JP2003158295A - ＧａＮ系半導体薄膜、その製造方法、半導体発光素子 - Google Patents

ＧａＮ系半導体薄膜、その製造方法、半導体発光素子

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Publication number
JP2003158295A
JP2003158295A JP2001356801A JP2001356801A JP2003158295A JP 2003158295 A JP2003158295 A JP 2003158295A JP 2001356801 A JP2001356801 A JP 2001356801A JP 2001356801 A JP2001356801 A JP 2001356801A JP 2003158295 A JP2003158295 A JP 2003158295A
Authority
JP
Japan
Prior art keywords
gan
based semiconductor
thin film
semiconductor thin
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001356801A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003158295A5 (cg-RX-API-DMAC10.html
Inventor
Yasuhito Urashima
泰人 浦島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP2001356801A priority Critical patent/JP2003158295A/ja
Publication of JP2003158295A publication Critical patent/JP2003158295A/ja
Publication of JP2003158295A5 publication Critical patent/JP2003158295A5/ja
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Led Devices (AREA)
JP2001356801A 2001-11-22 2001-11-22 ＧａＮ系半導体薄膜、その製造方法、半導体発光素子 Pending JP2003158295A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001356801A JP2003158295A (ja) 2001-11-22 2001-11-22 ＧａＮ系半導体薄膜、その製造方法、半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001356801A JP2003158295A (ja) 2001-11-22 2001-11-22 ＧａＮ系半導体薄膜、その製造方法、半導体発光素子

Publications (2)

Publication Number Publication Date
JP2003158295A true JP2003158295A (ja) 2003-05-30
JP2003158295A5 JP2003158295A5 (cg-RX-API-DMAC10.html) 2005-07-07

Family

ID=19168255

Family Applications (1)

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JP2001356801A Pending JP2003158295A (ja) 2001-11-22 2001-11-22 ＧａＮ系半導体薄膜、その製造方法、半導体発光素子

Country Status (1)

Country Link
JP (1) JP2003158295A (cg-RX-API-DMAC10.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006080708A1 (en) * 2004-10-06 2006-08-03 Epivalley Co., Ltd. Iii-nitride semiconductor light emitting device and method for manufacturing the same
JPWO2005043633A1 (ja) * 2003-11-04 2007-05-10 パイオニア株式会社 半導体発光素子及びその製造方法
US7704860B2 (en) 2004-11-22 2010-04-27 Panasonic Corporation Nitride-based semiconductor device and method for fabricating the same
JPWO2020213388A1 (cg-RX-API-DMAC10.html) * 2019-04-19 2020-10-22

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2005043633A1 (ja) * 2003-11-04 2007-05-10 パイオニア株式会社 半導体発光素子及びその製造方法
EP1681727A4 (en) * 2003-11-04 2009-12-16 Pioneer Corp SEMICONDUCTOR LIGHT EMISSION ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
JP4588638B2 (ja) * 2003-11-04 2010-12-01 パイオニア株式会社 半導体発光素子及びその製造方法
WO2006080708A1 (en) * 2004-10-06 2006-08-03 Epivalley Co., Ltd. Iii-nitride semiconductor light emitting device and method for manufacturing the same
US7704860B2 (en) 2004-11-22 2010-04-27 Panasonic Corporation Nitride-based semiconductor device and method for fabricating the same
JPWO2020213388A1 (cg-RX-API-DMAC10.html) * 2019-04-19 2020-10-22
WO2020213388A1 (ja) * 2019-04-19 2020-10-22 ソニー株式会社 化合物半導体層積層体及びその形成方法、並びに、発光デバイス
EP3958333A4 (en) * 2019-04-19 2022-06-08 Sony Group Corporation COMPOUND SEMICONDUCTOR LAYER LAMINATE AND METHOD FOR PRODUCTION THEREOF, AND LIGHT-EMITTING DEVICE
US20220190555A1 (en) * 2019-04-19 2022-06-16 Sony Group Corporation Compound semiconductor layer stack, method of forming the same, and light-emitting device
JP7548219B2 (ja) 2019-04-19 2024-09-10 ソニーグループ株式会社 化合物半導体層積層体及びその形成方法、並びに、発光デバイス

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