JP2003060162A - Ｐｉｒｍメモリアレイ内のクロストークを低減するための装置および製造プロセス - Google Patents

Ｐｉｒｍメモリアレイ内のクロストークを低減するための装置および製造プロセス

Info

Publication number
JP2003060162A
JP2003060162A JP2002189472A JP2002189472A JP2003060162A JP 2003060162 A JP2003060162 A JP 2003060162A JP 2002189472 A JP2002189472 A JP 2002189472A JP 2002189472 A JP2002189472 A JP 2002189472A JP 2003060162 A JP2003060162 A JP 2003060162A
Authority
JP
Japan
Prior art keywords
diode
electrode
memory
layer
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002189472A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003060162A5 (https=
Inventor
Ping Mei
ピン・メイ
Carl P Taussig
カール・ピー・タウシグ
Patricia A Beck
パトリシア・エイ・ベック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2003060162A publication Critical patent/JP2003060162A/ja
Publication of JP2003060162A5 publication Critical patent/JP2003060162A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/16—Subject matter not provided for in other groups of this subclass comprising memory cells having diodes

Landscapes

  • Semiconductor Memories (AREA)
JP2002189472A 2001-06-29 2002-06-28 Ｐｉｒｍメモリアレイ内のクロストークを低減するための装置および製造プロセス Pending JP2003060162A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/896,480 US6599796B2 (en) 2001-06-29 2001-06-29 Apparatus and fabrication process to reduce crosstalk in pirm memory array
US09/896480 2001-06-29

Publications (2)

Publication Number Publication Date
JP2003060162A true JP2003060162A (ja) 2003-02-28
JP2003060162A5 JP2003060162A5 (https=) 2005-04-21

Family

ID=25406289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002189472A Pending JP2003060162A (ja) 2001-06-29 2002-06-28 Ｐｉｒｍメモリアレイ内のクロストークを低減するための装置および製造プロセス

Country Status (7)

Country Link
US (1) US6599796B2 (https=)
EP (1) EP1271650B1 (https=)
JP (1) JP2003060162A (https=)
KR (1) KR20030003106A (https=)
CN (1) CN1395312A (https=)
DE (1) DE60219719T2 (https=)
TW (1) TW546751B (https=)

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CN101752312B (zh) * 2008-12-03 2012-05-30 中国科学院上海微系统与信息技术研究所 具有双浅沟道隔离槽的高密度二极管阵列的制造方法
US8638584B2 (en) * 2010-02-02 2014-01-28 Unity Semiconductor Corporation Memory architectures and techniques to enhance throughput for cross-point arrays
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Also Published As

Publication number Publication date
US6599796B2 (en) 2003-07-29
EP1271650A2 (en) 2003-01-02
TW546751B (en) 2003-08-11
DE60219719T2 (de) 2008-01-31
CN1395312A (zh) 2003-02-05
EP1271650A3 (en) 2003-12-03
US20030003633A1 (en) 2003-01-02
EP1271650B1 (en) 2007-04-25
KR20030003106A (ko) 2003-01-09
DE60219719D1 (de) 2007-06-06

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