NO20015837A - Fremgangsmåte til fremstilling av selvregistrerende ikke-litografiske transistorer med ultrakorte kanallengder - Google Patents

Fremgangsmåte til fremstilling av selvregistrerende ikke-litografiske transistorer med ultrakorte kanallengder

Info

Publication number
NO20015837A
NO20015837A NO20015837A NO20015837A NO20015837A NO 20015837 A NO20015837 A NO 20015837A NO 20015837 A NO20015837 A NO 20015837A NO 20015837 A NO20015837 A NO 20015837A NO 20015837 A NO20015837 A NO 20015837A
Authority
NO
Norway
Prior art keywords
lithographic
transistors
ultra
short channel
channel lengths
Prior art date
Application number
NO20015837A
Other languages
English (en)
Other versions
NO20015837D0 (no
NO314738B1 (no
Inventor
Hans Gude Gudesen
Original Assignee
Hans Gude Gudesen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hans Gude Gudesen filed Critical Hans Gude Gudesen
Priority to NO20015837A priority Critical patent/NO314738B1/no
Publication of NO20015837D0 publication Critical patent/NO20015837D0/no
Priority to PCT/NO2002/000397 priority patent/WO2003046921A1/en
Priority to RU2004118416/28A priority patent/RU2261499C2/ru
Priority to JP2003548252A priority patent/JP2005510864A/ja
Priority to CNA028239601A priority patent/CN1599936A/zh
Priority to AU2002365533A priority patent/AU2002365533A1/en
Priority to EP02803936A priority patent/EP1449217A1/en
Priority to KR1020047008231A priority patent/KR100543076B1/ko
Priority to CA002468615A priority patent/CA2468615C/en
Priority to US10/293,488 priority patent/US6753217B2/en
Publication of NO20015837A publication Critical patent/NO20015837A/no
Publication of NO314738B1 publication Critical patent/NO314738B1/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NO20015837A 2001-11-29 2001-11-29 Fremgangsmåte til fremstilling av selvregistrerende ikke- litografiske transistorer med ultrakorte kanallengder NO314738B1 (no)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NO20015837A NO314738B1 (no) 2001-11-29 2001-11-29 Fremgangsmåte til fremstilling av selvregistrerende ikke- litografiske transistorer med ultrakorte kanallengder
CA002468615A CA2468615C (en) 2001-11-29 2002-11-01 A method for making self-registering non-lithographic transistors with ultrashort channel lengths
CNA028239601A CN1599936A (zh) 2001-11-29 2002-11-01 一种制造具有超短槽长的自动记录的非光刻晶体管的方法
RU2004118416/28A RU2261499C2 (ru) 2001-11-29 2002-11-01 Способ изготовления самосовмещенных транзисторов со сверхкороткой длиной канала, получаемой нелитографическим методом
JP2003548252A JP2005510864A (ja) 2001-11-29 2002-11-01 極短チャネル長さの自己位置合わせ非リソグラフィ・トランジスタ製造方法
PCT/NO2002/000397 WO2003046921A1 (en) 2001-11-29 2002-11-01 A method for making self-registering non-lithographic transistors with ultrashort channel lengths
AU2002365533A AU2002365533A1 (en) 2001-11-29 2002-11-01 A method for making self-registering non-lithographic transistors with ultrashort channel lengths
EP02803936A EP1449217A1 (en) 2001-11-29 2002-11-01 A method for making self-registering non-lithographic transistors with ultrashort channel lengths
KR1020047008231A KR100543076B1 (ko) 2001-11-29 2002-11-01 초단 채널 길이를 가진 자기-정합 비-리소그래피트랜지스터들의 제조 방법
US10/293,488 US6753217B2 (en) 2001-11-29 2002-11-14 Method for making self-registering non-lithographic transistors with ultrashort channel lengths

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20015837A NO314738B1 (no) 2001-11-29 2001-11-29 Fremgangsmåte til fremstilling av selvregistrerende ikke- litografiske transistorer med ultrakorte kanallengder

Publications (3)

Publication Number Publication Date
NO20015837D0 NO20015837D0 (no) 2001-11-29
NO20015837A true NO20015837A (no) 2003-05-12
NO314738B1 NO314738B1 (no) 2003-05-12

Family

ID=19913080

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20015837A NO314738B1 (no) 2001-11-29 2001-11-29 Fremgangsmåte til fremstilling av selvregistrerende ikke- litografiske transistorer med ultrakorte kanallengder

Country Status (9)

Country Link
EP (1) EP1449217A1 (no)
JP (1) JP2005510864A (no)
KR (1) KR100543076B1 (no)
CN (1) CN1599936A (no)
AU (1) AU2002365533A1 (no)
CA (1) CA2468615C (no)
NO (1) NO314738B1 (no)
RU (1) RU2261499C2 (no)
WO (1) WO2003046921A1 (no)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724028B2 (en) 2001-12-10 2004-04-20 Hans Gude Gudesen Matrix-addressable array of integrated transistor/memory structures
US6649504B2 (en) 2001-12-14 2003-11-18 Thin Film Electronics Asa Method for fabricating high aspect ratio electrodes
US9035281B2 (en) 2009-06-30 2015-05-19 Nokia Technologies Oy Graphene device and method of fabricating a graphene device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4952031A (en) * 1987-06-19 1990-08-28 Victor Company Of Japan, Ltd. Liquid crystal display device
JPH07106450A (ja) * 1993-10-08 1995-04-21 Olympus Optical Co Ltd 強誘電体ゲートトランジスタメモリ
DE69739045D1 (de) * 1997-08-27 2008-11-27 St Microelectronics Srl Herstellungsverfahren für elektronische Speicherbauelemente mit virtueller Masse
US6072716A (en) * 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
US6473388B1 (en) * 2000-08-31 2002-10-29 Hewlett Packard Company Ultra-high density information storage device based on modulated cathodoconductivity

Also Published As

Publication number Publication date
AU2002365533A1 (en) 2003-06-10
CN1599936A (zh) 2005-03-23
JP2005510864A (ja) 2005-04-21
NO20015837D0 (no) 2001-11-29
RU2004118416A (ru) 2005-04-10
KR100543076B1 (ko) 2006-01-20
RU2261499C2 (ru) 2005-09-27
WO2003046921A1 (en) 2003-06-05
CA2468615C (en) 2007-03-20
CA2468615A1 (en) 2003-06-05
KR20040064290A (ko) 2004-07-16
EP1449217A1 (en) 2004-08-25
NO314738B1 (no) 2003-05-12

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