JP2003168744A5 - - Google Patents

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Publication number

JP2003168744A5

JP2003168744A5 JP2001369449A JP2001369449A JP2003168744A5 JP 2003168744 A5 JP2003168744 A5 JP 2003168744A5 JP 2001369449 A JP2001369449 A JP 2001369449A JP 2001369449 A JP2001369449 A JP 2001369449A JP 2003168744 A5 JP2003168744 A5 JP 2003168744A5

Authority

JP

Japan

Prior art keywords

film

forming

tantalum pentoxide

integrated circuit

semiconductor integrated

Prior art date

2001-12-04

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

• Espacenet
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• BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 16
• PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims 16
• 239000004065 semiconductor Substances 0.000 claims 14
• 238000004519 manufacturing process Methods 0.000 claims 12
• 239000013078 crystal Substances 0.000 claims 8
• 230000001590 oxidative effect Effects 0.000 claims 7
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
• 239000003990 capacitor Substances 0.000 claims 6
• 229910052710 silicon Inorganic materials 0.000 claims 6
• 239000010703 silicon Substances 0.000 claims 6
• 229910052581 Si3N4 Inorganic materials 0.000 claims 5
• 238000000034 method Methods 0.000 claims 5
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 5
• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
• 238000002425 crystallisation Methods 0.000 claims 3
• 230000008025 crystallization Effects 0.000 claims 3
• 238000010438 heat treatment Methods 0.000 claims 3
• 238000005121 nitriding Methods 0.000 claims 3
• 229910052760 oxygen Inorganic materials 0.000 claims 3
• 238000003860 storage Methods 0.000 claims 3
• OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
• 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
• 238000000151 deposition Methods 0.000 claims 2
• 239000007789 gas Substances 0.000 claims 2
• 229910052698 phosphorus Inorganic materials 0.000 claims 2
• 239000011574 phosphorus Substances 0.000 claims 2
• 229910052715 tantalum Inorganic materials 0.000 claims 2
• GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
• 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
• NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
• 238000000277 atomic layer chemical vapour deposition Methods 0.000 claims 1
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
• 239000001301 oxygen Substances 0.000 claims 1