JP2003124441A - 耐故障性固体メモリ - Google Patents

耐故障性固体メモリ

Info

Publication number
JP2003124441A
JP2003124441A JP2002202557A JP2002202557A JP2003124441A JP 2003124441 A JP2003124441 A JP 2003124441A JP 2002202557 A JP2002202557 A JP 2002202557A JP 2002202557 A JP2002202557 A JP 2002202557A JP 2003124441 A JP2003124441 A JP 2003124441A
Authority
JP
Japan
Prior art keywords
address
memory
line
column
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002202557A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003124441A5 (cg-RX-API-DMAC7.html
Inventor
Josh N Hogan
ジョシュ・エヌ・ホーガン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2003124441A publication Critical patent/JP2003124441A/ja
Publication of JP2003124441A5 publication Critical patent/JP2003124441A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP2002202557A 2001-07-24 2002-07-11 耐故障性固体メモリ Withdrawn JP2003124441A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/911,968 US6744681B2 (en) 2001-07-24 2001-07-24 Fault-tolerant solid state memory
US09/911968 2001-07-24

Publications (2)

Publication Number Publication Date
JP2003124441A true JP2003124441A (ja) 2003-04-25
JP2003124441A5 JP2003124441A5 (cg-RX-API-DMAC7.html) 2005-10-27

Family

ID=25431188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002202557A Withdrawn JP2003124441A (ja) 2001-07-24 2002-07-11 耐故障性固体メモリ

Country Status (6)

