TW546751B - Apparatus and fabrication process to reduce crosstalk in PIRM memory array - Google Patents
Apparatus and fabrication process to reduce crosstalk in PIRM memory array Download PDFInfo
- Publication number
- TW546751B TW546751B TW091111676A TW91111676A TW546751B TW 546751 B TW546751 B TW 546751B TW 091111676 A TW091111676 A TW 091111676A TW 91111676 A TW91111676 A TW 91111676A TW 546751 B TW546751 B TW 546751B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- layer
- electrodes
- diode
- memory
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 230000008569 process Effects 0.000 title abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 33
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- 238000002161 passivation Methods 0.000 claims abstract description 30
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- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims abstract description 8
- 210000004027 cell Anatomy 0.000 claims description 54
- 239000010409 thin film Substances 0.000 claims description 9
- 238000000746 purification Methods 0.000 claims description 5
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- 229910052751 metal Inorganic materials 0.000 description 11
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
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- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000003141 anti-fusion Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- 238000000992 sputter etching Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/16—Subject matter not provided for in other groups of this subclass comprising memory cells having diodes
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/896,480 US6599796B2 (en) | 2001-06-29 | 2001-06-29 | Apparatus and fabrication process to reduce crosstalk in pirm memory array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW546751B true TW546751B (en) | 2003-08-11 |
Family
ID=25406289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091111676A TW546751B (en) | 2001-06-29 | 2002-05-31 | Apparatus and fabrication process to reduce crosstalk in PIRM memory array |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6599796B2 (https=) |
| EP (1) | EP1271650B1 (https=) |
| JP (1) | JP2003060162A (https=) |
| KR (1) | KR20030003106A (https=) |
| CN (1) | CN1395312A (https=) |
| DE (1) | DE60219719T2 (https=) |
| TW (1) | TW546751B (https=) |
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| US5673218A (en) | 1996-03-05 | 1997-09-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
| US6956757B2 (en) * | 2000-06-22 | 2005-10-18 | Contour Semiconductor, Inc. | Low cost high density rectifier matrix memory |
| WO2002027768A2 (en) * | 2000-09-27 | 2002-04-04 | Nüp2 Incorporated | Fabrication of semiconductor devices |
| DE10155023B4 (de) * | 2001-11-05 | 2008-11-06 | Qimonda Ag | Leitungsanordnung für Bitleitungen zur Kontaktierung mindestens einer Speicherzelle und Verfahren zur Herstellung einer Leitungsanordnung für Bitleitungen |
| US6642603B1 (en) * | 2002-06-27 | 2003-11-04 | Matrix Semiconductor, Inc. | Same conductivity type highly-doped regions for antifuse memory cell |
| US6683365B1 (en) * | 2002-08-01 | 2004-01-27 | Micron Technology, Inc. | Edge intensive antifuse device structure |
| US6867132B2 (en) | 2002-09-17 | 2005-03-15 | Hewlett-Packard Development Company, L.P. | Large line conductive pads for interconnection of stackable circuitry |
| US20060171200A1 (en) | 2004-02-06 | 2006-08-03 | Unity Semiconductor Corporation | Memory using mixed valence conductive oxides |
| US7082052B2 (en) | 2004-02-06 | 2006-07-25 | Unity Semiconductor Corporation | Multi-resistive state element with reactive metal |
| US7195950B2 (en) * | 2004-07-21 | 2007-03-27 | Hewlett-Packard Development Company, L.P. | Forming a plurality of thin-film devices |
| US7106639B2 (en) * | 2004-09-01 | 2006-09-12 | Hewlett-Packard Development Company, L.P. | Defect management enabled PIRM and method |
