JP2003160398A - Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置 - Google Patents

Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置

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Publication number
JP2003160398A
JP2003160398A JP2001355720A JP2001355720A JP2003160398A JP 2003160398 A JP2003160398 A JP 2003160398A JP 2001355720 A JP2001355720 A JP 2001355720A JP 2001355720 A JP2001355720 A JP 2001355720A JP 2003160398 A JP2003160398 A JP 2003160398A
Authority
JP
Japan
Prior art keywords
group iii
container
metal
substance containing
nitride crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001355720A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003160398A5 (enExample
Inventor
Shoji Sarayama
正二 皿山
Hirokazu Iwata
浩和 岩田
Hisanori Yamane
久典 山根
Masahiko Shimada
昌彦 島田
Takashi Araki
隆司 新木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP2001355720A priority Critical patent/JP2003160398A/ja
Priority to US10/134,895 priority patent/US7001457B2/en
Publication of JP2003160398A publication Critical patent/JP2003160398A/ja
Priority to US11/302,128 priority patent/US7531038B2/en
Publication of JP2003160398A5 publication Critical patent/JP2003160398A5/ja
Priority to US12/353,608 priority patent/US8623138B2/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
JP2001355720A 2001-05-01 2001-11-21 Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置 Pending JP2003160398A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001355720A JP2003160398A (ja) 2001-11-21 2001-11-21 Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置
US10/134,895 US7001457B2 (en) 2001-05-01 2002-04-30 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US11/302,128 US7531038B2 (en) 2001-05-01 2005-12-14 Crystal growth method
US12/353,608 US8623138B2 (en) 2001-05-01 2009-01-14 Crystal growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001355720A JP2003160398A (ja) 2001-11-21 2001-11-21 Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置

Publications (2)

Publication Number Publication Date
JP2003160398A true JP2003160398A (ja) 2003-06-03
JP2003160398A5 JP2003160398A5 (enExample) 2006-06-22

Family

ID=19167381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001355720A Pending JP2003160398A (ja) 2001-05-01 2001-11-21 Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置

Country Status (1)

Country Link
JP (1) JP2003160398A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010083706A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体結晶の製造方法および製造装置
JP2012140282A (ja) * 2010-12-28 2012-07-26 Ihi Corp 結晶成長装置
US8323404B2 (en) 2005-11-21 2012-12-04 Ricoh Company, Ltd. Group III nitride crystal and manufacturing method thereof
US8337617B2 (en) 2005-03-14 2012-12-25 Ricoh Company, Ltd. Manufacturing method and manufacturing apparatus of a group III nitride crystal
US8475593B2 (en) 2006-03-14 2013-07-02 Ricoh Company, Ltd. Crystal preparing device, crystal preparing method, and crystal
US8888912B2 (en) 2005-05-12 2014-11-18 Ricoh Company, Ltd. Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8337617B2 (en) 2005-03-14 2012-12-25 Ricoh Company, Ltd. Manufacturing method and manufacturing apparatus of a group III nitride crystal
US9376763B2 (en) 2005-03-14 2016-06-28 Ricoh Company, Ltd. Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogen
US8888912B2 (en) 2005-05-12 2014-11-18 Ricoh Company, Ltd. Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal
US8323404B2 (en) 2005-11-21 2012-12-04 Ricoh Company, Ltd. Group III nitride crystal and manufacturing method thereof
US9365948B2 (en) 2005-11-21 2016-06-14 Ricoh Company, Ltd Group III nitride crystal and manufacturing method thereof
US8475593B2 (en) 2006-03-14 2013-07-02 Ricoh Company, Ltd. Crystal preparing device, crystal preparing method, and crystal
JP2010083706A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体結晶の製造方法および製造装置
JP2012140282A (ja) * 2010-12-28 2012-07-26 Ihi Corp 結晶成長装置

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