JP2003204020A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2003204020A
JP2003204020A JP2002000174A JP2002000174A JP2003204020A JP 2003204020 A JP2003204020 A JP 2003204020A JP 2002000174 A JP2002000174 A JP 2002000174A JP 2002000174 A JP2002000174 A JP 2002000174A JP 2003204020 A JP2003204020 A JP 2003204020A
Authority
JP
Japan
Prior art keywords
solder
semiconductor device
thickness
back surface
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002000174A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003204020A5 (enrdf_load_stackoverflow
Inventor
Hiroshi Nishibori
弘 西堀
Toshiaki Shinohara
利彰 篠原
Yasumi Kamigai
康己 上貝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002000174A priority Critical patent/JP2003204020A/ja
Publication of JP2003204020A publication Critical patent/JP2003204020A/ja
Publication of JP2003204020A5 publication Critical patent/JP2003204020A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
JP2002000174A 2002-01-04 2002-01-04 半導体装置 Pending JP2003204020A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002000174A JP2003204020A (ja) 2002-01-04 2002-01-04 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002000174A JP2003204020A (ja) 2002-01-04 2002-01-04 半導体装置

Publications (2)

Publication Number Publication Date
JP2003204020A true JP2003204020A (ja) 2003-07-18
JP2003204020A5 JP2003204020A5 (enrdf_load_stackoverflow) 2005-04-28

Family

ID=27640646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002000174A Pending JP2003204020A (ja) 2002-01-04 2002-01-04 半導体装置

Country Status (1)

Country Link
JP (1) JP2003204020A (enrdf_load_stackoverflow)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006202884A (ja) * 2005-01-19 2006-08-03 Fuji Electric Device Technology Co Ltd 半導体装置およびその製造方法
JP2006282417A (ja) * 2005-03-31 2006-10-19 Dowa Mining Co Ltd 金属−セラミックス接合基板
JP2006286897A (ja) * 2005-03-31 2006-10-19 Dowa Mining Co Ltd 金属−セラミックス接合基板
JP2006332084A (ja) * 2005-05-23 2006-12-07 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法、および半導体装置
WO2007032486A1 (ja) * 2005-09-15 2007-03-22 Mitsubishi Materials Corporation 絶縁回路基板および冷却シンク部付き絶縁回路基板
JP2007081201A (ja) * 2005-09-15 2007-03-29 Mitsubishi Materials Corp 絶縁回路基板および冷却シンク部付き絶縁回路基板
JP2007081202A (ja) * 2005-09-15 2007-03-29 Mitsubishi Materials Corp 絶縁回路基板および冷却シンク部付き絶縁回路基板
WO2007105361A1 (ja) * 2006-03-08 2007-09-20 Kabushiki Kaisha Toshiba 電子部品モジュール
JP2008124416A (ja) * 2006-03-31 2008-05-29 Hitachi Metals Ltd セラミックス回路基板およびこれを用いた半導体モジュール
JP2010283168A (ja) * 2009-06-04 2010-12-16 Honda Motor Co Ltd 半導体装置
EP2265099A1 (en) * 2009-06-04 2010-12-22 Honda Motor Co., Ltd. Semiconductor device and method of manufacturing the same
JP2011199315A (ja) * 2011-06-17 2011-10-06 Dowa Holdings Co Ltd 金属−セラミックス接合基板
JP2014030053A (ja) * 2013-10-11 2014-02-13 Honda Motor Co Ltd 半導体装置における絶縁基板及び金属板の板厚設定方法
WO2014148478A1 (ja) * 2013-03-18 2014-09-25 株式会社フジクラ 積層構造体および半導体装置
KR20230166143A (ko) * 2021-04-28 2023-12-06 센주긴조쿠고교 가부시키가이샤 적층 접합 재료, 반도체 패키지 및 파워 모듈

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006202884A (ja) * 2005-01-19 2006-08-03 Fuji Electric Device Technology Co Ltd 半導体装置およびその製造方法
JP2006282417A (ja) * 2005-03-31 2006-10-19 Dowa Mining Co Ltd 金属−セラミックス接合基板
JP2006286897A (ja) * 2005-03-31 2006-10-19 Dowa Mining Co Ltd 金属−セラミックス接合基板
JP2006332084A (ja) * 2005-05-23 2006-12-07 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法、および半導体装置
WO2007032486A1 (ja) * 2005-09-15 2007-03-22 Mitsubishi Materials Corporation 絶縁回路基板および冷却シンク部付き絶縁回路基板
JP2007081201A (ja) * 2005-09-15 2007-03-29 Mitsubishi Materials Corp 絶縁回路基板および冷却シンク部付き絶縁回路基板
JP2007081202A (ja) * 2005-09-15 2007-03-29 Mitsubishi Materials Corp 絶縁回路基板および冷却シンク部付き絶縁回路基板
US8273993B2 (en) 2006-03-08 2012-09-25 Kabushiki Kaisha Toshiba Electronic component module
WO2007105361A1 (ja) * 2006-03-08 2007-09-20 Kabushiki Kaisha Toshiba 電子部品モジュール
JPWO2007105361A1 (ja) * 2006-03-08 2009-07-30 株式会社東芝 電子部品モジュール
US9214617B2 (en) 2006-03-08 2015-12-15 Kabushiki Kaisha Toshiba Electronic component module
JP2008124416A (ja) * 2006-03-31 2008-05-29 Hitachi Metals Ltd セラミックス回路基板およびこれを用いた半導体モジュール
JP2010283168A (ja) * 2009-06-04 2010-12-16 Honda Motor Co Ltd 半導体装置
US8415801B2 (en) 2009-06-04 2013-04-09 Honda Motor Co., Ltd. Semiconductor device having thermal endurance and method of manufacturing the same
EP2265099A1 (en) * 2009-06-04 2010-12-22 Honda Motor Co., Ltd. Semiconductor device and method of manufacturing the same
JP2011199315A (ja) * 2011-06-17 2011-10-06 Dowa Holdings Co Ltd 金属−セラミックス接合基板
WO2014148478A1 (ja) * 2013-03-18 2014-09-25 株式会社フジクラ 積層構造体および半導体装置
JP2014183128A (ja) * 2013-03-18 2014-09-29 Fujikura Ltd 積層構造体および半導体装置
JP2014030053A (ja) * 2013-10-11 2014-02-13 Honda Motor Co Ltd 半導体装置における絶縁基板及び金属板の板厚設定方法
KR20230166143A (ko) * 2021-04-28 2023-12-06 센주긴조쿠고교 가부시키가이샤 적층 접합 재료, 반도체 패키지 및 파워 모듈
US12080671B2 (en) 2021-04-28 2024-09-03 Senju Metal Industry Co., Ltd. Layered bonding material, semiconductor package, and power module
KR102759830B1 (ko) * 2021-04-28 2025-02-04 센주긴조쿠고교 가부시키가이샤 적층 접합 재료, 반도체 패키지 및 파워 모듈

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