JP2003124198A5 - - Google Patents

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Publication number
JP2003124198A5
JP2003124198A5 JP2001319755A JP2001319755A JP2003124198A5 JP 2003124198 A5 JP2003124198 A5 JP 2003124198A5 JP 2001319755 A JP2001319755 A JP 2001319755A JP 2001319755 A JP2001319755 A JP 2001319755A JP 2003124198 A5 JP2003124198 A5 JP 2003124198A5
Authority
JP
Japan
Prior art keywords
frequency power
plasma processing
power supply
voltage
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001319755A
Other languages
English (en)
Japanese (ja)
Other versions
JP4070974B2 (ja
JP2003124198A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2001319755A external-priority patent/JP4070974B2/ja
Priority to JP2001319755A priority Critical patent/JP4070974B2/ja
Priority to KR1020037016380A priority patent/KR100595069B1/ko
Priority to US10/480,821 priority patent/US7476624B2/en
Priority to PCT/JP2002/005637 priority patent/WO2002103773A1/ja
Priority to KR1020057025126A priority patent/KR100764248B1/ko
Priority to CN2006101418496A priority patent/CN1956618B/zh
Priority to CNB028119614A priority patent/CN1287430C/zh
Publication of JP2003124198A publication Critical patent/JP2003124198A/ja
Publication of JP2003124198A5 publication Critical patent/JP2003124198A5/ja
Publication of JP4070974B2 publication Critical patent/JP4070974B2/ja
Application granted granted Critical
Priority to US12/335,872 priority patent/US8288286B2/en
Priority to US13/620,893 priority patent/US20130025789A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2001319755A 2001-06-15 2001-10-17 プラズマ処理方法及びプラズマ処理装置 Expired - Lifetime JP4070974B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2001319755A JP4070974B2 (ja) 2001-10-17 2001-10-17 プラズマ処理方法及びプラズマ処理装置
CN2006101418496A CN1956618B (zh) 2001-06-15 2002-06-07 干蚀刻方法
CNB028119614A CN1287430C (zh) 2001-06-15 2002-06-07 干蚀刻方法
US10/480,821 US7476624B2 (en) 2001-06-15 2002-06-07 Dry-etching method
PCT/JP2002/005637 WO2002103773A1 (fr) 2001-06-15 2002-06-07 Procede de gravure a sec
KR1020057025126A KR100764248B1 (ko) 2001-06-15 2002-06-07 드라이 에칭 방법
KR1020037016380A KR100595069B1 (ko) 2001-06-15 2002-06-07 드라이 에칭 방법
US12/335,872 US8288286B2 (en) 2001-06-15 2008-12-16 Dry-etching method
US13/620,893 US20130025789A1 (en) 2001-06-15 2012-09-15 Dry-etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001319755A JP4070974B2 (ja) 2001-10-17 2001-10-17 プラズマ処理方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2003124198A JP2003124198A (ja) 2003-04-25
JP2003124198A5 true JP2003124198A5 (cg-RX-API-DMAC10.html) 2005-06-30
JP4070974B2 JP4070974B2 (ja) 2008-04-02

Family

ID=19137263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001319755A Expired - Lifetime JP4070974B2 (ja) 2001-06-15 2001-10-17 プラズマ処理方法及びプラズマ処理装置

Country Status (1)

Country Link
JP (1) JP4070974B2 (cg-RX-API-DMAC10.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050069651A1 (en) * 2003-09-30 2005-03-31 Tokyo Electron Limited Plasma processing system
JP4527431B2 (ja) 2004-04-08 2010-08-18 東京エレクトロン株式会社 プラズマ処理装置
JP4527432B2 (ja) 2004-04-08 2010-08-18 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP4523352B2 (ja) 2004-07-20 2010-08-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR100855002B1 (ko) * 2007-05-23 2008-08-28 삼성전자주식회사 플라즈마 이온 주입시스템
JP6558901B2 (ja) 2015-01-06 2019-08-14 東京エレクトロン株式会社 プラズマ処理方法
JP7389573B2 (ja) * 2019-06-26 2023-11-30 株式会社アルバック プラズマ処理装置およびプラズマ処理方法
JP7236954B2 (ja) * 2019-08-06 2023-03-10 東京エレクトロン株式会社 プラズマ処理装置

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