JP2002109794A5 - - Google Patents

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Publication number
JP2002109794A5
JP2002109794A5 JP2001254273A JP2001254273A JP2002109794A5 JP 2002109794 A5 JP2002109794 A5 JP 2002109794A5 JP 2001254273 A JP2001254273 A JP 2001254273A JP 2001254273 A JP2001254273 A JP 2001254273A JP 2002109794 A5 JP2002109794 A5 JP 2002109794A5
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JP
Japan
Prior art keywords
medium
storage device
cathode
energy beam
storage area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001254273A
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English (en)
Japanese (ja)
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JP2002109794A (ja
JP3801468B2 (ja
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Publication date
Priority claimed from US09/652,777 external-priority patent/US6473388B1/en
Application filed filed Critical
Publication of JP2002109794A publication Critical patent/JP2002109794A/ja
Publication of JP2002109794A5 publication Critical patent/JP2002109794A5/ja
Application granted granted Critical
Publication of JP3801468B2 publication Critical patent/JP3801468B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001254273A 2000-08-31 2001-08-24 変調された陰極導電率に基づく超高密度情報記憶装置 Expired - Fee Related JP3801468B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/652,777 US6473388B1 (en) 2000-08-31 2000-08-31 Ultra-high density information storage device based on modulated cathodoconductivity
US09/652777 2000-08-31

Publications (3)

Publication Number Publication Date
JP2002109794A JP2002109794A (ja) 2002-04-12
JP2002109794A5 true JP2002109794A5 (https=) 2005-03-17
JP3801468B2 JP3801468B2 (ja) 2006-07-26

Family

ID=24618117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001254273A Expired - Fee Related JP3801468B2 (ja) 2000-08-31 2001-08-24 変調された陰極導電率に基づく超高密度情報記憶装置

Country Status (4)

Country Link
US (1) US6473388B1 (https=)
EP (1) EP1187123A3 (https=)
JP (1) JP3801468B2 (https=)
CN (1) CN1183598C (https=)

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Publication number Priority date Publication date Assignee Title
JP3716467B2 (ja) * 1995-07-19 2005-11-16 ソニー株式会社 記録媒体並びに情報再生装置、情報記録装置及び情報記録再生装置
US6735163B2 (en) * 2001-03-02 2004-05-11 Hewlett-Packard Development Company, L.P. Ultra-high density storage device with resonant scanning micromover
JP3474863B2 (ja) * 2001-03-29 2003-12-08 株式会社東芝 電界放出型電子源の製造方法とマトリックス型電子源アレイ基板の製造方法
US6643248B2 (en) * 2001-04-16 2003-11-04 Hewlett-Packard Development Company, L.P. Data storage device
US6970413B2 (en) * 2001-05-25 2005-11-29 Hewlett-Packard Development Company, L.P. Data storage medium utilizing directed light beam and near-field optical sources
US7082095B2 (en) * 2001-05-25 2006-07-25 Hewlett-Packard Development Company, L.P. System and method for storing data
US6975575B2 (en) * 2001-10-31 2005-12-13 Hewlett-Packard Development Company, L.P. Data storage media and methods utilizing a layer adjacent the storage layer
KR100429843B1 (ko) * 2001-09-22 2004-05-03 삼성전자주식회사 전자 방출 및 상변화물질을 이용한 고밀도정보기록/재생방법 및 이를 응용한 정보저장장치 및 이에사용되는 미디어
NO20015509D0 (no) * 2001-11-09 2001-11-09 Hans Gude Gudesen Elektrodeanordning, fremgangsmåte til dets fremstilling, apparat omfattende elektrodeanordningene, samt bruk av sistnevnte
US6833593B2 (en) 2001-11-09 2004-12-21 Thin Film Electronics Asa Electrode means, a method for its manufacture, an apparatus comprising the electrode means as well as use of the latter
NO316632B1 (no) * 2001-11-16 2004-03-15 Thin Film Electronics Asa Matriseadresserbart optoelektronisk apparat og elektrodeanordning i samme
NO20015837A (no) * 2001-11-29 2003-05-12 Hans Gude Gudesen Fremgangsmåte til fremstilling av selvregistrerende ikke-litografiske transistorer med ultrakorte kanallengder
NO314736B1 (no) * 2001-12-10 2003-05-12 Hans Gude Gudesen Matriseadresserbar gruppe av integrerte transistor/minnestrukturer
NO315884B1 (no) * 2001-12-14 2003-11-03 Hans Gude Gudesen Fremgangsmåte til fremstilling av elektroder med höyt sideforhold
US7027380B2 (en) * 2002-05-02 2006-04-11 Hewlett-Packard Development Company, L.P. Atomic resolution storage device
US7280456B2 (en) * 2003-07-28 2007-10-09 Intel Corporation Methods and apparatus for determining the state of a variable resistive layer in a material stack
US7085151B2 (en) * 2004-01-13 2006-08-01 Hewlett-Packard Development Company, L.P. Storage device having a resistance measurement system
US20050185568A1 (en) * 2004-02-23 2005-08-25 Davidson Robert J. Storage device
US20060233091A1 (en) * 2005-04-01 2006-10-19 Schut David M Storage device having storage cells having a size less than a write light wavelength
EP2630196B1 (en) 2010-10-20 2017-09-06 Li-Cor, Inc. Cyanine dyes and their conjugates
CN105845590B (zh) * 2015-01-13 2019-12-10 中芯国际集成电路制造(上海)有限公司 一种检测金属缺陷的方法

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US3403284A (en) * 1966-12-29 1968-09-24 Bell Telephone Labor Inc Target structure storage device using diode array
US3530441A (en) * 1969-01-15 1970-09-22 Energy Conversion Devices Inc Method and apparatus for storing and retrieving information
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US3872318A (en) * 1971-04-08 1975-03-18 Kureha Chemical Ind Co Ltd Pyroelectric element of polymer film
GB1513141A (en) * 1975-03-18 1978-06-07 Arthur B Method of producing single crystalline self-supporting targets for photon and electron sensitive devices
DE3581522D1 (de) * 1984-12-28 1991-02-28 Toshiba Kawasaki Kk Auswechselbares speichersystem.
JPS6318541A (ja) * 1986-07-11 1988-01-26 Hitachi Ltd 電子線記録再生方法及びその装置
US4888758A (en) * 1987-11-23 1989-12-19 Scruggs David M Data storage using amorphous metallic storage medium
US5270995A (en) * 1989-01-13 1993-12-14 Sharp Kabushiki Kaisha Method for recording and reproducing information by varying a work function of a recording medium and device for the same
US5557596A (en) 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
US6087674A (en) * 1996-10-28 2000-07-11 Energy Conversion Devices, Inc. Memory element with memory material comprising phase-change material and dielectric material
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