CN100414624C - 用于数据存储应用的改进的电子发射器件及其制造方法 - Google Patents

用于数据存储应用的改进的电子发射器件及其制造方法 Download PDF

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Publication number
CN100414624C
CN100414624C CNB031010792A CN03101079A CN100414624C CN 100414624 C CN100414624 C CN 100414624C CN B031010792 A CNB031010792 A CN B031010792A CN 03101079 A CN03101079 A CN 03101079A CN 100414624 C CN100414624 C CN 100414624C
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China
Prior art keywords
emitter
electrode
layer
field
semiconductor
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Expired - Fee Related
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CNB031010792A
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English (en)
Chinese (zh)
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CN1433010A (zh
Inventor
H·比雷基
V·T·宾
S·-T·林
H·P·郭
S·L·纳伯惠斯
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HP Inc
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Hewlett Packard Co
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
CNB031010792A 2002-01-09 2003-01-09 用于数据存储应用的改进的电子发射器件及其制造方法 Expired - Fee Related CN100414624C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/042927 2002-01-09
US10/042,927 US6806630B2 (en) 2002-01-09 2002-01-09 Electron emitter device for data storage applications and method of manufacture

Publications (2)

Publication Number Publication Date
CN1433010A CN1433010A (zh) 2003-07-30
CN100414624C true CN100414624C (zh) 2008-08-27

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CNB031010792A Expired - Fee Related CN100414624C (zh) 2002-01-09 2003-01-09 用于数据存储应用的改进的电子发射器件及其制造方法

Country Status (4)

Country Link
US (3) US6806630B2 (https=)
EP (1) EP1328002A1 (https=)
JP (1) JP2003234061A (https=)
CN (1) CN100414624C (https=)

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US20070041237A1 (en) * 2005-07-08 2007-02-22 Nanochip, Inc. Media for writing highly resolved domains
US7463573B2 (en) 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US20070008866A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. Methods for writing and reading in a polarity-dependent memory switch media
US20070008867A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with a lubricant layer comprised of a field of polymer chains
US20070008865A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with polarity-dependent memory switching media
US7309630B2 (en) 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
CN1941263B (zh) * 2005-09-29 2011-12-14 清华大学 场发射显示器
JP2007266083A (ja) * 2006-03-27 2007-10-11 Renesas Technology Corp 半導体装置およびその製造方法
US20080001075A1 (en) * 2006-06-15 2008-01-03 Nanochip, Inc. Memory stage for a probe storage device
US7887668B2 (en) * 2006-08-30 2011-02-15 Dow Global Technologies Inc. Amine organoborane polymerizable compostion and uses therefor
US8101130B2 (en) * 2006-09-15 2012-01-24 Applied Nanotech Holdings, Inc. Gas ionization source
US20080175033A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for improving domain stability in a ferroelectric media
US20080174918A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for writing and reading a charge-trap media with a probe tip
US20080233672A1 (en) * 2007-03-20 2008-09-25 Nanochip, Inc. Method of integrating mems structures and cmos structures using oxide fusion bonding
JP2008282607A (ja) * 2007-05-09 2008-11-20 Canon Inc 電子放出素子、電子源、画像表示装置、および、電子放出素子の製造方法
JP5024885B2 (ja) * 2008-03-05 2012-09-12 国立大学法人東北大学 陰極体
US20090294028A1 (en) * 2008-06-03 2009-12-03 Nanochip, Inc. Process for fabricating high density storage device with high-temperature media
US8022609B2 (en) * 2008-06-24 2011-09-20 Hermes-Microvision, Inc. Thermal field emission cathode
US20100039919A1 (en) * 2008-08-15 2010-02-18 Nanochip, Inc. Cantilever Structure for Use in Seek-and-Scan Probe Storage
CN102157316B (zh) * 2011-03-09 2013-04-24 北京工业大学 具有增强电子发射性能的薄膜场发射阴极及其制备方法
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CN115424909B (zh) * 2022-08-02 2025-07-25 中国科学院苏州纳米技术与纳米仿生研究所 场发射器件及其制作方法

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Also Published As

Publication number Publication date
US6864624B2 (en) 2005-03-08
US20030128494A1 (en) 2003-07-10
US20040095868A1 (en) 2004-05-20
US6806630B2 (en) 2004-10-19
CN1433010A (zh) 2003-07-30
US7585687B2 (en) 2009-09-08
US20050029920A1 (en) 2005-02-10
EP1328002A1 (en) 2003-07-16
JP2003234061A (ja) 2003-08-22

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