JP2003077833A5 - - Google Patents
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- Publication number
- JP2003077833A5 JP2003077833A5 JP2001263953A JP2001263953A JP2003077833A5 JP 2003077833 A5 JP2003077833 A5 JP 2003077833A5 JP 2001263953 A JP2001263953 A JP 2001263953A JP 2001263953 A JP2001263953 A JP 2001263953A JP 2003077833 A5 JP2003077833 A5 JP 2003077833A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- polycrystalline semiconductor
- crystal
- film according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 85
- 239000010409 thin film Substances 0.000 claims description 62
- 239000013078 crystal Substances 0.000 claims description 49
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 230000003197 catalytic effect Effects 0.000 claims 11
- 239000003054 catalyst Substances 0.000 claims 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 150000001875 compounds Chemical class 0.000 claims 6
- 239000001257 hydrogen Substances 0.000 claims 6
- 229910052739 hydrogen Inorganic materials 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 229940126062 Compound A Drugs 0.000 claims 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims 4
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims 4
- 125000004429 atom Chemical group 0.000 claims 4
- 238000002425 crystallisation Methods 0.000 claims 4
- 230000008025 crystallization Effects 0.000 claims 4
- 230000001737 promoting effect Effects 0.000 claims 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- 238000001228 spectrum Methods 0.000 claims 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims 2
- 239000004973 liquid crystal related substance Substances 0.000 claims 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims 2
- 238000004151 rapid thermal annealing Methods 0.000 claims 2
- 230000000630 rising effect Effects 0.000 claims 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000003795 desorption Methods 0.000 claims 1
- 238000004868 gas analysis Methods 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229940078494 nickel acetate Drugs 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 230000007547 defect Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001263953A JP2003077833A (ja) | 2001-08-31 | 2001-08-31 | 多結晶半導体薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001263953A JP2003077833A (ja) | 2001-08-31 | 2001-08-31 | 多結晶半導体薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003077833A JP2003077833A (ja) | 2003-03-14 |
| JP2003077833A5 true JP2003077833A5 (enExample) | 2004-09-09 |
Family
ID=19090630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001263953A Pending JP2003077833A (ja) | 2001-08-31 | 2001-08-31 | 多結晶半導体薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003077833A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100960862B1 (ko) * | 2007-11-30 | 2010-06-08 | 주식회사 테라세미콘 | 실리콘 결정화 방법 |
| CN105659369B (zh) | 2013-10-22 | 2019-10-22 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4063986B2 (ja) * | 1998-12-25 | 2008-03-19 | シャープ株式会社 | 多結晶シリコン膜の作製方法 |
| JP3715848B2 (ja) * | 1999-09-22 | 2005-11-16 | シャープ株式会社 | 半導体装置の製造方法 |
| JP3432187B2 (ja) * | 1999-09-22 | 2003-08-04 | シャープ株式会社 | 半導体装置の製造方法 |
| JP4027052B2 (ja) * | 2001-04-18 | 2007-12-26 | シャープ株式会社 | 多結晶半導体薄膜およびその製造方法 |
-
2001
- 2001-08-31 JP JP2001263953A patent/JP2003077833A/ja active Pending
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