JP2003060162A5 - - Google Patents

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Publication number
JP2003060162A5
JP2003060162A5 JP2002189472A JP2002189472A JP2003060162A5 JP 2003060162 A5 JP2003060162 A5 JP 2003060162A5 JP 2002189472 A JP2002189472 A JP 2002189472A JP 2002189472 A JP2002189472 A JP 2002189472A JP 2003060162 A5 JP2003060162 A5 JP 2003060162A5
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JP
Japan
Prior art keywords
electrode
trench
depositing
diode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002189472A
Other languages
English (en)
Japanese (ja)
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JP2003060162A (ja
Filing date
Publication date
Priority claimed from US09/896,480 external-priority patent/US6599796B2/en
Application filed filed Critical
Publication of JP2003060162A publication Critical patent/JP2003060162A/ja
Publication of JP2003060162A5 publication Critical patent/JP2003060162A5/ja
Pending legal-status Critical Current

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JP2002189472A 2001-06-29 2002-06-28 Ｐｉｒｍメモリアレイ内のクロストークを低減するための装置および製造プロセス Pending JP2003060162A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/896,480 US6599796B2 (en) 2001-06-29 2001-06-29 Apparatus and fabrication process to reduce crosstalk in pirm memory array
US09/896480 2001-06-29

Publications (2)

Publication Number Publication Date
JP2003060162A JP2003060162A (ja) 2003-02-28
JP2003060162A5 true JP2003060162A5 (https=) 2005-04-21

Family

ID=25406289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002189472A Pending JP2003060162A (ja) 2001-06-29 2002-06-28 Ｐｉｒｍメモリアレイ内のクロストークを低減するための装置および製造プロセス

Country Status (7)

Country Link
US (1) US6599796B2 (https=)
EP (1) EP1271650B1 (https=)
JP (1) JP2003060162A (https=)
KR (1) KR20030003106A (https=)
CN (1) CN1395312A (https=)
DE (1) DE60219719T2 (https=)
TW (1) TW546751B (https=)

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US8638584B2 (en) * 2010-02-02 2014-01-28 Unity Semiconductor Corporation Memory architectures and techniques to enhance throughput for cross-point arrays
US8891276B2 (en) 2011-06-10 2014-11-18 Unity Semiconductor Corporation Memory array with local bitlines and local-to-global bitline pass gates and gain stages
US10566056B2 (en) 2011-06-10 2020-02-18 Unity Semiconductor Corporation Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
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