TW556208B - Fault-tolerant solid state memory - Google Patents

Fault-tolerant solid state memory Download PDF

Info

Publication number
TW556208B
TW556208B TW091111533A TW91111533A TW556208B TW 556208 B TW556208 B TW 556208B TW 091111533 A TW091111533 A TW 091111533A TW 91111533 A TW91111533 A TW 91111533A TW 556208 B TW556208 B TW 556208B
Authority
TW
Taiwan
Prior art keywords
address
line
block
lines
hierarchy
Prior art date
Application number
TW091111533A
Other languages
English (en)
Chinese (zh)
Inventor
Josh N Hogan
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of TW556208B publication Critical patent/TW556208B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
TW091111533A 2001-07-24 2002-05-30 Fault-tolerant solid state memory TW556208B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/911,968 US6744681B2 (en) 2001-07-24 2001-07-24 Fault-tolerant solid state memory

Publications (1)

Publication Number Publication Date
TW556208B true TW556208B (en) 2003-10-01

Family

ID=25431188

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091111533A TW556208B (en) 2001-07-24 2002-05-30 Fault-tolerant solid state memory

Country Status (6)

Country Link
US (2) US6744681B2 (cg-RX-API-DMAC7.html)
EP (1) EP1288968A3 (cg-RX-API-DMAC7.html)
JP (1) JP2003124441A (cg-RX-API-DMAC7.html)
KR (1) KR20030011601A (cg-RX-API-DMAC7.html)
CN (1) CN1316505C (cg-RX-API-DMAC7.html)
TW (1) TW556208B (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI383392B (zh) * 2007-06-18 2013-01-21 Micron Technology Inc 用於在一非揮發固態記憶體及其固態記憶體裝置中程式化速率判定及控制的方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US7003713B2 (en) * 2002-05-16 2006-02-21 Broadcom Corporation Variable Hamming error correction for a one-time-programmable-ROM
JP4892215B2 (ja) * 2005-09-28 2012-03-07 富士通セミコンダクター株式会社 半導体記憶装置
US7898882B2 (en) * 2006-06-23 2011-03-01 Synopsys, Inc. Architecture, system and method for compressing repair data in an integrated circuit (IC) design
US7813157B2 (en) * 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US20090225621A1 (en) * 2008-03-05 2009-09-10 Shepard Daniel R Split decoder storage array and methods of forming the same
US20090296445A1 (en) * 2008-06-02 2009-12-03 Shepard Daniel R Diode decoder array with non-sequential layout and methods of forming the same
US8325556B2 (en) * 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit
JP5297342B2 (ja) * 2009-11-02 2013-09-25 株式会社東芝 不揮発性半導体記憶装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689900A (en) * 1970-08-31 1972-09-05 Gen Electric Photo-coded diode array for read only memory
DE2050125A1 (de) * 1970-10-13 1972-04-20 Moeller J D Optik Verfahren zur Herstellung von elektrischen Sicherungselementen
US4389715A (en) * 1980-10-06 1983-06-21 Inmos Corporation Redundancy scheme for a dynamic RAM
US4489402A (en) * 1981-04-25 1984-12-18 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
JPS58125299A (ja) * 1982-01-19 1983-07-26 Toshiba Corp 冗長度を有するメモリ装置
US4751197A (en) * 1984-07-18 1988-06-14 Texas Instruments Incorporated Make-link programming of semiconductor devices using laser enhanced thermal breakdown of insulator
US4654830A (en) * 1984-11-27 1987-03-31 Monolithic Memories, Inc. Method and structure for disabling and replacing defective memory in a PROM
US4783732A (en) * 1985-12-12 1988-11-08 Itt Corporation Two-wire/three-port RAM for cellular array processor
US5166901A (en) * 1986-05-14 1992-11-24 Raytheon Company Programmable memory cell structure including a refractory metal barrier layer
GB8612454D0 (en) * 1986-05-22 1986-07-02 Inmos Ltd Redundancy scheme for multi-stage apparatus
US4868616A (en) * 1986-12-11 1989-09-19 Energy Conversion Devices, Inc. Amorphous electronic matrix array for liquid crystal display
US4988891A (en) * 1989-05-09 1991-01-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor neural network including photosensitive coupling elements
US5195010A (en) * 1990-01-23 1993-03-16 Thomson, S.A. Electrostatic discharge voltage protection circuit for a solid state instrument
US5241212A (en) * 1990-05-01 1993-08-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a redundant circuit portion and a manufacturing method of the same
US5412593A (en) * 1994-01-12 1995-05-02 Texas Instruments Incorporated Fuse and antifuse reprogrammable link for integrated circuits
US5625218A (en) * 1994-06-17 1997-04-29 Nippondenso Co., Ltd. Semiconductor device equipped with a heat-fusible thin film resistor and production method thereof
US5457649A (en) * 1994-08-26 1995-10-10 Microchip Technology, Inc. Semiconductor memory device and write-once, read-only semiconductor memory array using amorphous-silicon and method therefor
JPH0877776A (ja) * 1994-09-06 1996-03-22 Mitsubishi Electric Corp 半導体記憶装置
KR970001564U (ko) * 1995-06-21 1997-01-21 자동차용 후부차체의 보강구조
US5889694A (en) * 1996-03-05 1999-03-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US5798974A (en) * 1996-05-15 1998-08-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device realizing high speed access and low power consumption with redundant circuit
US5835396A (en) * 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
US5941997A (en) * 1996-11-26 1999-08-24 Play Incorporated Current-based contention detection and handling system
KR100258975B1 (ko) * 1996-12-10 2000-06-15 윤종용 반도체 메모리장치
US5877798A (en) * 1997-03-21 1999-03-02 Lexmark International Inc. Method and apparatus for automatically determining the style printhead installed in a laser printer
US6058052A (en) * 1997-08-21 2000-05-02 Cypress Semiconductor Corp. Redundancy scheme providing improvements in redundant circuit access time and integrated circuit layout area
JP2870530B1 (ja) * 1997-10-30 1999-03-17 日本電気株式会社 スタックモジュール用インターポーザとスタックモジュール
JPH11203889A (ja) * 1998-01-19 1999-07-30 Mitsubishi Electric Corp 半導体記憶装置
NO308149B1 (no) * 1998-06-02 2000-07-31 Thin Film Electronics Asa Skalerbar, integrert databehandlingsinnretning
US6021079A (en) * 1998-05-13 2000-02-01 Richard Mann Fast, low cost method of developing code for contact programmable ROMs
US5956276A (en) * 1998-09-16 1999-09-21 Mosel Vitelic Corporation Semiconductor memory having predecoder control of spare column select lines
US6408401B1 (en) * 1998-11-13 2002-06-18 Compaq Information Technologies Group, L.P. Embedded RAM with self-test and self-repair with spare rows and columns
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6385024B1 (en) * 2000-03-07 2002-05-07 Ss8 Networks, Inc. System and method for monitoring current consumption from current share components
JP2002008370A (ja) * 2000-06-21 2002-01-11 Mitsubishi Electric Corp 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI383392B (zh) * 2007-06-18 2013-01-21 Micron Technology Inc 用於在一非揮發固態記憶體及其固態記憶體裝置中程式化速率判定及控制的方法