| US7110278B2 (en) * | 2004-09-29 | 2006-09-19 | Intel Corporation | Crosspoint memory array utilizing one time programmable antifuse cells |
| US7321502B2 (en) * | 2004-09-30 | 2008-01-22 | Intel Corporation | Non volatile data storage through dielectric breakdown |
| KR100593750B1 (ko) * | 2004-11-10 | 2006-06-28 | 삼성전자주식회사 | 이성분계 금속 산화막을 데이터 저장 물질막으로 채택하는교차점 비휘발성 기억소자 및 그 제조방법 |
| US8270193B2 (en) | 2010-01-29 | 2012-09-18 | Unity Semiconductor Corporation | Local bit lines and methods of selecting the same to access memory elements in cross-point arrays |
| US20130082232A1 (en) | 2011-09-30 | 2013-04-04 | Unity Semiconductor Corporation | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells |
| US8559209B2 (en) | 2011-06-10 | 2013-10-15 | Unity Semiconductor Corporation | Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements |
| US8565003B2 (en) | 2011-06-28 | 2013-10-22 | Unity Semiconductor Corporation | Multilayer cross-point memory array having reduced disturb susceptibility |
| US8937292B2 (en) | 2011-08-15 | 2015-01-20 | Unity Semiconductor Corporation | Vertical cross point arrays for ultra high density memory applications |
| US7269062B2 (en) * | 2005-12-09 | 2007-09-11 | Macronix International Co., Ltd. | Gated diode nonvolatile memory cell |
| US7473986B2 (en) * | 2006-09-22 | 2009-01-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Positive-intrinsic-negative (PIN) diode semiconductor devices and fabrication methods thereof |
| US7813157B2 (en) * | 2007-10-29 | 2010-10-12 | Contour Semiconductor, Inc. | Non-linear conductor memory |
| US20090225621A1 (en) * | 2008-03-05 | 2009-09-10 | Shepard Daniel R | Split decoder storage array and methods of forming the same |
| WO2009149061A2 (en) * | 2008-06-02 | 2009-12-10 | Contour Semiconductor, Inc. | Diode decoder array with non-sequential layout and methods of forming the same |
| US8586962B2 (en) | 2008-10-06 | 2013-11-19 | Samsung Electronics Co., Ltd. | Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters |
| US8105884B2 (en) | 2008-10-06 | 2012-01-31 | Samsung Electronics Co., Ltd. | Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters |
| US8325556B2 (en) * | 2008-10-07 | 2012-12-04 | Contour Semiconductor, Inc. | Sequencing decoder circuit |
| KR101493874B1 (ko) * | 2008-11-12 | 2015-02-16 | 삼성전자주식회사 | 비휘발성 메모리 소자 |
| CN101752312B (zh) * | 2008-12-03 | 2012-05-30 | 中国科学院上海微系统与信息技术研究所 | 具有双浅沟道隔离槽的高密度二极管阵列的制造方法 |
| US8638584B2 (en) * | 2010-02-02 | 2014-01-28 | Unity Semiconductor Corporation | Memory architectures and techniques to enhance throughput for cross-point arrays |
| US8891276B2 (en) | 2011-06-10 | 2014-11-18 | Unity Semiconductor Corporation | Memory array with local bitlines and local-to-global bitline pass gates and gain stages |
| US10566056B2 (en) | 2011-06-10 | 2020-02-18 | Unity Semiconductor Corporation | Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations |
| US9117495B2 (en) | 2011-06-10 | 2015-08-25 | Unity Semiconductor Corporation | Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations |
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| IL61671A (en) * | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Diode and rom or eeprom devices using it |
| US4419741A (en) * | 1980-01-28 | 1983-12-06 | Rca Corporation | Read only memory (ROM) having high density memory array with on pitch decoder circuitry |
| US4423432A (en) * | 1980-01-28 | 1983-12-27 | Rca Corporation | Apparatus for decoding multiple input lines |
| US4667189A (en) * | 1984-04-25 | 1987-05-19 | Energy Conversion Devices, Inc. | Programmable semiconductor switch for a display matrix or the like and method for making same |
| US4698900A (en) | 1986-03-27 | 1987-10-13 | Texas Instruments Incorporated | Method of making a non-volatile memory having dielectric filled trenches |
| US5008722A (en) | 1986-03-27 | 1991-04-16 | Texas Instruments Incorporated | Non-volatile memory |
