.000 claims 10
- 239000000463 material Substances 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 6
- 239000007787 solid Substances 0.000 claims 4
- 238000010894 electron beam technology Methods 0.000 claims 3
- 229910052697 platinum Inorganic materials 0.000 claims 3
- 239000004408 titanium dioxide Substances 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/042927 | 2002-01-09 | ||
| US10/042,927 US6806630B2 (en) | 2002-01-09 | 2002-01-09 | Electron emitter device for data storage applications and method of manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003234061A JP2003234061A (ja) | 2003-08-22 |
| JP2003234061A5 true JP2003234061A5 (https=) | 2005-07-21 |
Family
ID=21924485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002376852A Pending JP2003234061A (ja) | 2002-01-09 | 2002-12-26 | データ記憶素子に適用するための改善された電子放出素子および製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6806630B2 (https=) |
| EP (1) | EP1328002A1 (https=) |
| JP (1) | JP2003234061A (https=) |
| CN (1) | CN100414624C (https=) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7260051B1 (en) | 1998-12-18 | 2007-08-21 | Nanochip, Inc. | Molecular memory medium and molecular memory integrated circuit |
| US7554829B2 (en) | 1999-07-30 | 2009-06-30 | Micron Technology, Inc. | Transmission lines for CMOS integrated circuits |
| US20020138301A1 (en) * | 2001-03-22 | 2002-09-26 | Thanos Karras | Integration of a portal into an application service provider data archive and/or web based viewer |
| US7474002B2 (en) * | 2001-10-30 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having dielectric film having aperture portion |
| US20050132549A1 (en) * | 2001-11-16 | 2005-06-23 | Wong-Cheng Shih | Method for making metal capacitors with low leakage currents for mixed-signal devices |
| US7101770B2 (en) | 2002-01-30 | 2006-09-05 | Micron Technology, Inc. | Capacitive techniques to reduce noise in high speed interconnections |
| US7235457B2 (en) * | 2002-03-13 | 2007-06-26 | Micron Technology, Inc. | High permeability layered films to reduce noise in high speed interconnects |
| US6835619B2 (en) * | 2002-08-08 | 2004-12-28 | Micron Technology, Inc. | Method of forming a memory transistor comprising a Schottky contact |
| US7068582B2 (en) * | 2002-09-30 | 2006-06-27 | The Regents Of The University Of California | Read head for ultra-high-density information storage media and method for making the same |
| US6822379B2 (en) * | 2002-10-01 | 2004-11-23 | Hewlett-Packard Development Company, L.P. | Emission device and method for forming |
| US7233517B2 (en) * | 2002-10-15 | 2007-06-19 | Nanochip, Inc. | Atomic probes and media for high density data storage |
| US7790226B2 (en) * | 2003-10-27 | 2010-09-07 | California Institute Of Technology | Pyrolyzed thin film carbon |
| US20050243592A1 (en) * | 2004-04-16 | 2005-11-03 | Rust Thomas F | High density data storage device having eraseable bit cells |
| US20050243660A1 (en) * | 2004-04-16 | 2005-11-03 | Rust Thomas F | Methods for erasing bit cells in a high density data storage device |
| WO2006061686A2 (en) * | 2004-12-10 | 2006-06-15 | Johan Frans Prins | A cathodic device |
| KR100575002B1 (ko) | 2004-12-16 | 2006-05-02 | 삼성전자주식회사 | 공통 게이트를 구비하는 상보형 금속 산화물 반도체 박막트랜지스터, 이를 포함하는 논리소자 및 그 트랜지스터의제조 방법 |
| TWI324024B (en) * | 2005-01-14 | 2010-04-21 | Hon Hai Prec Ind Co Ltd | Field emission type light source |
| US7367119B2 (en) | 2005-06-24 | 2008-05-06 | Nanochip, Inc. | Method for forming a reinforced tip for a probe storage device |
| US20070041237A1 (en) * | 2005-07-08 | 2007-02-22 | Nanochip, Inc. | Media for writing highly resolved domains |
| US7463573B2 (en) | 2005-06-24 | 2008-12-09 | Nanochip, Inc. | Patterned media for a high density data storage device |
| US20070008866A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | Methods for writing and reading in a polarity-dependent memory switch media |
| US20070008867A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | High density data storage devices with a lubricant layer comprised of a field of polymer chains |
| US20070008865A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | High density data storage devices with polarity-dependent memory switching media |
| US7309630B2 (en) | 2005-07-08 | 2007-12-18 | Nanochip, Inc. | Method for forming patterned media for a high density data storage device |
| CN1941263B (zh) * | 2005-09-29 | 2011-12-14 | 清华大学 | 场发射显示器 |
| JP2007266083A (ja) * | 2006-03-27 | 2007-10-11 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US20080001075A1 (en) * | 2006-06-15 | 2008-01-03 | Nanochip, Inc. | Memory stage for a probe storage device |
| US7887668B2 (en) * | 2006-08-30 | 2011-02-15 | Dow Global Technologies Inc. | Amine organoborane polymerizable compostion and uses therefor |
| US8101130B2 (en) * | 2006-09-15 | 2012-01-24 | Applied Nanotech Holdings, Inc. | Gas ionization source |
| US20080175033A1 (en) * | 2007-01-19 | 2008-07-24 | Nanochip, Inc. | Method and system for improving domain stability in a ferroelectric media |
| US20080174918A1 (en) * | 2007-01-19 | 2008-07-24 | Nanochip, Inc. | Method and system for writing and reading a charge-trap media with a probe tip |
| US20080233672A1 (en) * | 2007-03-20 | 2008-09-25 | Nanochip, Inc. | Method of integrating mems structures and cmos structures using oxide fusion bonding |
| JP2008282607A (ja) * | 2007-05-09 | 2008-11-20 | Canon Inc | 電子放出素子、電子源、画像表示装置、および、電子放出素子の製造方法 |
| JP5024885B2 (ja) * | 2008-03-05 | 2012-09-12 | 国立大学法人東北大学 | 陰極体 |
| US20090294028A1 (en) * | 2008-06-03 | 2009-12-03 | Nanochip, Inc. | Process for fabricating high density storage device with high-temperature media |
| US8022609B2 (en) * | 2008-06-24 | 2011-09-20 | Hermes-Microvision, Inc. | Thermal field emission cathode |
| US20100039919A1 (en) * | 2008-08-15 | 2010-02-18 | Nanochip, Inc. | Cantilever Structure for Use in Seek-and-Scan Probe Storage |
| CN102157316B (zh) * | 2011-03-09 | 2013-04-24 | 北京工业大学 | 具有增强电子发射性能的薄膜场发射阴极及其制备方法 |
| WO2013187970A2 (en) * | 2012-05-14 | 2013-12-19 | The General Hospital Corporation | Method for coded-source phase contrast x-ray imaging |
| US11454820B2 (en) | 2019-10-17 | 2022-09-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multifunctional collimator for contact image sensors |
| EP3940740A1 (en) * | 2020-07-16 | 2022-01-19 | ASML Netherlands B.V. | Emitter for emitting charged particles |
| CN115424909B (zh) * | 2022-08-02 | 2025-07-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场发射器件及其制作方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB853352A (en) * | 1957-12-16 | 1960-11-02 | Vickers Electrical Co Ltd | Improvements relating to electron emitters |
| FR1204367A (fr) | 1958-03-24 | 1960-01-26 | Csf | Cathode thermoélectronique froide à semi-conducteur |
| US3105166A (en) | 1959-01-15 | 1963-09-24 | Westinghouse Electric Corp | Electron tube with a cold emissive cathode |
| NL283434A (https=) | 1961-09-25 | |||
| US3150282A (en) | 1962-11-13 | 1964-09-22 | Stanford Research Inst | High efficiency cathode structure |
| US3789471A (en) * | 1970-02-06 | 1974-02-05 | Stanford Research Inst | Field emission cathode structures, devices utilizing such structures, and methods of producing such structures |
| US3755704A (en) * | 1970-02-06 | 1973-08-28 | Stanford Research Inst | Field emission cathode structures and devices utilizing such structures |
| US3916227A (en) | 1972-01-24 | 1975-10-28 | Braun Ag | Piezoelectric igniter with a magnetic striking mechanism |
| US4498952A (en) * | 1982-09-17 | 1985-02-12 | Condesin, Inc. | Batch fabrication procedure for manufacture of arrays of field emitted electron beams with integral self-aligned optical lense in microguns |
| US4663559A (en) * | 1982-09-17 | 1987-05-05 | Christensen Alton O | Field emission device |
| JPH05342983A (ja) * | 1992-06-08 | 1993-12-24 | Saamobonitsuku:Kk | 熱電変換素子 |
| US5584739A (en) * | 1993-02-10 | 1996-12-17 | Futaba Denshi Kogyo K.K | Field emission element and process for manufacturing same |
| JPH0778581A (ja) * | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 単色化電子線源およびその製造方法 |
