JP2003037251A5 - - Google Patents

Download PDF

Info

Publication number
JP2003037251A5
JP2003037251A5 JP2001225027A JP2001225027A JP2003037251A5 JP 2003037251 A5 JP2003037251 A5 JP 2003037251A5 JP 2001225027 A JP2001225027 A JP 2001225027A JP 2001225027 A JP2001225027 A JP 2001225027A JP 2003037251 A5 JP2003037251 A5 JP 2003037251A5
Authority
JP
Japan
Prior art keywords
gate electrode
circuit region
gate
film
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001225027A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003037251A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001225027A priority Critical patent/JP2003037251A/ja
Priority claimed from JP2001225027A external-priority patent/JP2003037251A/ja
Priority to US10/201,111 priority patent/US6680230B2/en
Priority to KR10-2002-0043527A priority patent/KR100440698B1/ko
Priority to TW091116578A priority patent/TW558828B/zh
Publication of JP2003037251A publication Critical patent/JP2003037251A/ja
Publication of JP2003037251A5 publication Critical patent/JP2003037251A5/ja
Pending legal-status Critical Current

Links

JP2001225027A 2001-07-25 2001-07-25 半導体装置及び半導体装置の製造方法 Pending JP2003037251A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001225027A JP2003037251A (ja) 2001-07-25 2001-07-25 半導体装置及び半導体装置の製造方法
US10/201,111 US6680230B2 (en) 2001-07-25 2002-07-24 Semiconductor device and method of fabricating the same
KR10-2002-0043527A KR100440698B1 (ko) 2001-07-25 2002-07-24 반도체 장치 및 그 제조 방법
TW091116578A TW558828B (en) 2001-07-25 2002-07-25 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001225027A JP2003037251A (ja) 2001-07-25 2001-07-25 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2003037251A JP2003037251A (ja) 2003-02-07
JP2003037251A5 true JP2003037251A5 (https=) 2005-06-23

Family

ID=19058087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001225027A Pending JP2003037251A (ja) 2001-07-25 2001-07-25 半導体装置及び半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2003037251A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005026589A (ja) 2003-07-04 2005-01-27 Toshiba Corp 半導体記憶装置及びその製造方法
JP4276510B2 (ja) * 2003-10-02 2009-06-10 株式会社東芝 半導体記憶装置とその製造方法
KR100542395B1 (ko) * 2003-11-13 2006-01-11 주식회사 하이닉스반도체 낸드 플래시 소자의 제조 방법
KR100520684B1 (ko) * 2003-11-19 2005-10-11 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조 방법
JP4316540B2 (ja) 2005-06-24 2009-08-19 株式会社東芝 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法
JP4791799B2 (ja) * 2005-11-07 2011-10-12 株式会社東芝 半導体記憶装置及びその製造方法

Similar Documents

Publication Publication Date Title
JP2006041354A5 (https=)
WO2000070683A1 (en) Semiconductor memory
JP2006165365A (ja) 半導体装置および半導体装置の製造方法
KR970067903A (ko) 불휘발성 메모리소자, 그 제조방법 및 구동방법
JPWO2000070683A1 (ja) 半導体記憶装置
KR950034731A (ko) 비휘발성 반도체 메모리장치의 제조방법
JP2655124B2 (ja) 不揮発性半導体記憶装置およびその製造方法
JP2652931B2 (ja) 不揮発性メモリ素子の製造方法
US6673674B2 (en) Method of manufacturing a semiconductor device having a T-shaped floating gate
JP2003037251A5 (https=)
JPH04111352A (ja) 不揮発性メモリ素子
JP2006024705A5 (https=)
JP2005039067A5 (https=)
JP2003188287A5 (https=)
JP2005183763A (ja) 不揮発性メモリを含む半導体装置の製造方法
JP2003046062A5 (https=)
JP2003017691A5 (https=)
JP2001196477A5 (https=)
JP2002289706A5 (https=)
JP2007294915A5 (https=)
KR100940644B1 (ko) 반도체 소자 및 그 제조방법
KR100645197B1 (ko) Ｎａｎｄ형 플래쉬 메모리 소자의 제조 방법
KR100734075B1 (ko) 플래쉬 메모리 셀의 구조 및 그의 제조 방법
JP2581416B2 (ja) 半導体記憶装置の製造方法
KR960026900A (ko) 가상 접지 eprom 셀 구조를 갖는 비휘발성 반도체 기억 장치 및 그 제조 방법