JP2003046062A5 - - Google Patents
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- Publication number
- JP2003046062A5 JP2003046062A5 JP2001229409A JP2001229409A JP2003046062A5 JP 2003046062 A5 JP2003046062 A5 JP 2003046062A5 JP 2001229409 A JP2001229409 A JP 2001229409A JP 2001229409 A JP2001229409 A JP 2001229409A JP 2003046062 A5 JP2003046062 A5 JP 2003046062A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- gate insulating
- electrode material
- gate electrode
- misfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000007772 electrode material Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims 2
- 238000002955 isolation Methods 0.000 claims 2
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001229409A JP2003046062A (ja) | 2001-07-30 | 2001-07-30 | 半導体メモリ装置の製造方法 |
| US10/201,111 US6680230B2 (en) | 2001-07-25 | 2002-07-24 | Semiconductor device and method of fabricating the same |
| KR10-2002-0043527A KR100440698B1 (ko) | 2001-07-25 | 2002-07-24 | 반도체 장치 및 그 제조 방법 |
| TW091116578A TW558828B (en) | 2001-07-25 | 2002-07-25 | Semiconductor device and method of fabricating the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001229409A JP2003046062A (ja) | 2001-07-30 | 2001-07-30 | 半導体メモリ装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003046062A JP2003046062A (ja) | 2003-02-14 |
| JP2003046062A5 true JP2003046062A5 (https=) | 2005-06-23 |
Family
ID=19061764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001229409A Pending JP2003046062A (ja) | 2001-07-25 | 2001-07-30 | 半導体メモリ装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003046062A (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3944013B2 (ja) | 2002-07-09 | 2007-07-11 | 株式会社東芝 | 不揮発性半導体メモリ装置およびその製造方法 |
| JP4817615B2 (ja) * | 2004-05-31 | 2011-11-16 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| KR100562153B1 (ko) * | 2004-07-23 | 2006-03-17 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 제조방법 |
| US7482223B2 (en) * | 2004-12-22 | 2009-01-27 | Sandisk Corporation | Multi-thickness dielectric for semiconductor memory |
| KR101094840B1 (ko) * | 2005-07-12 | 2011-12-16 | 삼성전자주식회사 | 낸드형 플래시 메모리 장치 및 그 제조 방법 |
| US9466373B2 (en) | 2013-12-27 | 2016-10-11 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor storage device |
| CN107799528B (zh) * | 2016-08-30 | 2020-07-17 | 华邦电子股份有限公司 | 存储元件的制造方法 |
| CN116053274B (zh) * | 2023-01-28 | 2023-06-27 | 合肥晶合集成电路股份有限公司 | 一种半导体集成器件及其制作方法 |
-
2001
- 2001-07-30 JP JP2001229409A patent/JP2003046062A/ja active Pending
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