| US4881114A (en) * | 1986-05-16 | 1989-11-14 | Actel Corporation | Selectively formable vertical diode circuit element |
| US5227660A (en) * | 1987-11-09 | 1993-07-13 | Hitachi, Ltd. | Semiconductor device |
| US5311039A (en) * | 1990-04-24 | 1994-05-10 | Seiko Epson Corporation | PROM and ROM memory cells |
| GB9113795D0 (en) * | 1991-06-26 | 1991-08-14 | Philips Electronic Associated | Thin-film rom devices and their manufacture |
| US5170243A (en) * | 1991-11-04 | 1992-12-08 | International Business Machines Corporation | Bit line configuration for semiconductor memory |
| JP3256603B2 (ja) * | 1993-07-05 | 2002-02-12 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US5362665A (en) * | 1994-02-14 | 1994-11-08 | Industrial Technology Research Institute | Method of making vertical DRAM cross point memory cell |
| GB9404113D0 (en) * | 1994-03-03 | 1994-04-20 | Philips Electronics Uk Ltd | A charge storage device |
| GB9404111D0 (en) * | 1994-03-03 | 1994-04-20 | Philips Electronics Uk Ltd | A charge storage device |
| JP3501416B2 (ja) * | 1994-04-28 | 2004-03-02 | 忠弘 大見 | 半導体装置 |
| US5903041A (en) * | 1994-06-21 | 1999-05-11 | Aptix Corporation | Integrated two-terminal fuse-antifuse and fuse and integrated two-terminal fuse-antifuse structures incorporating an air gap |
| SE9500013D0 (sv) * | 1995-01-03 | 1995-01-03 | Abb Research Ltd | Semiconductor device having a passivation layer |
| US5901065A (en) * | 1996-02-07 | 1999-05-04 | Motorola, Inc. | Apparatus and method for automatically placing ties and connection elements within an integrated circuit |
| US5736433A (en) * | 1996-05-22 | 1998-04-07 | Sgs-Thomson Microelectronics, Inc. | Double mask hermetic passivation method providing enhanced resistance to moisture |
| WO1997047041A2 (en) * | 1996-06-05 | 1997-12-11 | Philips Electronics N.V. | Programmable, non-volatile memory device, and method of manufacturing such a device |
| US5835396A (en) * | 1996-10-17 | 1998-11-10 | Zhang; Guobiao | Three-dimensional read-only memory |
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| US6180503B1 (en) * | 1999-07-29 | 2001-01-30 | Vanguard International Semiconductor Corporation | Passivation layer etching process for memory arrays with fusible links |
| DE60138533D1 (de) * | 2000-03-23 | 2009-06-10 | Cross Match Technologies Inc | Piezoelektrisches biometrisches identifikationsgerät und dessen anwendung |
| US6269018B1 (en) * | 2000-04-13 | 2001-07-31 | International Business Machines Corporation | Magnetic random access memory using current through MTJ write mechanism |
| US6396121B1 (en) * | 2000-05-31 | 2002-05-28 | International Business Machines Corporation | Structures and methods of anti-fuse formation in SOI |
| US6385075B1 (en) * | 2001-06-05 | 2002-05-07 | Hewlett-Packard Company | Parallel access of cross-point diode memory arrays |
-
2001
- 2001-06-29 US US09/896,480 patent/US6599796B2/en not_active Expired - Lifetime
-
2002
- 2002-05-31 TW TW091111676A patent/TW546751B/zh not_active IP Right Cessation
- 2002-06-20 DE DE60219719T patent/DE60219719T2/de not_active Expired - Fee Related
- 2002-06-20 EP EP02254311A patent/EP1271650B1/en not_active Expired - Lifetime
- 2002-06-28 KR KR1020020037050A patent/KR20030003106A/ko not_active Ceased
- 2002-06-28 JP JP2002189472A patent/JP2003060162A/ja active Pending
- 2002-06-28 CN CN02124494A patent/CN1395312A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US6599796B2 (en) | 2003-07-29 |
| EP1271650A2 (en) | 2003-01-02 |
| DE60219719T2 (de) | 2008-01-31 |
| CN1395312A (zh) | 2003-02-05 |
| JP2003060162A (ja) | 2003-02-28 |
| EP1271650A3 (en) | 2003-12-03 |
| US20030003633A1 (en) | 2003-01-02 |
| EP1271650B1 (en) | 2007-04-25 |
| KR20030003106A (ko) | 2003-01-09 |
| DE60219719D1 (de) | 2007-06-06 |
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| Date | Code | Title | Description |
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| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |