CN1183598C - 基于调整阴极导电率的超高密度信息存储器 - Google Patents

基于调整阴极导电率的超高密度信息存储器 Download PDF

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Publication number
CN1183598C
CN1183598C CNB01132516XA CN01132516A CN1183598C CN 1183598 C CN1183598 C CN 1183598C CN B01132516X A CNB01132516X A CN B01132516XA CN 01132516 A CN01132516 A CN 01132516A CN 1183598 C CN1183598 C CN 1183598C
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China
Prior art keywords
electrodes
cathode
conductive medium
current
energy beam
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Expired - Fee Related
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CNB01132516XA
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English (en)
Chinese (zh)
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CN1340861A (zh
Inventor
G·A·吉布森
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HP Inc
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Hewlett Packard Co
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Publication of CN1340861A publication Critical patent/CN1340861A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/08—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electrostatic charge injection; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/002—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by perturbation of the physical or electrical structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/08—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by electric charge or by variation of electric resistance or capacitance

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  • Semiconductor Memories (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
CNB01132516XA 2000-08-31 2001-08-31 基于调整阴极导电率的超高密度信息存储器 Expired - Fee Related CN1183598C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/652,777 US6473388B1 (en) 2000-08-31 2000-08-31 Ultra-high density information storage device based on modulated cathodoconductivity
US09/652777 2000-08-31
US09/652,777 2000-08-31

Publications (2)

Publication Number Publication Date
CN1340861A CN1340861A (zh) 2002-03-20
CN1183598C true CN1183598C (zh) 2005-01-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB01132516XA Expired - Fee Related CN1183598C (zh) 2000-08-31 2001-08-31 基于调整阴极导电率的超高密度信息存储器

Country Status (4)

Country Link
US (1) US6473388B1 (https=)
EP (1) EP1187123A3 (https=)
JP (1) JP3801468B2 (https=)
CN (1) CN1183598C (https=)

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JP3716467B2 (ja) * 1995-07-19 2005-11-16 ソニー株式会社 記録媒体並びに情報再生装置、情報記録装置及び情報記録再生装置
US6735163B2 (en) * 2001-03-02 2004-05-11 Hewlett-Packard Development Company, L.P. Ultra-high density storage device with resonant scanning micromover
JP3474863B2 (ja) * 2001-03-29 2003-12-08 株式会社東芝 電界放出型電子源の製造方法とマトリックス型電子源アレイ基板の製造方法
US6643248B2 (en) * 2001-04-16 2003-11-04 Hewlett-Packard Development Company, L.P. Data storage device
US6970413B2 (en) * 2001-05-25 2005-11-29 Hewlett-Packard Development Company, L.P. Data storage medium utilizing directed light beam and near-field optical sources
US7082095B2 (en) * 2001-05-25 2006-07-25 Hewlett-Packard Development Company, L.P. System and method for storing data
US6975575B2 (en) * 2001-10-31 2005-12-13 Hewlett-Packard Development Company, L.P. Data storage media and methods utilizing a layer adjacent the storage layer
KR100429843B1 (ko) * 2001-09-22 2004-05-03 삼성전자주식회사 전자 방출 및 상변화물질을 이용한 고밀도정보기록/재생방법 및 이를 응용한 정보저장장치 및 이에사용되는 미디어
NO20015509D0 (no) * 2001-11-09 2001-11-09 Hans Gude Gudesen Elektrodeanordning, fremgangsmåte til dets fremstilling, apparat omfattende elektrodeanordningene, samt bruk av sistnevnte
US6833593B2 (en) 2001-11-09 2004-12-21 Thin Film Electronics Asa Electrode means, a method for its manufacture, an apparatus comprising the electrode means as well as use of the latter
NO316632B1 (no) * 2001-11-16 2004-03-15 Thin Film Electronics Asa Matriseadresserbart optoelektronisk apparat og elektrodeanordning i samme
NO20015837A (no) * 2001-11-29 2003-05-12 Hans Gude Gudesen Fremgangsmåte til fremstilling av selvregistrerende ikke-litografiske transistorer med ultrakorte kanallengder
NO314736B1 (no) * 2001-12-10 2003-05-12 Hans Gude Gudesen Matriseadresserbar gruppe av integrerte transistor/minnestrukturer
NO315884B1 (no) * 2001-12-14 2003-11-03 Hans Gude Gudesen Fremgangsmåte til fremstilling av elektroder med höyt sideforhold
US7027380B2 (en) * 2002-05-02 2006-04-11 Hewlett-Packard Development Company, L.P. Atomic resolution storage device
US7280456B2 (en) * 2003-07-28 2007-10-09 Intel Corporation Methods and apparatus for determining the state of a variable resistive layer in a material stack
US7085151B2 (en) * 2004-01-13 2006-08-01 Hewlett-Packard Development Company, L.P. Storage device having a resistance measurement system
US20050185568A1 (en) * 2004-02-23 2005-08-25 Davidson Robert J. Storage device
US20060233091A1 (en) * 2005-04-01 2006-10-19 Schut David M Storage device having storage cells having a size less than a write light wavelength
EP2630196B1 (en) 2010-10-20 2017-09-06 Li-Cor, Inc. Cyanine dyes and their conjugates
CN105845590B (zh) * 2015-01-13 2019-12-10 中芯国际集成电路制造(上海)有限公司 一种检测金属缺陷的方法

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US3329962A (en) * 1963-06-10 1967-07-04 Burroughs Corp Solid state electron transducer apparatus
US3403284A (en) * 1966-12-29 1968-09-24 Bell Telephone Labor Inc Target structure storage device using diode array
US3530441A (en) * 1969-01-15 1970-09-22 Energy Conversion Devices Inc Method and apparatus for storing and retrieving information
FR2052345A5 (https=) * 1969-06-02 1971-04-09 Ibm
US3872318A (en) * 1971-04-08 1975-03-18 Kureha Chemical Ind Co Ltd Pyroelectric element of polymer film
GB1513141A (en) * 1975-03-18 1978-06-07 Arthur B Method of producing single crystalline self-supporting targets for photon and electron sensitive devices
DE3581522D1 (de) * 1984-12-28 1991-02-28 Toshiba Kawasaki Kk Auswechselbares speichersystem.
JPS6318541A (ja) * 1986-07-11 1988-01-26 Hitachi Ltd 電子線記録再生方法及びその装置
US4888758A (en) * 1987-11-23 1989-12-19 Scruggs David M Data storage using amorphous metallic storage medium
US5270995A (en) * 1989-01-13 1993-12-14 Sharp Kabushiki Kaisha Method for recording and reproducing information by varying a work function of a recording medium and device for the same
US5557596A (en) 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
US6087674A (en) * 1996-10-28 2000-07-11 Energy Conversion Devices, Inc. Memory element with memory material comprising phase-change material and dielectric material
DE19824592C2 (de) * 1998-06-02 2001-12-06 Reinecke Karin Verfahren und Vorrichtung zur permanenten Datenspeicherung

Also Published As

Publication number Publication date
EP1187123A3 (en) 2003-03-26
EP1187123A2 (en) 2002-03-13
CN1340861A (zh) 2002-03-20
JP2002109794A (ja) 2002-04-12
JP3801468B2 (ja) 2006-07-26
US6473388B1 (en) 2002-10-29

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