NO20015837D0 - Fremgangsmåte til fremstilling av selvregistrerende ikke- litografiske transistorer med ultrakorte kanallengder - Google Patents
Fremgangsmåte til fremstilling av selvregistrerende ikke- litografiske transistorer med ultrakorte kanallengderInfo
- Publication number
- NO20015837D0 NO20015837D0 NO20015837A NO20015837A NO20015837D0 NO 20015837 D0 NO20015837 D0 NO 20015837D0 NO 20015837 A NO20015837 A NO 20015837A NO 20015837 A NO20015837 A NO 20015837A NO 20015837 D0 NO20015837 D0 NO 20015837D0
- Authority
- NO
- Norway
- Prior art keywords
- lithographic
- transistors
- ultra
- short channel
- channel lengths
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20015837A NO314738B1 (no) | 2001-11-29 | 2001-11-29 | Fremgangsmåte til fremstilling av selvregistrerende ikke- litografiske transistorer med ultrakorte kanallengder |
CA002468615A CA2468615C (en) | 2001-11-29 | 2002-11-01 | A method for making self-registering non-lithographic transistors with ultrashort channel lengths |
CNA028239601A CN1599936A (zh) | 2001-11-29 | 2002-11-01 | 一种制造具有超短槽长的自动记录的非光刻晶体管的方法 |
RU2004118416/28A RU2261499C2 (ru) | 2001-11-29 | 2002-11-01 | Способ изготовления самосовмещенных транзисторов со сверхкороткой длиной канала, получаемой нелитографическим методом |
JP2003548252A JP2005510864A (ja) | 2001-11-29 | 2002-11-01 | 極短チャネル長さの自己位置合わせ非リソグラフィ・トランジスタ製造方法 |
PCT/NO2002/000397 WO2003046921A1 (en) | 2001-11-29 | 2002-11-01 | A method for making self-registering non-lithographic transistors with ultrashort channel lengths |
AU2002365533A AU2002365533A1 (en) | 2001-11-29 | 2002-11-01 | A method for making self-registering non-lithographic transistors with ultrashort channel lengths |
EP02803936A EP1449217A1 (en) | 2001-11-29 | 2002-11-01 | A method for making self-registering non-lithographic transistors with ultrashort channel lengths |
KR1020047008231A KR100543076B1 (ko) | 2001-11-29 | 2002-11-01 | 초단 채널 길이를 가진 자기-정합 비-리소그래피트랜지스터들의 제조 방법 |
US10/293,488 US6753217B2 (en) | 2001-11-29 | 2002-11-14 | Method for making self-registering non-lithographic transistors with ultrashort channel lengths |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20015837A NO314738B1 (no) | 2001-11-29 | 2001-11-29 | Fremgangsmåte til fremstilling av selvregistrerende ikke- litografiske transistorer med ultrakorte kanallengder |
Publications (3)
Publication Number | Publication Date |
---|---|
NO20015837D0 true NO20015837D0 (no) | 2001-11-29 |
NO20015837A NO20015837A (no) | 2003-05-12 |
NO314738B1 NO314738B1 (no) | 2003-05-12 |
Family
ID=19913080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20015837A NO314738B1 (no) | 2001-11-29 | 2001-11-29 | Fremgangsmåte til fremstilling av selvregistrerende ikke- litografiske transistorer med ultrakorte kanallengder |
Country Status (9)
Country | Link |
---|---|
EP (1) | EP1449217A1 (no) |
JP (1) | JP2005510864A (no) |
KR (1) | KR100543076B1 (no) |
CN (1) | CN1599936A (no) |
AU (1) | AU2002365533A1 (no) |
CA (1) | CA2468615C (no) |
NO (1) | NO314738B1 (no) |
RU (1) | RU2261499C2 (no) |
WO (1) | WO2003046921A1 (no) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6724028B2 (en) | 2001-12-10 | 2004-04-20 | Hans Gude Gudesen | Matrix-addressable array of integrated transistor/memory structures |
US6649504B2 (en) | 2001-12-14 | 2003-11-18 | Thin Film Electronics Asa | Method for fabricating high aspect ratio electrodes |
US9035281B2 (en) | 2009-06-30 | 2015-05-19 | Nokia Technologies Oy | Graphene device and method of fabricating a graphene device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4952031A (en) * | 1987-06-19 | 1990-08-28 | Victor Company Of Japan, Ltd. | Liquid crystal display device |
JPH07106450A (ja) * | 1993-10-08 | 1995-04-21 | Olympus Optical Co Ltd | 強誘電体ゲートトランジスタメモリ |
DE69739045D1 (de) * | 1997-08-27 | 2008-11-27 | St Microelectronics Srl | Herstellungsverfahren für elektronische Speicherbauelemente mit virtueller Masse |
US6072716A (en) * | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
US6473388B1 (en) * | 2000-08-31 | 2002-10-29 | Hewlett Packard Company | Ultra-high density information storage device based on modulated cathodoconductivity |
-
2001
- 2001-11-29 NO NO20015837A patent/NO314738B1/no unknown
-
2002
- 2002-11-01 KR KR1020047008231A patent/KR100543076B1/ko not_active IP Right Cessation
- 2002-11-01 WO PCT/NO2002/000397 patent/WO2003046921A1/en not_active Application Discontinuation
- 2002-11-01 RU RU2004118416/28A patent/RU2261499C2/ru not_active IP Right Cessation
- 2002-11-01 JP JP2003548252A patent/JP2005510864A/ja not_active Abandoned
- 2002-11-01 EP EP02803936A patent/EP1449217A1/en not_active Withdrawn
- 2002-11-01 CN CNA028239601A patent/CN1599936A/zh active Pending
- 2002-11-01 CA CA002468615A patent/CA2468615C/en not_active Expired - Fee Related
- 2002-11-01 AU AU2002365533A patent/AU2002365533A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
AU2002365533A1 (en) | 2003-06-10 |
NO20015837A (no) | 2003-05-12 |
CN1599936A (zh) | 2005-03-23 |
JP2005510864A (ja) | 2005-04-21 |
RU2004118416A (ru) | 2005-04-10 |
KR100543076B1 (ko) | 2006-01-20 |
RU2261499C2 (ru) | 2005-09-27 |
WO2003046921A1 (en) | 2003-06-05 |
CA2468615C (en) | 2007-03-20 |
CA2468615A1 (en) | 2003-06-05 |
KR20040064290A (ko) | 2004-07-16 |
EP1449217A1 (en) | 2004-08-25 |
NO314738B1 (no) | 2003-05-12 |
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