| JP3390255B2 (ja) * | 1994-06-24 | 2003-03-24 | 富士通株式会社 | 電界放出陰極装置及びその製造方法 |
| JP2964885B2 (ja) * | 1994-10-28 | 1999-10-18 | 関西日本電気株式会社 | 電子放出素子 |
| US5557596A (en) | 1995-03-20 | 1996-09-17 | Gibson; Gary | Ultra-high density storage device |
| US5835119A (en) | 1995-10-31 | 1998-11-10 | Hewlett- Packard Company | Face emitting electroluminescent exposure array |
| JP3580930B2 (ja) * | 1996-01-18 | 2004-10-27 | 住友電気工業株式会社 | 電子放出装置 |
| GB9616265D0 (en) | 1996-08-02 | 1996-09-11 | Philips Electronics Uk Ltd | Electron devices |
| US6091190A (en) * | 1997-07-28 | 2000-07-18 | Motorola, Inc. | Field emission device |
| JP3570864B2 (ja) | 1997-08-08 | 2004-09-29 | パイオニア株式会社 | 電子放出素子及びこれを用いた表示装置 |
| US6011356A (en) | 1998-04-30 | 2000-01-04 | St. Clair Intellectual Property Consultants, Inc. | Flat surface emitter for use in field emission display devices |
| EP0959485A1 (en) | 1998-05-18 | 1999-11-24 | Barco N.V. | Cold cathode electron-emitting device |
| TW375755B (en) * | 1998-06-10 | 1999-12-01 | United Microelectronics Corp | Process for emitter of field emission display |
| US6351254B2 (en) | 1998-07-06 | 2002-02-26 | The Regents Of The University Of California | Junction-based field emission structure for field emission display |
| FR2793602B1 (fr) | 1999-05-12 | 2001-08-03 | Univ Claude Bernard Lyon | Procede et dispositif pour extraire des electrons dans le vide et cathodes d'emission pour un tel dispositif |
| JP3546945B2 (ja) * | 1999-10-14 | 2004-07-28 | 日本電気株式会社 | 冷陰極装置 |
| FR2801135B1 (fr) * | 1999-11-12 | 2002-02-08 | Univ Claude Bernard Lyon | Procede de realisation d'une cathode d'emission a l'aide de la technique sol-gel et cathode obtenue par un tel procede |
| JP3361083B2 (ja) * | 1999-12-28 | 2003-01-07 | 株式会社東芝 | 電子放出デバイス |
| US6914374B2 (en) * | 2002-01-09 | 2005-07-05 | Hewlett-Packard Development Company, L.P. | Planar electron emitter apparatus with improved emission area and method of manufacture |
-
2002
- 2002-01-09 US US10/042,927 patent/US6806630B2/en not_active Expired - Fee Related
- 2002-12-26 JP JP2002376852A patent/JP2003234061A/ja active Pending
-
2003
- 2003-01-09 EP EP03250114A patent/EP1328002A1/en not_active Withdrawn
- 2003-01-09 CN CNB031010792A patent/CN100414624C/zh not_active Expired - Fee Related
- 2003-10-30 US US10/697,170 patent/US6864624B2/en not_active Expired - Fee Related
-
2004
- 2004-09-01 US US10/932,695 patent/US7585687B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003234061A5 (https=) | ||
| US6864624B2 (en) | Electron emitter device for data storage applications | |
| US4213192A (en) | Electron beam accessed read-write-erase random access memory | |
| US20010017515A1 (en) | Display device using thin film cathode and its process | |
| JP2000090809A (ja) | 電界放出陰極、電子放出素子および電界放出陰極の製造方法 | |
| JP3801468B2 (ja) | 変調された陰極導電率に基づく超高密度情報記憶装置 | |
| US7102157B2 (en) | Nanotube-based vacuum devices | |
| JP2002109794A5 (https=) | ||
| US6815875B2 (en) | Electron source having planar emission region and focusing structure | |
| US7214587B2 (en) | Method for fabricating a semiconductor memory cell | |
| EP1251503A2 (en) | Data storage device | |
| US7176478B2 (en) | Nanotube-based vacuum devices | |
| JP2001068012A (ja) | 電界放射型電子源およびその製造方法 | |
| Chang et al. | Simulation of field-emission triode using carbon nanotube emitters | |
| US6841794B2 (en) | Dielectric emitter with PN junction | |
| US6916182B2 (en) | Connection arrangements for electrical devices having a ledge on which contact terminals are provided | |
| US6787792B2 (en) | Emitter with filled zeolite emission layer | |
| JP4168989B2 (ja) | 電子線露光用電子源 | |
| EP0038865A1 (en) | Electron beam storage apparatus | |
| JP2790218B2 (ja) | 電界放出型電子放出素子 | |
| Chubun et al. | Field-emission characterization of the 10× 10 singly addressable double-gated polysilicon tip array | |
| JPS63185025A (ja) | 電子放出装置 | |
| JPH0794103A (ja) | 金属−絶縁体−金属型電子放出素子およびそれを用いた電子線放出装置等の応用機器の駆動方法 | |
| JP2790219B2 (ja) | 電界放出型電子放出素子 | |
| MOURAD et al. | OXIDE/SILICON MONOXIDE/GOLD STRUCTURE |