JP2003046062A - 半導体メモリ装置の製造方法 - Google Patents

半導体メモリ装置の製造方法

Info

Publication number
JP2003046062A
JP2003046062A JP2001229409A JP2001229409A JP2003046062A JP 2003046062 A JP2003046062 A JP 2003046062A JP 2001229409 A JP2001229409 A JP 2001229409A JP 2001229409 A JP2001229409 A JP 2001229409A JP 2003046062 A JP2003046062 A JP 2003046062A
Authority
JP
Japan
Prior art keywords
insulating film
film
gate insulating
gate
electrode material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001229409A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003046062A5 (https=
Inventor
Norihisa Arai
範久 新井
Riichiro Shirata
理一郎 白田
Akira Shimizu
暁 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP2001229409A priority Critical patent/JP2003046062A/ja
Priority to US10/201,111 priority patent/US6680230B2/en
Priority to KR10-2002-0043527A priority patent/KR100440698B1/ko
Priority to TW091116578A priority patent/TW558828B/zh
Publication of JP2003046062A publication Critical patent/JP2003046062A/ja
Publication of JP2003046062A5 publication Critical patent/JP2003046062A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001229409A 2001-07-25 2001-07-30 半導体メモリ装置の製造方法 Pending JP2003046062A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001229409A JP2003046062A (ja) 2001-07-30 2001-07-30 半導体メモリ装置の製造方法
US10/201,111 US6680230B2 (en) 2001-07-25 2002-07-24 Semiconductor device and method of fabricating the same
KR10-2002-0043527A KR100440698B1 (ko) 2001-07-25 2002-07-24 반도체 장치 및 그 제조 방법
TW091116578A TW558828B (en) 2001-07-25 2002-07-25 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001229409A JP2003046062A (ja) 2001-07-30 2001-07-30 半導体メモリ装置の製造方法

Publications (2)

Publication Number Publication Date
JP2003046062A true JP2003046062A (ja) 2003-02-14
JP2003046062A5 JP2003046062A5 (https=) 2005-06-23

Family

ID=19061764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001229409A Pending JP2003046062A (ja) 2001-07-25 2001-07-30 半導体メモリ装置の製造方法

Country Status (1)

Country Link
JP (1) JP2003046062A (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347331A (ja) * 2004-05-31 2005-12-15 Toshiba Corp 不揮発性半導体記憶装置
JP2006041503A (ja) * 2004-07-23 2006-02-09 Hynix Semiconductor Inc フラッシュメモリ素子の製造方法
JP2007027726A (ja) * 2005-07-12 2007-02-01 Samsung Electronics Co Ltd Ｎａｎｄ型フラッシュメモリ装置及びその製造方法
JP2008526027A (ja) * 2004-12-22 2008-07-17 サンディスク コーポレイション 半導体メモリ用の複数の厚みを有する誘電体
US7948026B2 (en) 2002-07-09 2011-05-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and method of manufacturing the same
US9466373B2 (en) 2013-12-27 2016-10-11 Kabushiki Kaisha Toshiba Nonvolatile semiconductor storage device
JP2018037631A (ja) * 2016-08-30 2018-03-08 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． メモリデバイスの製造方法
CN116053274A (zh) * 2023-01-28 2023-05-02 合肥晶合集成电路股份有限公司 一种半导体集成器件及其制作方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7948026B2 (en) 2002-07-09 2011-05-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and method of manufacturing the same
US8138043B2 (en) 2002-07-09 2012-03-20 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and method of manufacturing the same
US8674431B2 (en) 2002-07-09 2014-03-18 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and method of manufacturing the same
JP2005347331A (ja) * 2004-05-31 2005-12-15 Toshiba Corp 不揮発性半導体記憶装置
JP2006041503A (ja) * 2004-07-23 2006-02-09 Hynix Semiconductor Inc フラッシュメモリ素子の製造方法
JP2008526027A (ja) * 2004-12-22 2008-07-17 サンディスク コーポレイション 半導体メモリ用の複数の厚みを有する誘電体
JP4796593B2 (ja) * 2004-12-22 2011-10-19 サンディスク コーポレイション 半導体メモリ用の複数の厚みを有する誘電体を形成する方法
JP2007027726A (ja) * 2005-07-12 2007-02-01 Samsung Electronics Co Ltd Ｎａｎｄ型フラッシュメモリ装置及びその製造方法
US9466373B2 (en) 2013-12-27 2016-10-11 Kabushiki Kaisha Toshiba Nonvolatile semiconductor storage device
JP2018037631A (ja) * 2016-08-30 2018-03-08 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． メモリデバイスの製造方法
CN116053274A (zh) * 2023-01-28 2023-05-02 合肥晶合集成电路股份有限公司 一种半导体集成器件及其制作方法

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