Also Published As

Publication number Publication date
JP2003124441A (ja) 2003-04-25
EP1288968A2 (en) 2003-03-05
US20030023897A1 (en) 2003-01-30
EP1288968A3 (en) 2004-10-27
US6744681B2 (en) 2004-06-01
KR20030011601A (ko) 2003-02-11
US20040213059A1 (en) 2004-10-28
CN1316505C (zh) 2007-05-16
CN1399281A (zh) 2003-02-26

Similar Documents

Publication Publication Date Title
TWI223270B (en) Programmable address logic for solid state diode-based memory
US9165679B2 (en) Post package repairing method, method of preventing multiple activation of spare word lines, and semiconductor memory device including fuse programming circuit
US6570795B1 (en) Defective memory component of a memory device used to represent a data bit in a bit sequence
KR102549173B1 (ko) 메모리 장치
US20130262740A1 (en) Semiconductor memory device, systems and methods improving refresh quality for weak cell
KR102496506B1 (ko) 복수의 퓨즈 비트들을 독출하는 오티피 메모리 장치
US20060291303A1 (en) Method and apparatus for programming a memory array
TW556208B (en) Fault-tolerant solid state memory
TW548653B (en) Semiconductor memory device having redundancy memory circuit
CN107039083A (zh) 执行封装后修复操作的存储器设备
US20100182818A1 (en) Non-volatile semiconductor memory device and method of writing data therein
US20210272971A1 (en) Efuse memory cell, efuse memory array and using method thereof, and efuse system
JPS61131300A (ja) Ｐｒｏｍ内の欠陥メモリをデイスエーブルし置換する方法及び構成
US6535418B2 (en) Optically programmable address logic for solid state diode-based memory
KR102070610B1 (ko) 퓨즈 프로그래밍 회로를 구비한 반도체 메모리 장치 및 그에 따른 퓨즈 프로그래밍 방법
US6459648B1 (en) Fault-tolerant address logic for solid state memory
JP2004095141A (ja) データストレージメモリの複数のアレイのためのアドレス構造及び方法
CN113948148A (zh) 进行选择性地启用的ecc解码的熔丝逻辑
CN222354737U (zh) 记忆体装置
US6535455B1 (en) Fault-tolerant neighborhood-disjoint address logic for solid state memory
Veendrick Memory circuits and IP
JP2004127500A (ja) センス電圧を調整するメモリ記憶装置

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees