JP2003077833A - 多結晶半導体薄膜の製造方法 - Google Patents

多結晶半導体薄膜の製造方法

Info

Publication number
JP2003077833A
JP2003077833A JP2001263953A JP2001263953A JP2003077833A JP 2003077833 A JP2003077833 A JP 2003077833A JP 2001263953 A JP2001263953 A JP 2001263953A JP 2001263953 A JP2001263953 A JP 2001263953A JP 2003077833 A JP2003077833 A JP 2003077833A
Authority
JP
Japan
Prior art keywords
thin film
crystal
semiconductor thin
polycrystalline semiconductor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001263953A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003077833A5 (enExample
Inventor
Masao Moriguchi
正生 守口
Naoki Makita
直樹 牧田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2001263953A priority Critical patent/JP2003077833A/ja
Publication of JP2003077833A publication Critical patent/JP2003077833A/ja
Publication of JP2003077833A5 publication Critical patent/JP2003077833A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001263953A 2001-08-31 2001-08-31 多結晶半導体薄膜の製造方法 Pending JP2003077833A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001263953A JP2003077833A (ja) 2001-08-31 2001-08-31 多結晶半導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001263953A JP2003077833A (ja) 2001-08-31 2001-08-31 多結晶半導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JP2003077833A true JP2003077833A (ja) 2003-03-14
JP2003077833A5 JP2003077833A5 (enExample) 2004-09-09

Family

ID=19090630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001263953A Pending JP2003077833A (ja) 2001-08-31 2001-08-31 多結晶半導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JP2003077833A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135488A (ja) * 2007-11-30 2009-06-18 Tera Semicon Corp シリコンの結晶化方法
WO2015060318A1 (en) * 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195793A (ja) * 1998-12-25 2000-07-14 Fujitsu Ltd 多結晶シリコン膜の作製方法
JP2001094109A (ja) * 1999-09-22 2001-04-06 Sharp Corp 半導体装置およびその製造方法
JP2001093835A (ja) * 1999-09-22 2001-04-06 Sharp Corp 半導体装置の製造方法
JP2002313720A (ja) * 2001-04-18 2002-10-25 Sharp Corp 多結晶半導体薄膜およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195793A (ja) * 1998-12-25 2000-07-14 Fujitsu Ltd 多結晶シリコン膜の作製方法
JP2001094109A (ja) * 1999-09-22 2001-04-06 Sharp Corp 半導体装置およびその製造方法
JP2001093835A (ja) * 1999-09-22 2001-04-06 Sharp Corp 半導体装置の製造方法
JP2002313720A (ja) * 2001-04-18 2002-10-25 Sharp Corp 多結晶半導体薄膜およびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135488A (ja) * 2007-11-30 2009-06-18 Tera Semicon Corp シリコンの結晶化方法
WO2015060318A1 (en) * 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9431435B2 (en) 2013-10-22 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9780201B2 (en) 2013-10-22 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US10186604B2 (en) 2013-10-22 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same

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