JP2003037251A - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法

Info

Publication number
JP2003037251A
JP2003037251A JP2001225027A JP2001225027A JP2003037251A JP 2003037251 A JP2003037251 A JP 2003037251A JP 2001225027 A JP2001225027 A JP 2001225027A JP 2001225027 A JP2001225027 A JP 2001225027A JP 2003037251 A JP2003037251 A JP 2003037251A
Authority
JP
Japan
Prior art keywords
film
gate electrode
thickness
region
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001225027A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003037251A5 (https=
Inventor
Norihisa Arai
範久 新井
Fumitaka Arai
史隆 荒井
Seiichi Aritome
誠一 有留
Riichiro Shirata
理一郎 白田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP2001225027A priority Critical patent/JP2003037251A/ja
Priority to US10/201,111 priority patent/US6680230B2/en
Priority to KR10-2002-0043527A priority patent/KR100440698B1/ko
Priority to TW091116578A priority patent/TW558828B/zh
Publication of JP2003037251A publication Critical patent/JP2003037251A/ja
Publication of JP2003037251A5 publication Critical patent/JP2003037251A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2001225027A 2001-07-25 2001-07-25 半導体装置及び半導体装置の製造方法 Pending JP2003037251A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001225027A JP2003037251A (ja) 2001-07-25 2001-07-25 半導体装置及び半導体装置の製造方法
US10/201,111 US6680230B2 (en) 2001-07-25 2002-07-24 Semiconductor device and method of fabricating the same
KR10-2002-0043527A KR100440698B1 (ko) 2001-07-25 2002-07-24 반도체 장치 및 그 제조 방법
TW091116578A TW558828B (en) 2001-07-25 2002-07-25 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001225027A JP2003037251A (ja) 2001-07-25 2001-07-25 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2003037251A true JP2003037251A (ja) 2003-02-07
JP2003037251A5 JP2003037251A5 (https=) 2005-06-23

Family

ID=19058087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001225027A Pending JP2003037251A (ja) 2001-07-25 2001-07-25 半導体装置及び半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2003037251A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116551A (ja) * 2003-10-02 2005-04-28 Toshiba Corp 半導体記憶装置とその製造方法
JP2005150678A (ja) * 2003-11-19 2005-06-09 Hynix Semiconductor Inc フラッシュメモリ素子の製造方法
JP2005150689A (ja) * 2003-11-13 2005-06-09 Hynix Semiconductor Inc Ｎａｎｄフラッシュ素子の製造方法
US7012295B2 (en) 2003-07-04 2006-03-14 Kabushiki Kaisha Toshiba Semiconductor memory with peripheral transistors having gate insulator thickness being thinner than thickness of memory and select transistors
JP2007129136A (ja) * 2005-11-07 2007-05-24 Toshiba Corp 半導体記憶装置及びその製造方法
US7566926B2 (en) 2005-06-24 2009-07-28 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7012295B2 (en) 2003-07-04 2006-03-14 Kabushiki Kaisha Toshiba Semiconductor memory with peripheral transistors having gate insulator thickness being thinner than thickness of memory and select transistors
US7122430B2 (en) 2003-07-04 2006-10-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory and manufacturing method for the same
JP2005116551A (ja) * 2003-10-02 2005-04-28 Toshiba Corp 半導体記憶装置とその製造方法
US7919389B2 (en) 2003-10-02 2011-04-05 Kabushiki Kaisha Toshiba Semiconductor memory device that is resistant to high voltages and a method of manufacturing the same
JP2005150689A (ja) * 2003-11-13 2005-06-09 Hynix Semiconductor Inc Ｎａｎｄフラッシュ素子の製造方法
JP2005150678A (ja) * 2003-11-19 2005-06-09 Hynix Semiconductor Inc フラッシュメモリ素子の製造方法
US7566926B2 (en) 2005-06-24 2009-07-28 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory
US7772102B2 (en) 2005-06-24 2010-08-10 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory and fabrication method for the same
JP2007129136A (ja) * 2005-11-07 2007-05-24 Toshiba Corp 半導体記憶装置及びその製造方法
US8043930B2 (en) 2005-11-07 2011-10-25 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing the same

Similar Documents

Publication Publication Date Title
US6222225B1 (en) Semiconductor device and manufacturing method thereof
US6759706B2 (en) Nonvolatile semiconductor memory device with improved gate oxide film arrangements
US7439134B1 (en) Method for process integration of non-volatile memory cell transistors with transistors of another type
US8674431B2 (en) Non-volatile semiconductor memory device and method of manufacturing the same
JP2002016154A (ja) 半導体装置及びその製造方法
JP2006339446A (ja) 半導体装置およびその製造方法
JPH10335497A (ja) 半導体不揮発性記憶装置およびその製造方法
JPH11163304A (ja) 不揮発性半導体記憶装置及びその製造方法
KR100420842B1 (ko) 반도체 집적 회로 장치의 제조 방법
US20030205756A1 (en) Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same
JPH10163456A (ja) 半導体装置の製造方法
JP2003037251A (ja) 半導体装置及び半導体装置の製造方法
US6472259B1 (en) Method of manufacturing semiconductor device
JP4064611B2 (ja) 半導体装置
JPH10289990A (ja) 半導体装置の製造方法
WO2000060661A1 (en) Method of manufacturing semiconductor device
JP3383404B2 (ja) 半導体装置の製造方法
US20050029572A1 (en) Fabrication of non-volatile memory cell
US6680510B2 (en) Non-volatile memory device having a cell transistor and a non-cell transistor
JP4077177B2 (ja) 半導体メモリの製造方法
JP3309960B2 (ja) 不揮発性半導体記憶装置の製造方法
JP2867935B2 (ja) 半導体装置の製造方法
EP1770772B1 (en) Process for manufacturing a non-volatile memory device
JPH06310733A (ja) 半導体記憶装置の製造方法
JPH06310734A (ja) 半導体記憶装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040930

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040930

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060301

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060314

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060515

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070320

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070521

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20081111