Country Link
US (2) US6744681B2 (cg-RX-API-DMAC7.html)
EP (1) EP1288968A3 (cg-RX-API-DMAC7.html)
JP (1) JP2003124441A (cg-RX-API-DMAC7.html)
KR (1) KR20030011601A (cg-RX-API-DMAC7.html)
CN (1) CN1316505C (cg-RX-API-DMAC7.html)
TW (1) TW556208B (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007095940A (ja) * 2005-09-28 2007-04-12 Fujitsu Ltd 半導体記憶装置
JP2011096341A (ja) * 2009-11-02 2011-05-12 Toshiba Corp 不揮発性半導体記憶装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US7003713B2 (en) * 2002-05-16 2006-02-21 Broadcom Corporation Variable Hamming error correction for a one-time-programmable-ROM
US7898882B2 (en) * 2006-06-23 2011-03-01 Synopsys, Inc. Architecture, system and method for compressing repair data in an integrated circuit (IC) design
US7630246B2 (en) * 2007-06-18 2009-12-08 Micron Technology, Inc. Programming rate identification and control in a solid state memory
US7813157B2 (en) * 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US20090225621A1 (en) * 2008-03-05 2009-09-10 Shepard Daniel R Split decoder storage array and methods of forming the same
US20090296445A1 (en) * 2008-06-02 2009-12-03 Shepard Daniel R Diode decoder array with non-sequential layout and methods of forming the same
US8325556B2 (en) * 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689900A (en) * 1970-08-31 1972-09-05 Gen Electric Photo-coded diode array for read only memory
DE2050125A1 (de) * 1970-10-13 1972-04-20 Moeller J D Optik Verfahren zur Herstellung von elektrischen Sicherungselementen
US4389715A (en) * 1980-10-06 1983-06-21 Inmos Corporation Redundancy scheme for a dynamic RAM
US4489402A (en) * 1981-04-25 1984-12-18 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
JPS58125299A (ja) * 1982-01-19 1983-07-26 Toshiba Corp 冗長度を有するメモリ装置
US4751197A (en) * 1984-07-18 1988-06-14 Texas Instruments Incorporated Make-link programming of semiconductor devices using laser enhanced thermal breakdown of insulator
US4654830A (en) * 1984-11-27 1987-03-31 Monolithic Memories, Inc. Method and structure for disabling and replacing defective memory in a PROM
US4783732A (en) * 1985-12-12 1988-11-08 Itt Corporation Two-wire/three-port RAM for cellular array processor
US5166901A (en) * 1986-05-14 1992-11-24 Raytheon Company Programmable memory cell structure including a refractory metal barrier layer
GB8612454D0 (en) * 1986-05-22 1986-07-02 Inmos Ltd Redundancy scheme for multi-stage apparatus
US4868616A (en) * 1986-12-11 1989-09-19 Energy Conversion Devices, Inc. Amorphous electronic matrix array for liquid crystal display
US4988891A (en) * 1989-05-09 1991-01-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor neural network including photosensitive coupling elements
US5195010A (en) * 1990-01-23 1993-03-16 Thomson, S.A. Electrostatic discharge voltage protection circuit for a solid state instrument
US5241212A (en) * 1990-05-01 1993-08-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a redundant circuit portion and a manufacturing method of the same
US5412593A (en) * 1994-01-12 1995-05-02 Texas Instruments Incorporated Fuse and antifuse reprogrammable link for integrated circuits
US5625218A (en) * 1994-06-17 1997-04-29 Nippondenso Co., Ltd. Semiconductor device equipped with a heat-fusible thin film resistor and production method thereof
US5457649A (en) * 1994-08-26 1995-10-10 Microchip Technology, Inc. Semiconductor memory device and write-once, read-only semiconductor memory array using amorphous-silicon and method therefor
JPH0877776A (ja) * 1994-09-06 1996-03-22 Mitsubishi Electric Corp 半導体記憶装置
KR970001564U (ko) * 1995-06-21 1997-01-21 자동차용 후부차체의 보강구조
US5889694A (en) * 1996-03-05 1999-03-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US5798974A (en) * 1996-05-15 1998-08-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device realizing high speed access and low power consumption with redundant circuit
US5835396A (en) * 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
US5941997A (en) * 1996-11-26 1999-08-24 Play Incorporated Current-based contention detection and handling system
KR100258975B1 (ko) * 1996-12-10 2000-06-15 윤종용 반도체 메모리장치
US5877798A (en) * 1997-03-21 1999-03-02 Lexmark International Inc. Method and apparatus for automatically determining the style printhead installed in a laser printer
US6058052A (en) * 1997-08-21 2000-05-02 Cypress Semiconductor Corp. Redundancy scheme providing improvements in redundant circuit access time and integrated circuit layout area
JP2870530B1 (ja) * 1997-10-30 1999-03-17 日本電気株式会社 スタックモジュール用インターポーザとスタックモジュール
JPH11203889A (ja) * 1998-01-19 1999-07-30 Mitsubishi Electric Corp 半導体記憶装置
NO308149B1 (no) * 1998-06-02 2000-07-31 Thin Film Electronics Asa Skalerbar, integrert databehandlingsinnretning
US6021079A (en) * 1998-05-13 2000-02-01 Richard Mann Fast, low cost method of developing code for contact programmable ROMs
US5956276A (en) * 1998-09-16 1999-09-21 Mosel Vitelic Corporation Semiconductor memory having predecoder control of spare column select lines
US6408401B1 (en) * 1998-11-13 2002-06-18 Compaq Information Technologies Group, L.P. Embedded RAM with self-test and self-repair with spare rows and columns
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6385024B1 (en) * 2000-03-07 2002-05-07 Ss8 Networks, Inc. System and method for monitoring current consumption from current share components
JP2002008370A (ja) * 2000-06-21 2002-01-11 Mitsubishi Electric Corp 半導体記憶装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007095940A (ja) * 2005-09-28 2007-04-12 Fujitsu Ltd 半導体記憶装置
JP2011096341A (ja) * 2009-11-02 2011-05-12 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
EP1288968A2 (en) 2003-03-05
US20030023897A1 (en) 2003-01-30
EP1288968A3 (en) 2004-10-27
US6744681B2 (en) 2004-06-01
KR20030011601A (ko) 2003-02-11
US20040213059A1 (en) 2004-10-28
CN1316505C (zh) 2007-05-16
CN1399281A (zh) 2003-02-26
TW556208B (en) 2003-10-01

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