JP2003133417A5 - - Google Patents

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Publication number
JP2003133417A5
JP2003133417A5 JP2001329582A JP2001329582A JP2003133417A5 JP 2003133417 A5 JP2003133417 A5 JP 2003133417A5 JP 2001329582 A JP2001329582 A JP 2001329582A JP 2001329582 A JP2001329582 A JP 2001329582A JP 2003133417 A5 JP2003133417 A5 JP 2003133417A5
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JP
Japan
Prior art keywords
showing
sram
semiconductor integrated
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001329582A
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English (en)
Japanese (ja)
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JP2003133417A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001329582A priority Critical patent/JP2003133417A/ja
Priority claimed from JP2001329582A external-priority patent/JP2003133417A/ja
Priority to US10/252,563 priority patent/US6791128B1/en
Publication of JP2003133417A publication Critical patent/JP2003133417A/ja
Priority to US10/935,094 priority patent/US7356795B2/en
Publication of JP2003133417A5 publication Critical patent/JP2003133417A5/ja
Priority to US11/980,589 priority patent/US20080074913A1/en
Priority to US11/980,461 priority patent/US20080084726A1/en
Priority to US11/980,562 priority patent/US20080067552A1/en
Pending legal-status Critical Current

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JP2001329582A 2001-10-26 2001-10-26 半導体集積回路装置及びその設計方法 Pending JP2003133417A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001329582A JP2003133417A (ja) 2001-10-26 2001-10-26 半導体集積回路装置及びその設計方法
US10/252,563 US6791128B1 (en) 2001-10-26 2002-09-24 Semiconductor integrated circuit device and method for designing the same
US10/935,094 US7356795B2 (en) 2001-10-26 2004-09-08 Semiconductor integrated circuit device and method for designing the same
US11/980,589 US20080074913A1 (en) 2001-10-26 2007-10-31 Semiconductor integrated circuit device and method for designing the same
US11/980,461 US20080084726A1 (en) 2001-10-26 2007-10-31 Semiconductor integrated circuit device and method for designing the same
US11/980,562 US20080067552A1 (en) 2001-10-26 2007-10-31 Semiconductor integrated circuit device and method for desiging the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001329582A JP2003133417A (ja) 2001-10-26 2001-10-26 半導体集積回路装置及びその設計方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008297010A Division JP2009081455A (ja) 2008-11-20 2008-11-20 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JP2003133417A JP2003133417A (ja) 2003-05-09
JP2003133417A5 true JP2003133417A5 (enExample) 2005-04-07

Family

ID=19145464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001329582A Pending JP2003133417A (ja) 2001-10-26 2001-10-26 半導体集積回路装置及びその設計方法

Country Status (2)

Country Link
US (5) US6791128B1 (enExample)
JP (1) JP2003133417A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004317718A (ja) * 2003-04-15 2004-11-11 Toshiba Corp パターン作成方法、パターン作成システム、および半導体装置の製造方法
US7087943B2 (en) * 2003-05-08 2006-08-08 Intel Corporation Direct alignment scheme between multiple lithography layers
JP4397210B2 (ja) 2003-10-20 2010-01-13 ローム株式会社 半導体装置
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
JP4998970B2 (ja) * 2005-01-26 2012-08-15 ルネサスエレクトロニクス株式会社 スタティック半導体記憶装置
JP4309369B2 (ja) * 2005-03-30 2009-08-05 エルピーダメモリ株式会社 半導体装置
KR20070013557A (ko) * 2005-07-26 2007-01-31 삼성전자주식회사 마스크와, 이를 이용한 표시 기판의 제조 방법 및 표시기판
JP4949734B2 (ja) * 2006-05-17 2012-06-13 ルネサスエレクトロニクス株式会社 半導体装置及びその設計方法
JP5580981B2 (ja) * 2008-11-21 2014-08-27 ラピスセミコンダクタ株式会社 半導体素子及び半導体装置
US8359558B2 (en) 2010-03-16 2013-01-22 Synopsys, Inc. Modeling of cell delay change for electronic design automation
US9646958B2 (en) * 2010-03-17 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits including dummy structures and methods of forming the same
JP2012156229A (ja) * 2011-01-25 2012-08-16 Renesas Electronics Corp 半導体装置およびその製造方法
US8595682B2 (en) * 2011-12-19 2013-11-26 International Business Machines Corporation Phase compensation in a differential pair of transmission lines
JP2014157965A (ja) * 2013-02-18 2014-08-28 Renesas Electronics Corp 半導体装置
US11545495B2 (en) * 2017-06-29 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Preventing gate-to-contact bridging by reducing contact dimensions in FinFET SRAM
CN108549750A (zh) * 2018-03-28 2018-09-18 湖南融创微电子有限公司 大容量sram的布局布线方法
CN108710710B (zh) * 2018-08-09 2023-08-29 广东电网有限责任公司广州供电局 用于配电房快速换柜的方法及装置

