JP2003142662A - オフセットされた導体を含むｍｒａｍデバイス - Google Patents

オフセットされた導体を含むｍｒａｍデバイス

Info

Publication number
JP2003142662A
JP2003142662A JP2002224583A JP2002224583A JP2003142662A JP 2003142662 A JP2003142662 A JP 2003142662A JP 2002224583 A JP2002224583 A JP 2002224583A JP 2002224583 A JP2002224583 A JP 2002224583A JP 2003142662 A JP2003142662 A JP 2003142662A
Authority
JP
Japan
Prior art keywords
memory cell
conductor
word line
memory
mram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002224583A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003142662A5 (cg-RX-API-DMAC7.html
Inventor
Manish Sharma
マニシュ・シャーマ
Manoj Bhattacharyya
マノイ・バータッチャヤ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2003142662A publication Critical patent/JP2003142662A/ja
Publication of JP2003142662A5 publication Critical patent/JP2003142662A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
JP2002224583A 2001-08-01 2002-08-01 オフセットされた導体を含むｍｒａｍデバイス Pending JP2003142662A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/920225 2001-08-01
US09/920,225 US6385083B1 (en) 2001-08-01 2001-08-01 MRAM device including offset conductors

Publications (2)

Publication Number Publication Date
JP2003142662A true JP2003142662A (ja) 2003-05-16
JP2003142662A5 JP2003142662A5 (cg-RX-API-DMAC7.html) 2005-10-27

Family

ID=25443380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002224583A Pending JP2003142662A (ja) 2001-08-01 2002-08-01 オフセットされた導体を含むｍｒａｍデバイス

Country Status (6)

Country Link
US (1) US6385083B1 (cg-RX-API-DMAC7.html)
EP (1) EP1282132A3 (cg-RX-API-DMAC7.html)
JP (1) JP2003142662A (cg-RX-API-DMAC7.html)
KR (1) KR100898040B1 (cg-RX-API-DMAC7.html)
CN (1) CN1308959C (cg-RX-API-DMAC7.html)
TW (1) TW563127B (cg-RX-API-DMAC7.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6735111B2 (en) * 2002-01-16 2004-05-11 Micron Technology, Inc. Magnetoresistive memory devices and assemblies
JP2003346474A (ja) * 2002-03-19 2003-12-05 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6507513B1 (en) * 2002-06-20 2003-01-14 Hewlett-Packard Company Using delayed electrical pulses with magneto-resistive devices
KR20050085158A (ko) * 2002-11-28 2005-08-29 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 자기 저항 메모리 셀 어레이, 그의 기록 방법과 제조 방법및 비휘발성 메모리
ES2406304T3 (es) * 2002-11-28 2013-06-06 Crocus Technology, Inc. Procedimiento y dispositivo para la generación mejorada de campos magnéticos durante una operación de escritura de un dispositivo de memoria magnetorresistente
US6836429B2 (en) * 2002-12-07 2004-12-28 Hewlett-Packard Development Company, L.P. MRAM having two write conductors
US7126200B2 (en) * 2003-02-18 2006-10-24 Micron Technology, Inc. Integrated circuits with contemporaneously formed array electrodes and logic interconnects
JP4315703B2 (ja) * 2003-02-27 2009-08-19 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
US6952364B2 (en) * 2003-03-03 2005-10-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction structures and methods of fabrication
KR100615600B1 (ko) * 2004-08-09 2006-08-25 삼성전자주식회사 고집적 자기램 소자 및 그 제조방법
KR100615089B1 (ko) * 2004-07-14 2006-08-23 삼성전자주식회사 낮은 구동 전류를 갖는 자기 램
US7372722B2 (en) * 2003-09-29 2008-05-13 Samsung Electronics Co., Ltd. Methods of operating magnetic random access memory devices including heat-generating structures
KR100568512B1 (ko) * 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
US7369428B2 (en) * 2003-09-29 2008-05-06 Samsung Electronics Co., Ltd. Methods of operating a magnetic random access memory device and related devices and structures
KR100835275B1 (ko) * 2004-08-12 2008-06-05 삼성전자주식회사 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들
US6987692B2 (en) * 2003-10-03 2006-01-17 Hewlett-Packard Development Company, L.P. Magnetic memory having angled third conductor
US7327591B2 (en) * 2004-06-17 2008-02-05 Texas Instruments Incorporated Staggered memory cell array
KR100660539B1 (ko) * 2004-07-29 2006-12-22 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
KR100612878B1 (ko) * 2004-12-03 2006-08-14 삼성전자주식회사 자기 메모리 소자와 그 제조 및 동작방법
EP1667160B1 (en) * 2004-12-03 2011-11-23 Samsung Electronics Co., Ltd. Magnetic memory device and method
CN100509006C (zh) * 2005-03-25 2009-07-08 北京欧纳尔生物工程技术有限公司 治疗抑郁症的药物组合物及其制法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069815A (en) * 1997-12-18 2000-05-30 Siemens Aktiengesellschaft Semiconductor memory having hierarchical bit line and/or word line architecture
JP2000076843A (ja) * 1998-05-18 2000-03-14 Canon Inc 磁性薄膜メモリ素子およびその記録再生方法、画像録画再生装置
EP0959475A3 (en) * 1998-05-18 2000-11-08 Canon Kabushiki Kaisha Magnetic thin film memory and recording and reproducing method and apparatus using such a memory
US6034887A (en) * 1998-08-05 2000-03-07 International Business Machines Corporation Non-volatile magnetic memory cell and devices
US6873546B2 (en) * 2000-03-09 2005-03-29 Richard M. Lienau Method and apparatus for reading data from a ferromagnetic memory cell
US6236590B1 (en) * 2000-07-21 2001-05-22 Hewlett-Packard Company Optimal write conductors layout for improved performance in MRAM
JP3854793B2 (ja) * 2000-10-03 2006-12-06 キヤノン株式会社 磁気抵抗効果素子を用いたメモリ

Also Published As

Publication number Publication date
KR100898040B1 (ko) 2009-05-19
US6385083B1 (en) 2002-05-07
EP1282132A2 (en) 2003-02-05
EP1282132A3 (en) 2003-12-10
CN1400607A (zh) 2003-03-05
KR20030014582A (ko) 2003-02-19
TW563127B (en) 2003-11-21
CN1308959C (zh) 2007-04-04

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