JP2003160398A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003160398A5 JP2003160398A5 JP2001355720A JP2001355720A JP2003160398A5 JP 2003160398 A5 JP2003160398 A5 JP 2003160398A5 JP 2001355720 A JP2001355720 A JP 2001355720A JP 2001355720 A JP2001355720 A JP 2001355720A JP 2003160398 A5 JP2003160398 A5 JP 2003160398A5
- Authority
- JP
- Japan
- Prior art keywords
- group iii
- substance containing
- metal
- container
- nitride crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 description 30
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 239000013078 crystal Substances 0.000 description 23
- 150000004767 nitrides Chemical class 0.000 description 19
- 239000002994 raw material Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001355720A JP2003160398A (ja) | 2001-11-21 | 2001-11-21 | Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置 |
| US10/134,895 US7001457B2 (en) | 2001-05-01 | 2002-04-30 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
| US11/302,128 US7531038B2 (en) | 2001-05-01 | 2005-12-14 | Crystal growth method |
| US12/353,608 US8623138B2 (en) | 2001-05-01 | 2009-01-14 | Crystal growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001355720A JP2003160398A (ja) | 2001-11-21 | 2001-11-21 | Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003160398A JP2003160398A (ja) | 2003-06-03 |
| JP2003160398A5 true JP2003160398A5 (enExample) | 2006-06-22 |
Family
ID=19167381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001355720A Pending JP2003160398A (ja) | 2001-05-01 | 2001-11-21 | Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003160398A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4603498B2 (ja) | 2005-03-14 | 2010-12-22 | 株式会社リコー | Ｉｉｉ族窒化物結晶の製造方法及び製造装置 |
| TW200706710A (en) | 2005-05-12 | 2007-02-16 | Ricoh Co Ltd | Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal |
| JP4856934B2 (ja) | 2005-11-21 | 2012-01-18 | 株式会社リコー | ＧａＮ結晶 |
| US20070215034A1 (en) | 2006-03-14 | 2007-09-20 | Hirokazu Iwata | Crystal preparing device, crystal preparing method, and crystal |
| JP5003642B2 (ja) * | 2008-09-30 | 2012-08-15 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体結晶の製造装置 |
| JP5582028B2 (ja) * | 2010-12-28 | 2014-09-03 | 株式会社Ｉｈｉ | 結晶成長装置 |
-
2001
- 2001-11-21 JP JP2001355720A patent/JP2003160398A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003313098A5 (enExample) | ||
| US8623138B2 (en) | Crystal growth apparatus | |
| JP4189423B2 (ja) | 化合物単結晶の製造方法、およびそれに用いる製造装置 | |
| JP2001058900A5 (enExample) | ||
| JP2005263622A (ja) | 化合物単結晶の製造方法、およびそれに用いる製造装置 | |
| JP2001064098A5 (enExample) | ||
| JP4056785B2 (ja) | Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶の製造装置 | |
| EP1538241A3 (en) | Group III nitride crystal, method of its manufacturing, and equipment for manufacturing group III nitride crystal | |
| WO2004083498A1 (ja) | Iii族元素窒化物単結晶の製造方法およびそれに用いる装置 | |
| JP2002326898A5 (enExample) | ||
| JP2008222519A (ja) | Ｉｉｉ族元素窒化物結晶の製造方法およびｉｉｉ族元素窒化物結晶 | |
| US7462238B2 (en) | Crystal growth apparatus and method of producing a crystal | |
| JP2003160398A5 (enExample) | ||
| JP2021066633A (ja) | ガリウム前駆体の製造方法およびこれを用いた積層体の製造方法 | |
| JP2003012400A5 (enExample) | ||
| EP2135979B1 (en) | Method for manufacturing nitride single crystal | |
| JPH11171699A (ja) | ＧａＮＰ単結晶成長方法 | |
| JP2003206198A (ja) | Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置 | |
| JP4381638B2 (ja) | Ｉｉｉ族窒化物結晶の結晶製造方法 | |
| CA2608102A1 (en) | Method of producing group iii nitride crystal, apparatus for producing group iii nitride crystal, and group iii nitride crystal | |
| JP2003286099A (ja) | Ｉｉｉ族窒化物結晶成長装置およびｉｉｉ族窒化物結晶成長方法 | |
| JP2009126771A (ja) | 結晶成長方法、および結晶成長装置 | |
| KR100564265B1 (ko) | 알루미늄 갈륨 나이트라이드 결정 성장용 수소화물 기상박막 성장 장치 및 방법 | |
| JP4554448B2 (ja) | Ｉｉｉ族窒化物結晶製造方法及びｉｉｉ族窒化物結晶製造装置 | |
| KR20140096113A (ko) | 반도체 결정 물질의 형성에 사용하기 위한 시스템 |