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
SE358755B (enExample) * 1972-06-09 1973-08-06 Ericsson Telefon Ab L M
US4593383A (en) * 1983-11-02 1986-06-03 Raytheon Company Integated circuit memory
JPH04218944A (ja) 1990-06-04 1992-08-10 Ricoh Co Ltd 集積回路マスクのレイアウト方法および装置
US5264385A (en) * 1991-12-09 1993-11-23 Texas Instruments Incorporated SRAM design with no moat-to-moat spacing
KR950011636B1 (ko) * 1992-03-04 1995-10-07 금성일렉트론주식회사 개선된 레이아웃을 갖는 다이내믹 랜덤 액세스 메모리와 그것의 메모리셀 배치방법
JP3110262B2 (ja) * 1993-11-15 2000-11-20 松下電器産業株式会社 半導体装置及び半導体装置のオペレーティング方法
US5640342A (en) * 1995-11-20 1997-06-17 Micron Technology, Inc. Structure for cross coupled thin film transistors and static random access memory cell
JP3579205B2 (ja) * 1996-08-06 2004-10-20 株式会社ルネサステクノロジ 半導体記憶装置、半導体装置、データ処理装置及びコンピュータシステム
US5901103A (en) * 1997-04-07 1999-05-04 Motorola, Inc. Integrated circuit having standby control for memory and method thereof
US5932900A (en) 1997-06-20 1999-08-03 Faraday Technology Corporation Flexible cell for gate array
JP3351716B2 (ja) 1997-09-11 2002-12-03 株式会社東芝 半導体装置及びその製造方法
US6470489B1 (en) * 1997-09-17 2002-10-22 Numerical Technologies, Inc. Design rule checking system and method
JP4039532B2 (ja) * 1997-10-02 2008-01-30 株式会社ルネサステクノロジ 半導体集積回路装置
JP2000030441A (ja) * 1998-07-15 2000-01-28 Mitsubishi Electric Corp 半導体記憶装置及び半導体記憶装置のリフレッシュ方法
US6107108A (en) 1998-08-14 2000-08-22 Taiwan Semiconductor Manufacturing Company Dosage micro uniformity measurement in ion implantation
US6381166B1 (en) * 1998-09-28 2002-04-30 Texas Instruments Incorporated Semiconductor memory device having variable pitch array
JP2000114480A (ja) 1998-10-02 2000-04-21 Oki Electric Ind Co Ltd 半導体装置
JP3852729B2 (ja) * 1998-10-27 2006-12-06 富士通株式会社 半導体記憶装置
JP3209972B2 (ja) * 1999-01-14 2001-09-17 沖電気工業株式会社 半導体集積回路装置
JP3538108B2 (ja) 2000-03-14 2004-06-14 松下電器産業株式会社 半導体装置及びその製造方法
US7225423B2 (en) * 2000-06-30 2007-05-29 Zenasis Technologies, Inc. Method for automated design of integrated circuits with targeted quality objectives using dynamically generated building blocks
US6483739B2 (en) * 2000-12-31 2002-11-19 Texas Instruments Incorporated 4T memory with boost of stored voltage between standby and active

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