CN1316505C - 一种用于制造固态存储器装置的方法 - Google Patents

一种用于制造固态存储器装置的方法 Download PDF

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Publication number
CN1316505C
CN1316505C CNB02126953XA CN02126953A CN1316505C CN 1316505 C CN1316505 C CN 1316505C CN B02126953X A CNB02126953X A CN B02126953XA CN 02126953 A CN02126953 A CN 02126953A CN 1316505 C CN1316505 C CN 1316505C
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CN
China
Prior art keywords
address
level
line
elements
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB02126953XA
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English (en)
Chinese (zh)
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CN1399281A (zh
Inventor
J·N·霍甘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Hewlett Packard Co
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Publication of CN1399281A publication Critical patent/CN1399281A/zh
Application granted granted Critical
Publication of CN1316505C publication Critical patent/CN1316505C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
CNB02126953XA 2001-07-24 2002-07-24 一种用于制造固态存储器装置的方法 Expired - Lifetime CN1316505C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/911,968 US6744681B2 (en) 2001-07-24 2001-07-24 Fault-tolerant solid state memory
US09/911968 2001-07-24

Publications (2)

Publication Number Publication Date
CN1399281A CN1399281A (zh) 2003-02-26
CN1316505C true CN1316505C (zh) 2007-05-16

Family

ID=25431188

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB02126953XA Expired - Lifetime CN1316505C (zh) 2001-07-24 2002-07-24 一种用于制造固态存储器装置的方法

Country Status (6)

Country Link
US (2) US6744681B2 (cg-RX-API-DMAC7.html)
EP (1) EP1288968A3 (cg-RX-API-DMAC7.html)
JP (1) JP2003124441A (cg-RX-API-DMAC7.html)
KR (1) KR20030011601A (cg-RX-API-DMAC7.html)
CN (1) CN1316505C (cg-RX-API-DMAC7.html)
TW (1) TW556208B (cg-RX-API-DMAC7.html)

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US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US7003713B2 (en) * 2002-05-16 2006-02-21 Broadcom Corporation Variable Hamming error correction for a one-time-programmable-ROM
JP4892215B2 (ja) * 2005-09-28 2012-03-07 富士通セミコンダクター株式会社 半導体記憶装置
US7898882B2 (en) * 2006-06-23 2011-03-01 Synopsys, Inc. Architecture, system and method for compressing repair data in an integrated circuit (IC) design
US7630246B2 (en) * 2007-06-18 2009-12-08 Micron Technology, Inc. Programming rate identification and control in a solid state memory
US7813157B2 (en) * 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US20090225621A1 (en) * 2008-03-05 2009-09-10 Shepard Daniel R Split decoder storage array and methods of forming the same
US20090296445A1 (en) * 2008-06-02 2009-12-03 Shepard Daniel R Diode decoder array with non-sequential layout and methods of forming the same
US8325556B2 (en) * 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit
JP5297342B2 (ja) * 2009-11-02 2013-09-25 株式会社東芝 不揮発性半導体記憶装置

Citations (5)

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EP0183323A2 (en) * 1984-11-27 1986-06-04 Advanced Micro Devices, Inc. Method and structure for disabling and replacing defective memory in a prom device
US5835396A (en) * 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
US5889694A (en) * 1996-03-05 1999-03-30 Shepard; Daniel R. Dual-addressed rectifier storage device
WO1999063527A2 (en) * 1998-06-02 1999-12-09 Thin Film Electronics Asa Data storage and processing apparatus, and method for fabricating the same
US6185122B1 (en) * 1998-11-16 2001-02-06 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication

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JPS58125299A (ja) * 1982-01-19 1983-07-26 Toshiba Corp 冗長度を有するメモリ装置
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US4868616A (en) * 1986-12-11 1989-09-19 Energy Conversion Devices, Inc. Amorphous electronic matrix array for liquid crystal display
US4988891A (en) * 1989-05-09 1991-01-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor neural network including photosensitive coupling elements
US5195010A (en) * 1990-01-23 1993-03-16 Thomson, S.A. Electrostatic discharge voltage protection circuit for a solid state instrument
US5241212A (en) * 1990-05-01 1993-08-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a redundant circuit portion and a manufacturing method of the same
US5412593A (en) * 1994-01-12 1995-05-02 Texas Instruments Incorporated Fuse and antifuse reprogrammable link for integrated circuits
US5625218A (en) * 1994-06-17 1997-04-29 Nippondenso Co., Ltd. Semiconductor device equipped with a heat-fusible thin film resistor and production method thereof
US5457649A (en) * 1994-08-26 1995-10-10 Microchip Technology, Inc. Semiconductor memory device and write-once, read-only semiconductor memory array using amorphous-silicon and method therefor
JPH0877776A (ja) * 1994-09-06 1996-03-22 Mitsubishi Electric Corp 半導体記憶装置
KR970001564U (ko) * 1995-06-21 1997-01-21 자동차용 후부차체의 보강구조
US5798974A (en) * 1996-05-15 1998-08-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device realizing high speed access and low power consumption with redundant circuit
US5941997A (en) * 1996-11-26 1999-08-24 Play Incorporated Current-based contention detection and handling system
KR100258975B1 (ko) * 1996-12-10 2000-06-15 윤종용 반도체 메모리장치
US5877798A (en) * 1997-03-21 1999-03-02 Lexmark International Inc. Method and apparatus for automatically determining the style printhead installed in a laser printer
US6058052A (en) * 1997-08-21 2000-05-02 Cypress Semiconductor Corp. Redundancy scheme providing improvements in redundant circuit access time and integrated circuit layout area
JP2870530B1 (ja) * 1997-10-30 1999-03-17 日本電気株式会社 スタックモジュール用インターポーザとスタックモジュール
JPH11203889A (ja) * 1998-01-19 1999-07-30 Mitsubishi Electric Corp 半導体記憶装置
US6021079A (en) * 1998-05-13 2000-02-01 Richard Mann Fast, low cost method of developing code for contact programmable ROMs
US5956276A (en) * 1998-09-16 1999-09-21 Mosel Vitelic Corporation Semiconductor memory having predecoder control of spare column select lines
US6408401B1 (en) * 1998-11-13 2002-06-18 Compaq Information Technologies Group, L.P. Embedded RAM with self-test and self-repair with spare rows and columns
US6385024B1 (en) * 2000-03-07 2002-05-07 Ss8 Networks, Inc. System and method for monitoring current consumption from current share components
JP2002008370A (ja) * 2000-06-21 2002-01-11 Mitsubishi Electric Corp 半導体記憶装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0183323A2 (en) * 1984-11-27 1986-06-04 Advanced Micro Devices, Inc. Method and structure for disabling and replacing defective memory in a prom device
US5889694A (en) * 1996-03-05 1999-03-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US5835396A (en) * 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
WO1999063527A2 (en) * 1998-06-02 1999-12-09 Thin Film Electronics Asa Data storage and processing apparatus, and method for fabricating the same
US6185122B1 (en) * 1998-11-16 2001-02-06 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication

Also Published As

Publication number Publication date
JP2003124441A (ja) 2003-04-25
EP1288968A2 (en) 2003-03-05
US20030023897A1 (en) 2003-01-30
EP1288968A3 (en) 2004-10-27
US6744681B2 (en) 2004-06-01
KR20030011601A (ko) 2003-02-11
US20040213059A1 (en) 2004-10-28
CN1399281A (zh) 2003-02-26
TW556208B (en) 2003-10-01

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Owner name: SAMSUNG ELECTRONICS CO., LTD.

Free format text: FORMER OWNER: HEWLETT-PACKARD CO. (US) P.O. BOX 10301, PALO ALTO CALIFORNIA U.S.A.

Effective date: 20110222

C41 Transfer of patent application or patent right or utility model
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Address after: Gyeonggi Do, South Korea

Patentee after: SAMSUNG ELECTRONICS Co.,Ltd.

Address before: California, USA

Patentee before: Hewlett-Packard Co.

CX01 Expiry of patent term

Granted publication date: 20070516

CX01 Expiry of patent term