JP2003046022A - Electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic apparatus having improved heat-radiating characteristics. SOLUTION: This electronic apparatus has a metal core substrate having a metal plate, an insulating layer formed on the surface of the metal plate and a conductor layer formed on the insulating layer, and an electronic component, where the conductive layer and the terminals of the electronic component are connected with each other, and a high thermal conductive member is provided in contact with both the metal plate and the electronic component.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an electronic device having a metal core substrate on which electronic parts are mounted and a manufacturing technique thereof.

[0002]

2. Description of the Related Art In an electronic device having an electronic substrate, it is necessary to prevent defects due to heat generation from electronic components. Therefore, a thermal cycle test will be conducted before shipment. In particular, in an on-vehicle electronic device such as an ECU, the presence or absence of heat generated in the LSI chip due to the turning on / off of the engine affects the temperature change in the vehicle body due to changes in the environment, etc. , -40
-120 degrees: General rules for environmental testing of automobile electronic equipment JASOD0
It is necessary to endure 01). Nowadays, the ECU tends to be arranged closer to the engine, and further, the upper limit of this temperature range tends to be higher. When exposed to such a thermal cycle, the performance of the electronic components in the ECU becomes unstable, and a connection failure between the electronic component mounting board and the electronic components is likely to occur. That is, the electronic device is required to have a high heat dissipation property, and particularly the vehicle-mounted electronic device such as the ECU is required to have a better heat dissipation property than general electronic components.

Japanese Patent Application Laid-Open No. 6-169189 discloses a conventional technique relating to the structure of a general electronic device in consideration of heat generation of electronic components mounted on a substrate.

In this publication, a heat dissipation electrode pad connected to the ground via a through hole is formed on a printed circuit board having a ground in the inner layer, and the heat dissipation electrode pad and the chip heat generating component are provided. An electronic circuit board mounted so as to be aligned with the heat dissipation electrode is described. The structure of this electronic circuit board ensures the heat dissipation of the printed circuit board by allowing the heat generated by the chip-type heat-generating component to escape to the ground through the heat dissipation electrode, the heat dissipation electrode pad, and the through hole.

Further, there is a metal core substrate as a substrate for general electronic parts, and Japanese Patent Laid-Open No. Hei 7-326690 is a conventional technique in consideration of heat dissipation of the metal core substrate.

In this publication, an internal wiring pattern is formed on a metal core substrate, outer leads are connected to the internal wiring pattern, and the internal wiring pattern is formed by processing a thin film, for example, by etching a copper foil. And forming a portion of the metal core substrate, on which the internal wiring pattern is formed, on which the chip component is mounted in the recess.

[0007]

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
Since No. 9 uses a glass epoxy material as the core of the substrate, it does not describe anything about a heat dissipation structure corresponding to the type of the substrate or a metal core substrate. In addition, the ground terminal of the semiconductor component has a constant size like other signal terminals, and is not sufficient to secure heat dissipation.

Further, in Japanese Patent Application Laid-Open No. 7-326690, since a metal core substrate is used, the heat diffusion efficiency of the substrate itself is improved, but an organic adhesive such as an epoxy resin is provided between the metal core substrate and the electronic component. Since it has an organic insulating layer such as or polyimide, the heat conductivity from the electronic component to the substrate is low. That is, it cannot be said that the thermal conductivity from the electronic component to the mounting substrate is sufficiently taken into consideration.

Further, there is no problem with connection defects between semiconductor component terminals and wiring that occur when wiring is formed on a metal core substrate by these conventional techniques and a flip chip type semiconductor component is adopted on the wired metal core substrate. No consideration is given.

Also, when an electronic board is mounted on another board as an interposer, or an MCM in which a plurality of chips are mounted.
No consideration is given to the heat dissipation structure in the case of (multi-chip module).

An object of the present invention is to improve the heat dissipation of the electronic board by using the structure of the metal core board, and to improve the heat dissipation (heat resistance) of the entire electronic component.

Also, a substrate having an interposer or an M
It is to improve the heat dissipation (heat resistance) of the entire electronic device having a substrate having a CM structure.

[0013]

According to one embodiment of the present invention, there is provided a metal core substrate comprising a core material composed of a metal plate or a composite metal plate, and a wiring layer formed on the core material, An electronic device having the wiring layer and the electronic component to which a terminal is connected, wherein the high thermal conductivity member is arranged such that the core member and the electronic component are adjacent to each other via a high thermal conductivity member. There is something.

With such a structure, the heat dissipation of the electronic device is improved.

When such a substrate is used as an interposer (which means a substrate to be mounted on another substrate), the other substrate on which the interposer is mounted and the high-heat-generating electronic component have a high heat-conducting member. The structure in which the high heat conductive member is arranged so as to be in contact with each other, or another substrate on which the interposer is mounted and the metal plate constituting the substrate used as the interposer are in contact with each other through the high heat conductive member. An electronic device having a structure in which a high heat conductive member is arranged is preferable.

An iron-based alloy containing at least one of nickel, chromium, cobalt, and aluminum on the above-mentioned metal plate, or an iron-based composite material obtained by applying copper clad to the iron-based alloy, tungsten, copper, molybdenum, tantalum,
By using nickel, aluminum or the like, it becomes possible to provide high thermal conductivity and high rigidity. For example, as shown in Table 1, when copper or aluminum is used, not only can it be manufactured at low cost, but also the thermal conductivity is high, so that the heat dissipation is good. When the main substrate is a substrate made of ceramics such as alumina or glass ceramic, Invar (iron-36
wt% nickel alloy) and 42 alloy (iron-42 wt% nickel alloy) have high elasticity and a low coefficient of thermal expansion. Therefore, by using a metal core interposer that uses them, the difference in the coefficient of thermal expansion between the interposer and the main board can be reduced. By making it smaller, the solder connection reliability can be improved. In particular, alloys containing iron-nickel as a main component, such as Invar and 42 alloy, are changed by changing their composition.
It is possible to use an interposer having a coefficient of thermal expansion according to the type of the main board, and it is possible to improve reliability of solder connection between the main board and the interposer.

[0017]

[Table 1] Further, when such a highly elastic metal containing iron-nickel as a main component is used as the metal plate, since they have low thermal conductivity, the surface is coated with a member having high thermal conductivity, for example, copper plating. The structure (composite metal plate) is preferable. This coating can be effectively used also when performing a roughening treatment for improving the adhesion to the insulating resin.

The high heat conductive member described so far is a resin material (heat conductivity: 0.2 to 0.3 W // W) which is generally used as an insulating material for a wiring board.
m ・ k) is a material with higher thermal conductivity than
At least one of Al, silver, gold, conductive resin, copper, and solder, or a material combining these (thermal conductivity:
It is preferable to use several W / m · k or more).

In particular, if at least solder is used for the connection, it can be formed by using the mounting process (reflow) of the electronic component, so that the process steps can be simplified.

In consideration of mounting electronic components, a metal (particularly, Al, silver, and gold) electrode is formed on the electronic component, and the electrode and the metal plate are connected by solder, conductive resin, or the like. Is desirable. In some cases, in order to reduce costs, electronic components not provided with metal electrodes only for connection may be connected with a conductive resin such as silver paste or an adhesive. However, the adhesive is not advantageous in terms of heat dissipation.

Further, the conductor layers described so far are made of stainless steel, nichrome, which are generally used for multilayer wiring boards.
A foil such as tungsten or aluminum may be used, but a copper foil is preferable.

As a method for forming the heat dissipation via hole, a drill, plasma, or photolithography of a resin in which a photosensitive material is kneaded can be used, but laser processing is preferable. As a laser, a high energy output CO 2 laser, an ultraviolet laser, a Xe laser, an excimer laser, a YAG laser, a YLF laser, an Ar laser, or the like can be used, but a CO 2 laser or an ultraviolet laser can be used. preferable. In particular, the ultraviolet laser has a feature that it can decompose a resin without carbonizing it and form a via hole having a minute diameter, so that unnecessary contact between the high heat conductive member and the signal wiring can be prevented. Moreover, if a drill is used, the manufacturing cost can be reduced.

For the plating of the wiring forming method used in the present invention,
It is also preferable to use any of copper, tin, solder, nickel, chromium, gold, and composite materials thereof.

The method of connecting the electronic component and the metal plate of the substrate through the heat dissipation via hole used in the present invention includes a method of connecting by metal plating, a conductive material (resin / adhesive mixed with metal filler, conductive material). Resin or the like) is applied and filled in the via hole, or a method of filling solder is used.

[0025]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below. <Embodiment 1> FIG. 1 is a diagram showing a manufacturing flow of an electronic substrate used in an electronic device according to the present invention.

First, an example of the electronic substrate manufactured according to this embodiment will be described with reference to step (g) in FIG.

The electronic substrate according to this embodiment is the metal plate 101.
A composite metal plate 103 which is a core material including (42 alloy having a thickness of 0.2 mm) and a roughened plating layer 102 covering the surface of the metal plate 101, and insulation on the composite metal plate 103. A wiring layer 104 composed of an epoxy resin (about 80 μm thick) which is a layer, a copper foil (about 18 μm thick) which is a conductor layer laminated and adhered by the epoxy resin, and a via hole 107 opened in the epoxy resin; A heat dissipation via hole 108 (113), a thick film copper plating 109,
Solder resist 114 and external terminals 118 (Ag, A
Either u or aluminum, but in this embodiment A
u), a semiconductor component 115, and a heat dissipation electrode 117.
It is composed of (Au) and solder 116, and a solder, which is one of the high thermal conductive members, is formed so as to fill the heat dissipation via hole 113 and contact the composite metal plate 103 and the heat dissipation electrode 117.

As described above, a high heat conductive member composed of two layers of the heat radiating electrode 117 formed in the region other than the external terminal 118 of the semiconductor component and the solder filled in the heat radiating via hole 113 is generated from the semiconductor component 101. Since the heat is diffused in the substrate, the heat does not stay in a part of the electronic substrate, and the heat dissipation of the entire electronic component can be improved.

Next, an example of a method of manufacturing this electronic substrate will be described. This manufacturing method is performed by the following steps.

Step (a): As the metal plate 101, 42 alloy (iron-42 wt% nickel alloy) having a thickness of 0.2 mm is prepared. Copper alloy 102 is applied to 42 alloy of the metal plate 101 to improve thermal conductivity. Further, the surface of the copper plating 102 is roughened to form the composite metal plate 103.

Step (b): After the step (a), a resin (about 80 μm thick) is applied on one surface of the composite metal plate to a thickness of about 18 μm.
A metal core substrate 105 is formed by laminating and adhering thick copper foils 104. It is cheaper to stack the prepreg and copper foil here. Copper foil with resin (RCF; Resin)
The use of Coated Copper Foil) is advantageous for the miniaturization because it has good laser drilling property in the later process and electric contact resistance after the substrate is completed.

Step (c): After the step (b), a part of the copper foil 106 of the metal core substrate 105 is removed, and then the epoxy resin is dissolved and removed by irradiation of a CO 2 laser. Heat dissipation via hole 108 to reach
Then, a via hole 107 for signal wiring is formed. Also,
The via holes may be formed by a drill, which is inexpensive in this case.

Step (d): After the step (c), a resin residue is removed by the potassium permanganate method, and then a thin chemical copper plating and an electrolytic copper plating solution are sequentially added to the thick film copper. The plating 109 is deposited, and the composite metal plate 103 is inserted through the via hole 107 and the heat dissipation via hole 108.
Conduct electrical contact with the surface copper foil.

Step (e): After the step (d), the etching resist 1 is formed on the wirings and lands of the surface copper foil.
10 is laminated and the wiring layer 111 is formed by etching using ferric chloride.

Step (f): The above steps (b) to (e) are repeated to form the multilayer wiring layer 111. After forming the multi-layered wiring layer, the electrode 112 that serves as a terminal of the board-side wiring and the heat dissipation via hole 113 are formed.

Step (g): Solder resist 114 is laminated on a region other than the regions where electrodes 112 (terminals on the substrate side) and heat-dissipating via holes 113 are formed, so that external terminals 118 (of the device itself) of semiconductor component 115 are laminated. An electrode (terminal) 112 of the wiring on the substrate is formed, which is connected to a gold-plated external terminal or a gold-plated rewiring terminal that is rewired from the terminal of the element itself. After that, the external terminal 1 formed on the surface of the semiconductor component 115 other than the external terminal 1
A heat-radiating electrode 117 insulated from 18 is formed on the semiconductor component. Next, the heat dissipation electrode 117 and the composite metal plate 10
The heat-dissipating via holes 113 between 3 are filled with solder slightly higher than the solder resist, and the solder is printed between the external terminals 118 and the electrodes 112.

Thereafter, the semiconductor component is placed and reflowed to solder-connect the semiconductor component 115 to the substrate.

According to the manufacturing method of this embodiment, since solder is used to connect the heat dissipation electrode 117 and the composite metal plate 103, the heat dissipation electrode 117 is used in the reflow process used to connect the external terminal 118 and the electrode 112. Thus, the composite metal plate 103 can be connected, and an increase in the number of steps can be suppressed.

Further, since the high heat conductive member is formed in two layers, the height of the lower layer high heat conductive member can be adjusted. Since the height of the external terminal 118 and the height of the heat dissipation electrode 117 can be made substantially the same, the reflow conditions can be made substantially the same.

Since a copper film, which is a material having a higher heat conductivity than the metal plate (42 alloy), is formed on the surface of the metal plate, high heat dissipation can be ensured. In addition, since the heat dissipation is ensured by the copper film and the coefficient of thermal expansion is controlled by the metal plate, it is possible to suppress the connection failure and the destruction of the electronic component due to the difference in the thermal expansion coefficient between the substrate and the electronic component. it can. Also,
Because a material with high rigidity and high elastic modulus is used for the metal plate,
It is possible to prevent a decrease in through hole density due to the thinning of the core substrate, and obtain excellent handling characteristics in manufacturing.

An iron-based alloy containing at least one of nickel, chromium, cobalt, and aluminum on the above-mentioned metal plate, or an iron-based composite material obtained by copper-cladding the iron-based alloy, tungsten, copper, molybdenum, tantalum,
By using nickel, aluminum or the like, it becomes possible to provide high thermal conductivity and high rigidity. For example, as shown in Table 1, when copper or aluminum is used, not only can it be manufactured at low cost, but also the thermal conductivity is high, so that the heat dissipation is good. When the main substrate is made of a ceramic such as alumina or glass ceramic, Invar (iron-36 wt% nickel alloy) or 42 alloy (iron-4) having a high elastic modulus is used.
Since the 2 wt% nickel alloy) has a low coefficient of thermal expansion, it is possible to reduce the difference in the coefficient of thermal expansion between the interposer and the main board by using the metal core interposer using them, and improve the solder connection reliability. In particular, alloys containing iron-nickel as a main component, such as Invar and 42 alloy, can be used as an interposer having a coefficient of thermal expansion according to the type of the main substrate by changing the composition thereof. The reliability of solder connection between the interposer and the interposer can be improved.

Further, when such a highly elastic metal containing iron-nickel as a main component is used as the metal plate, since they have a low thermal conductivity, the surface thereof has a high thermal conductivity, for example, copper plating. It is preferable that the structure (composite metal plate) is covered with. This coating can be effectively used also when performing a roughening treatment for improving the adhesion to the insulating resin.

The high heat conductive member described so far is a resin material (heat conductivity: 0.2 to 0.3 W /
m ・ k) is a material with higher thermal conductivity than
At least one of Al, silver, gold, conductive resin, copper, and solder, or a material combining these (thermal conductivity:
It is preferable to use several W / m · k or more).

In particular, when solder is used for the connection, it can be formed by the mounting process (reflow) of the electronic component, so that the process steps can be simplified.

In consideration of mounting on electronic parts, electrodes of metal (in particular, Al, silver, and gold) are formed on the electronic parts, and the electrodes and the metal plate are connected by solder, conductive resin, or the like. It is desirable to have a configuration.

Further, the conductor layers described so far are made of stainless steel, nichrome, which are generally used for multilayer wiring boards.
A foil such as tungsten or aluminum may be used, but a copper foil is preferable.

As a method of forming the heat dissipation via hole, photolithography of a resin in which a drill, plasma, or a photosensitive material is kneaded can be used, but laser processing is preferable. As a laser, a high energy output CO 2 laser, an ultraviolet laser, a Xe laser, an excimer laser, a YAG laser, a YLF laser, an Ar laser, or the like can be used, but a CO 2 laser or an ultraviolet laser can be used. preferable. In particular, the ultraviolet laser has a feature that it can decompose a resin without carbonizing it and form a via hole having a minute diameter, so that unnecessary contact between the high heat conductive member and the signal wiring can be prevented. The heat dissipation via hole can be formed by collectively forming a plurality of insulating layers and wiring layers. That is, since the counterbore processing 113 that reaches the composite metal plate 103 from the substrate surface can be performed in the step (f) and the counterbore processing 108 in the step (c) can be omitted, it is possible to reduce the cost by reducing the number of steps. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG. 45 (a).

For the plating of the wiring forming method used in the present invention,
It is also preferable to use any of copper, tin, solder, nickel, chromium, gold, and composite materials thereof.

The method of connecting the electronic component and the metal plate of the substrate through the heat-dissipating via hole used in the present invention includes a method of connecting by metal plating, a conductive material (resin / adhesive mixed with metal filler, conductive material). Resin or the like) is applied and filled in the via hole, or a method of filling solder is used. Example 2 Example 2 will be described with reference to FIG. 2, which is a structural cross-sectional view of an electronic substrate.

The structure is the same as that of the first embodiment except that the multilayer wiring layer 201 is laminated on both surfaces of the composite metal plate.

In this structure, prior to the step (b) of Example 1, steps (b) to (f) are sequentially performed except for the formation of a heat dissipation via hole on the opposite surface of the substrate, and Inversion is carried out to carry out (b) to (g).

In the structure of this embodiment, since the front and back surfaces of the metal core substrate are close to each other, the thermal expansion coefficients of the front and back surfaces around the core material are close to each other, so that the warpage of the substrate due to the bimetal effect is reduced. According to the present embodiment, the connection reliability between the external terminal of the semiconductor component and the electrode of the electronic substrate can be improved as compared with the first embodiment. Moreover, since the core material of the substrate can be made thin, the weight and cost of the substrate can be reduced. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. FIG. 45 shows the structure of the end surface of the heat dissipation via hole at this time.
FIG. 45 (a) shows the structure of the end surface of the heat dissipation via hole in the step shown in FIG. 1 (b). <Embodiment 3> Embodiment 3 will be described with reference to FIG. 3 showing a flow of manufacturing an electronic substrate.

(Delete one sentence)

The structure of the third embodiment differs from the structure of the second embodiment in that a window 303 is formed in a part of the composite metal plate 305, and a copper-plated through hole 312 formed using the window 303 is used. The point is that it is connected to the wiring layer formed on the other surface.

(Deleted) A manufacturing method capable of manufacturing this structure will be described with reference to FIGS.

Step (a): The metal plate 301 has a thickness of 0.
Prepare 1 mm of 42 alloy. Next, etching resists 302 are laminated on both surfaces of the metal plate, and exposed and developed from both surfaces to remove the resist at the portions where the windows 303 are formed. Further, the window 303 is formed in the metal plate by etching using a ferric chloride solution. As this window, 0.2 mm ² is arranged at 0.4 mm intervals and arranged at necessary positions.

Step (b): Copper plating 30 on metal plate
By applying No. 4, the electrical conductivity is improved and the composite metal plate is formed. After this formation, the surface of the copper plating is roughened.

Step (c): A resin-coated copper foil 306 or a resin prepreg and a copper foil are separately laminated and adhered to both surfaces of the composite metal plate to form a metal core substrate 307.

Step (d): Window 303 of composite metal plate 301
And after removing a part of the surface copper foil 308 in a region other than the window, a through hole 309 penetrating the window is obtained by irradiating a CO 2 laser to dissolve and remove the epoxy resin.
A via hole 310 having a bottom of the composite metal plate and a heat radiating via hole 311 are formed.

Step (e): After the resin residue is removed by the potassium permanganate method, the thin film copper plating 312 is deposited by sequentially adding it to thin chemical copper plating and electrolytic copper plating solution, and then through. Conduction is provided between the copper foils on the front and back of the substrate via the hole 309, and between the composite metal plate and the copper foil on the uppermost surface via the via hole 310 and the heat dissipation via hole 311.

Step (f): A multilayer wiring layer 3 is formed by laminating an etching resist 313 on the electrodes and lands of the wiring on the substrate and by etching with ferric chloride.
The wiring of the first layer 14 is formed.

Step (g): The steps (c) to (e) are repeated to form a multilayer wiring layer 314.

Step (h): Wiring electrode (terminal) 30 on the substrate
8 and a solder resist 315 is formed in a region excluding the copper plating 319 filling the heat dissipation via holes.

Next, the heat dissipation electrode 317 is formed on the semiconductor component at the same height as the external terminal. Finally, the semiconductor component 31
6, the external terminal 318 of FIG.
8. Semiconductor component 316 heat dissipation electrode 317 and copper plating 3
04 and 04 are connected using solder.

According to the structure of this embodiment, the degree of freedom in connecting the front and back wirings can be increased more than that of the second embodiment.
The degree of freedom in designing the wiring pattern is increased, and it becomes possible to mount electronic parts with higher performance and more functions. Example 1
As described above, if the heat-dissipating via hole is formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in the step (c) of FIG. 1 can be omitted. Is possible. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG. 45 (a). <Fourth Embodiment> A fourth embodiment will be described with reference to FIG. 4, which is a structural cross-sectional view of an electronic substrate.

The difference in structure between the fourth embodiment and the third embodiment is that
In the third embodiment, one heat-dissipating via hole 311 is filled with the high heat conductive member, whereas in the fourth embodiment, two heat-dissipating via hole portions 401 and 402 are provided and filled with solder.

Further, the structure of this embodiment is such that the heat dissipation via holes formed in the steps (c) and (d) of the third embodiment are divided into a plurality of parts by using another mask, so that the structure of the third embodiment is improved. Can be manufactured using the process of.

According to the structure of this embodiment, by reducing the size of each heat dissipation via hole, the method of forming the via hole can be facilitated, and the cost can be reduced. Also,
Since it can be used as a heat dissipation path to reduce the space that cannot be used for wiring, etc., the board space can be used efficiently and the wiring design rule can be relaxed. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG.
5 (b) shows the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 (a). <Fifth Embodiment> A fifth embodiment will be described with reference to FIG. 5, which is a structural cross-sectional view of an electronic substrate.

The difference from the structure of the first embodiment is that the solder layer below the heat dissipation electrode 117 of FIG. 1 is filled with copper plating instead of solder, and the copper plating and the heat dissipation electrode are connected by solder. That is the point.

This structure is manufactured by the following steps. Steps (a) to (f): The same as in Example 1. Step (g): In step (g) of Example 1, the heat dissipation via holes are filled with solder, but in the present example, instead of filling the solder, copper plating is used to fill the substrate surface after filling. It is made flat by polishing.

After the above steps, the solder resist 515 is formed on the area of the substrate side wiring except the electrodes (terminals) and the copper plating.
Laminate. After that, after temporarily placing the semiconductor parts,
The external terminal 519 of the semiconductor component 516, the electrode 512 of the metal core substrate, the heat radiation electrode 518 of the semiconductor component 516, and the filled copper are connected by the solder 517.

According to the structure of this embodiment, since the heat dissipation via hole is filled with copper having high heat conductivity, the heat dissipation characteristic of the electronic substrate can be improved. Further, by making the height of the insulating layer and the height of the heat dissipation via holes substantially the same, it is possible to improve the solder connectivity and reduce the occurrence rate of voids.

Further, since the filled copper is connected by the solder, the external terminal 519 of the semiconductor component 516 and the electrode 512 are connected.
Since the connection with the heat dissipation electrode 518 can also be performed in the reflow step of connecting with, the manufacturing cost can be suppressed. As described in Example 1, if a heat dissipation via hole is formed in a plurality of insulating layers and wiring layers at once,
Since the counterbore processing 108 of the step (c) of FIG. 1 can be omitted, the cost can be reduced by reducing the number of steps. FIG. 45 shows the structure of the end surface of the heat dissipation via hole at this time.
FIG. 45 (a) shows the structure of the end surface of the heat dissipation via hole in the step shown in FIG. 1 (b). <Sixth Embodiment> A sixth embodiment will be described with reference to FIG. 6, which is a structural cross-sectional view of an electronic substrate.

The sixth embodiment has the same structure as the fifth embodiment except that the laminated wiring layer is also laminated on the other surface of the composite metal plate.

In the structure of this embodiment, before the step (b) of the fifth embodiment, steps (b) to (f) are sequentially carried out except that the heat dissipation via hole is not formed on the surface opposite to the substrate. rear,
It can be manufactured by inverting the substrate.

According to the structure of this embodiment, the material composition of the front and back surfaces of the metal core substrate is close to each other, so that the thermal expansion coefficients of the front and back surfaces are approximated with the core material as the center. Therefore, the warp of the substrate can be suppressed, and the connection reliability between the external terminal 519 of the semiconductor component and the electrode 512 of the substrate side wiring can be improved. As described in Example 1, if a heat dissipation via hole is formed in a plurality of insulating layers and wiring layers at once,
Since the counterbore processing 108 of the step (c) of FIG. 1 can be omitted, the cost can be reduced by reducing the number of steps. FIG. 45 shows the structure of the end surface of the heat dissipation via hole at this time.
FIG. 45 (a) shows the structure of the end surface of the heat dissipation via hole in the step shown in FIG. 1 (b). <Example 7> Example 7 will be described with reference to FIG. 7, which is a structural cross-sectional view of an electronic substrate.

The structure of the seventh embodiment is the same as that of the sixth embodiment except that a via hole 701 is provided which penetrates a window in which wiring structures above and below the metal plate are provided in the metal plate. The formation of the through hole 701 uses the process of the third embodiment.

According to the structure of the seventh embodiment, the density of via holes connecting the upper and lower wiring layers can be increased as compared with the structure of the sixth embodiment, so that the wiring density of the substrate can be improved. (Delete one sentence)

This structure was formed before the step (a) in Example 6
It can be manufactured by carrying out the step (a) of Example 3. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG.
FIG. 45A shows the structure of the end surface of the heat-dissipating via hole according to the process shown in FIG. <Embodiment 8> Embodiment 8 will be described with reference to FIG. 8 which is a structural cross-sectional view of an electronic substrate.

The structure of the eighth embodiment differs from the structure of the seventh embodiment in that a heat dissipation via hole 801 connected to the composite metal plate is used.
Is divided into a plurality of parts, the via hole is filled with copper plating, and the copper plating is connected to the heat dissipation electrode of the semiconductor component via solder.

This structure corresponds to the steps (b) to (6) in Example 6.
It can be manufactured by changing the removal pattern of the insulating layer and the conductor layer in (g).

According to the structure of the eighth embodiment, as compared with the seventh embodiment, it is possible to increase the space where wiring can be provided, and it is possible to reduce the area of the substrate and relax the wiring design rule. . Also, the cost for forming the heat dissipation via portion can be reduced. As described in Example 1, if a heat dissipation via hole is formed in a plurality of insulating layers and wiring layers at once, the structure shown in FIG.
Since the counterbore processing 108 in the step (c) can be omitted, the cost can be reduced by reducing the number of steps. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG.
FIG. 45A shows the structure of the end surface of the heat-dissipating via hole by the process described in FIG. <Embodiment 9> Embodiment 9 will be described with reference to FIG. 9 which is a structural cross-sectional view of an electronic substrate.

The structure of the ninth embodiment differs from that of the eighth embodiment in that the via hole 801 is not formed from the uppermost layer of the wiring layer to the composite metal plate, but in the region where the first layer via hole of the wiring layer is formed. The point that the first wiring layer is formed in
The second layer to the uppermost layer of the via hole 801 is the via hole 901 filled with the copper plating 902.

In the structure of the ninth embodiment, the thermal conductivity in the heat dissipation via hole portion is slightly inferior to that of the eighth embodiment, but the cost of the via hole drilling process can be reduced because the step of drilling the via hole can be omitted once. <Example 10> Example 10 will be described with reference to FIG. 10, which is a structural cross-sectional view of an electronic substrate.

The structure of the tenth embodiment differs from that of the seventh embodiment in that the second layer of heat dissipation via holes of the wiring layer are separately provided and the inside is filled with copper plating 1002.
This is that the heat-radiating electrodes at some points are connected to the semiconductor component by common solder.

According to the structure of the tenth embodiment, the heat conductivity in the heat dissipation via hole portion is improved, so that the heat when driving the semiconductor component can be diffused more efficiently.

Also, this structure can be manufactured by the manufacturing method of the seventh embodiment by changing the pattern of the via hole. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. FIG. 45 shows the structure of the end surface of the heat dissipation via hole at this time.
FIG. 45 (a) shows the structure of the end surface of the heat dissipation via hole in the step shown in FIG. 1 (b). <Embodiment 11> Embodiment 11 will be described with reference to FIG. 11, which is a structural cross-sectional view of an electronic substrate.

The structure of Example 11 is such that the external terminal of the semiconductor component is the bump type terminal 1102, the electrode of the substrate connected to the bump type terminal 1102 is the bump type electrode 1103, and heat dissipation is performed. The electrode is a heat radiation bump type electrode 1105, the bump type terminal 1106 is formed on the copper plating filled in the heat radiation via hole, the bump type terminal 1102 and the bump type electrode 1103.
And are electrically connected by an anisotropic conductive resin,
And a bump type electrode 1105 for heat dissipation and a bump type terminal 110.
Example 7 is the same as Example 7 except that it is electrically connected to No. 3 by an anisotropic conductive resin.

More specifically, steps (a) to (5) of Example 5 are repeated.
By carrying out (f), after forming the laminated wiring layer, copper plating is applied to the heat radiating via hole so that the height is close to the uppermost layer of the wiring layer. A solder resist is formed on the area excluding the electrodes and via holes. Next, bump type electrodes 1103 are formed on the wiring terminals of the substrate, and bump type terminals 1106 are formed on the copper plating filled in the heat dissipation via holes. Bump type terminals 1102, 1 are used as external terminals of semiconductor parts.
Form 105. Anisotropic conductive resin is sandwiched between the formed bump-type terminals (electrodes) 1102 and 1103, and between the terminals (electrodes) 1105 and 1106, and thermocompression bonding is performed for connection.

According to the structure of this embodiment, since the mounting can be performed at a temperature lower than that of the connection process using solder, the thermal history at the time of manufacturing the substrate can be reduced. Further, the material cost can be reduced.
As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat dissipation via hole is shown in FIG.
5 (a). <Embodiment 12> In Embodiment 12, as shown in FIG. 12, the metal core substrate and the surface of the semiconductor component having no external terminals are placed so as to face each other, and the electrodes on the surface of the metal core substrate and the outside of the semiconductor component are bonded by wire bonding. The third embodiment is the same as the third embodiment except that the terminals are connected and that only the filled solder is provided without providing the heat dissipation electrode.

According to the structure of the present embodiment, it is possible to cope with the connection by the commonly used wire bonding and to increase the heat diffusion to the composite metal plate by increasing the connection area between the semiconductor component and the composite metal plate. You can As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG. 45 (a). <Embodiment 13> As shown in FIG. 13, Embodiment 13 is a surface (rear surface) having no external terminals of the metal core substrate and the semiconductor component.
Are placed facing each other, and the electrode on the surface of the metal core substrate is connected to the terminal of the semiconductor component by wire bonding, and the plated plating and the plating and the semiconductor component rear surface without providing the heat dissipation electrode. Example 7 is the same as Example 7 except that is connected with solder.

According to the structure of this embodiment, the increase of the connection area between the semiconductor component and the composite metal plate can further enhance the heat diffusion to the composite metal plate. As described in Example 1, if the heat-dissipating via holes are collectively formed by a plurality of insulating layers and wiring layers, the spot facing process 1 in the step (c) of FIG. 1 is performed.
Since 08 can be omitted, the cost can be reduced by reducing the number of steps. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG. 45 (a). <Embodiment 14> As shown in FIG. 14, the structure of Embodiment 14 is such that a via hole larger than the main surface of the semiconductor component 1401 is formed to expose the composite metal plate, and the semiconductor component is fitted to the bottom surface of the via hole and soldered. The external terminal 1402 of the semiconductor component and the electrode (wiring) 1404 of the metal core substrate side wiring are connected by wire bonding 1
The same as Example 1 except that the connection is made by 403. The connection between the semiconductor component 1401 and the composite metal plate may be silver paste or an adhesive other than solder. In this case, the metal layer for solder connection need not be formed on the semiconductor component, so that the cost can be reduced.

According to the structure of this embodiment, the heat diffusion efficiency can be improved and the manufacturing cost can be reduced. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. FIG. 45 shows the structure of the end surface of the heat dissipation via hole at this time.
FIG. 45 (a) shows the structure of the end surface of the heat dissipation via hole in the step shown in FIG. 1 (b). <Embodiment 15> Embodiment 15 is the same as Embodiment 15 except that the recess 1501 is provided in the composite metal portion of the metal core substrate on which the semiconductor component 901 is mounted and the semiconductor component 901 is mounted in the recess. Similar to 14.

According to the structure of this embodiment, the mounting position accuracy of the semiconductor can be improved, and the effect of improving the heat dissipation by reducing the thickness of the composite metal plate on the heat dissipation path can be obtained.

The structure of this embodiment can be prepared by adding a step of providing a recess to the composite metal plate before the step (a) of the twelfth embodiment (embodiment 1). As described in Example 1, if the heat-dissipating via holes are collectively formed by a plurality of insulating layers and wiring layers, the spot facing process 1 in the step (c) of FIG. 1 is performed.
Since 08 can be omitted, the cost can be reduced by reducing the number of steps. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG. 45 (a). <Example 16> In the structure of Example 16, the steps up to step (f) shown in FIG. 16 are performed by changing the pattern, and the semiconductor component 1 is inserted through the copper plating 1602 filled in the heat dissipation via holes.
Example 7 except that 601 was mounted on a metal core substrate and a heat dissipation electrode 1603 connected to a metal plate via a heat dissipation via hole was provided on the back surface of the semiconductor mounting surface.
Is the same as.

According to the structure of this embodiment, the heat can be diffused through the heat dissipation electrode, so that a more excellent cooling capacity can be added. The structure of this embodiment can be manufactured by the same process as that of the third embodiment except that via holes are provided on both sides. That is, it is possible to perform (a) to (g) of Example 3 on both sides except for the connection of the semiconductor components. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost.
The structure of the end surface of the heat dissipation via hole at this time is shown in FIG.
FIG. 45A shows the structure of the end surface of the heat-dissipating via hole by the process described in FIG. <Embodiment 17> In Embodiment 17, as shown in FIG. 17, a plurality of semiconductor components 1701 and 1702 are placed on the main surface of a metal core substrate, and further electronic components 1703 are mounted on the back surfaces of the semiconductor components 1701 and 1702. Other than the above, the same as Example 3.

According to the structure of the present embodiment, heat can be diffused through the heat dissipation electrode, so that an MCM structure with a better cooling capacity can be realized. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG. 45 (a). <Embodiment 18> Embodiment 18 will be described with reference to FIG.

In FIG. 18, reference numerals 1801 to 1812 designate 101 of the first embodiment.
~ 112 shows the same configuration, steps (a) ~ (f),
This is the same except that the electrode 1812 is formed and the electrode 1813 is formed. Step (g): After forming the electrode 1813, a solder resist 1815 is laminated on a desired portion except at least the electrode and the heat dissipation via hole, and the terminal of the semiconductor component 1816 and the electrode 1812, the surface of the semiconductor component 1816 and the heat dissipation via hole 1814 are formed. , Solder
Connected via 1817. Step (h): Finally, the electrode 1818 provided on the outermost layer of the printed board on which the copper wiring was laminated via the prepreg and the electrode 1813 of the metal core board were connected via the solder 1819.

According to the structure of this embodiment, the heat when driving the semiconductor component can be efficiently diffused. Furthermore, since the via hole and the radiating via hole portion have good electrical connection and a metal plate having high rigidity is used as the core, the handling in manufacturing is also excellent. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG.
FIG. 45A shows the structure of the end surface of the heat-dissipating via hole according to the process shown in FIG. <Embodiment 19> Embodiment 19 will be described with reference to FIG. In FIG. 19, 1901-1912 are the third embodiment
No. 301 to 312, and has the same structure as that of FIG. 3 except that the electrode 1915 is formed and the electrode 1916 is formed in steps (a) to (f). Electrode 1
After forming 915 and 1916, electroplating is further deposited from the composite metal plate and the heat dissipation via holes are filled with copper to form a heat dissipation electrode 1918 connected to the composite metal plate 1905. A solder resist 1919 is formed on a desired portion except at least the electrode and the heat dissipation electrode. The terminal of the semiconductor component 1920 and the electrode 1915 of the metal core substrate, and the surface of the semiconductor component 1920 and the heat dissipation electrode 1918 of the metal core substrate were placed and connected via the solder 1921. Finally, the electrode 1922 provided on the outermost layer of the printed board on which the copper wiring was laminated via the prepreg and the electrode 1916 of the metal core board were connected via the solder 1923.

According to the structure of this embodiment, the heat when driving the semiconductor component can be efficiently diffused. Since 42 alloy having high rigidity was used as the core, not only the through hole density in the core layer could be improved by thinning the core substrate, but also the handling in manufacturing was excellent. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat dissipation via hole is shown in FIG.
5 (a). <Embodiment 20> In Embodiment 20, as shown in FIG. 20, a heat dissipation electrode 2002 is provided at a mounting portion of a printed circuit board on which a metal core substrate on which a semiconductor component 2001 is mounted is mounted, and the semiconductor component 2001 and the heat dissipation electrode are provided. It was produced in the same manner as in Example 18 except that the 2002 and 2002 were connected via solder 2003.

According to the structure of this embodiment, the heat when driving the semiconductor component can be diffused more efficiently. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG.
FIG. 45A shows the structure of the end surface of the heat-dissipating via hole according to the process shown in FIG. <Example 21> In Example 21, as shown in FIG. 21, a semiconductor component 2103 is provided on one of the front and back heat radiating electrodes 2101 of a metal core substrate in which heat radiating electrodes 2101 and 2102 are formed on both surfaces of a composite metal plate.
A mounting structure was prepared in the same manner as in Example 19 except that the heat-dissipating electrode 2102 on the other side and the heat-dissipating electrode 2104 on the printed circuit board were connected via the solder 2105.

According to the structure of this embodiment, the heat diffusion efficiency when mounting the semiconductor on the printed circuit board can be improved. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG.
FIG. 45A shows the structure of the end surface of the heat-dissipating via hole according to the process shown in FIG. <Example 22> Example 22 was prepared in the same manner as Example 19 except that a plurality of semiconductor components 2201 and 2202 and a memory 2203 were mounted on a metal core substrate as shown in FIG.

According to the structure of this embodiment, the mounting density on the printed board can be improved. As described in Example 1,
If the heat dissipation via hole is formed in a plurality of insulating layers and wiring layers at once, the counterbore processing 108 in the step (c) of FIG. 1 can be omitted, so that the cost can be reduced by reducing the number of steps. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG. 45 (a). <Example 23> Example 23 is the same as Example 19 except that a plurality of metal core substrates 2304 and 2305 on which semiconductor components 2301, 2302 and 2303 are mounted are mounted on a printed circuit board 2306 as shown in FIG. Was prepared in the same manner as in.

According to the structure of this embodiment, the mounting density on the printed board can be improved. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG. 45 (a). Example 24 In Example 24, as shown in FIG. 24, an electrode 2403 of a metal core substrate 2402 on which a semiconductor component 2401 is mounted and an electrode 2405 formed on a ceramic substrate 2404 are soldered 2406.
An electronic device was produced in the same manner as in Example 19 except that the electronic device was connected and placed via.

According to the structure of this example, the heat resistance could be improved. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG.
5 (b) shows the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 (a). Example 25 In Example 25, as shown in FIG. 25, an electrode 2503 of a metal core substrate 2502 on which a semiconductor component 2501 is mounted, an electrode 2505 formed on a ceramic substrate 2504, and an inner metal plate 2506 of the metal core substrate are connected. An electronic device was produced in the same manner as in Example 19 except that the heat dissipation electrode 2507 and the heat dissipation electrode 2508 provided on the ceramic substrate were connected and placed via the solder 2509.

According to the structure of this example, the heat resistance could be improved. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG.
5 (b) shows the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 (a). <Example 26> In Example 26, as shown in FIG. 26, an electrode A2603 of a metal core substrate A2602 on which a semiconductor component 2601 was placed and an electrode B2605 formed on a metal core substrate B2604 were connected and placed via solder 2606. The same as Example 19 except that it was placed.

According to the structure of this example, the heat resistance could be improved. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG.
5 (b) shows the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 (a). <Example 27> In Example 27, as shown in FIG. 27, an electrode A27 of a metal core substrate A2702 on which a semiconductor component 2701 was mounted was used.
03, the electrode B2705 formed on the metal core board B2704, the heat dissipation electrode A2707 connected to the inner metal plate 2706 of the metal core board A, and the heat dissipation electrode B2708 provided on the metal core board B are connected and mounted via the solder 2709. Except for the above, it was prepared in the same manner as in Example 19.

According to the structure of this embodiment, heat resistance and heat dissipation to the main board can be improved. Example 1
As described above, if the heat-dissipating via hole is formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in the step (c) of FIG. 1 can be omitted. Is possible. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG. 45 (a). <Embodiment 28> As shown in FIG. 28, Embodiment 28 includes a plurality of heat dissipation via hole portions 2803 and 2804 connected to a composite metal plate 2802 of a metal core substrate 2801 and a semiconductor component 2805.
It was produced in the same manner as in Example 19 except that the connection was made via the solder 2806.

According to the structure of this embodiment, it is possible to diffuse the stress due to heat when the semiconductor component is driven. Further, since the process of forming the heat dissipation via hole is simplified, the cost can be reduced. As described in Example 1, if a heat dissipation via hole is formed in a plurality of insulating layers and wiring layers at once,
Since the counterbore processing 108 of the step (c) of FIG. 1 can be omitted, the cost can be reduced by reducing the number of steps. FIG. 45 shows the structure of the end surface of the heat dissipation via hole at this time.
FIG. 45 (a) shows the structure of the end surface of the heat dissipation via hole in the step shown in FIG. 1 (b). <Example 29> In Example 29, as shown in FIG. 29, a plurality of heat-dissipating via holes 2903 and 2904 connected to the composite metal plate 2902 of the metal core substrate 2901 were provided, electrolytic copper plating 2905 was filled, and solder 2906 was used. It was produced in the same manner as in Example 19 except that the semiconductor component 2907 was connected via.

According to the structure of this embodiment, it is possible to simplify the initial connecting property of the solder between the semiconductor component and the metal core substrate and the connecting process while maintaining the thermal diffusivity, and to reduce the cost. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. FIG. 45 shows the structure of the end surface of the heat dissipation via hole at this time.
FIG. 45 (a) shows the structure of the end surface of the heat dissipation via hole in the step shown in FIG. 1 (b). <Embodiment 30> As shown in FIG. 30, Embodiment 30 uses the second via via hole 3003 in the resin-coated copper foil portion of the first layer connected to the composite metal plate 3002 of the metal core substrate 3001.
A plurality of heat-dissipating via holes 3004 are provided in the resin-coated copper foil portion of the layer, these are filled by electrolytic copper plating, and these surfaces are connected to the semiconductor component 3007 via the solder 3006 as heat-dissipating electrodes 3005. Was prepared in the same manner as in Example 19.

According to the structure of this embodiment, it is possible to simplify the initial connecting property of the semiconductor component and the solder of the metal core substrate and the connecting process while maintaining the thermal diffusivity, and to reduce the cost. <Example 31> In Example 31, as shown in FIG. 31, one heat radiation via hole in the resin-coated copper foil portion of the first layer connected to the composite metal plate 3102 of the metal core substrate 3101 was plated with electrolytic copper 3103. And a plurality of heat dissipation via holes are provided in the second-layer resin-coated copper foil portion, and the inside is filled with electrolytic copper plating 3104. This is used as a heat dissipation electrode 3105 and a semiconductor component 3107 via solder 3106. Except for the connection
A mounting structure was produced in the same manner as in Example 19.

According to the structure of this embodiment, it is possible to simplify the initial connecting property of the semiconductor component and the solder of the metal core substrate and the connecting process while maintaining the thermal diffusivity, and to reduce the cost. <Example 32> In Example 32, as shown in FIG. 32, a bump type terminal 3202 of a semiconductor component 3201 and a bump type electrode 3204 of a metal core substrate 3203 are placed via an anisotropic conductive resin 3205. A mounting structure was produced in the same manner as in Example 19 except for the above.

According to the structure of this embodiment, the mounting can be performed at a temperature lower than that of the connection process using solder, so that the thermal history at the time of manufacturing the substrate can be reduced. Further, the material cost could be reduced.
As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat dissipation via hole is shown in FIG.
5 (a). <Example 33> In Example 33, as shown in FIG. 33, the metal core substrate 3301 and the surface of the semiconductor component 3302 having no terminals are placed to face each other, and the electrode 3304 on the surface of the metal core substrate and the semiconductor are mounted by wire bonding 3303. It was produced in the same manner as in Example 19 except that the terminal 3305 of the component was connected.

According to the structure of this embodiment, the increase of the connection area between the semiconductor component and the composite metal plate can enhance the heat diffusion to the composite metal plate. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the spot facing process 10 in the step (c) of FIG. 1 is performed.
Since 8 can be omitted, the cost can be reduced by reducing the number of steps. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG. 45 (a). <Example 34> In Example 34, as shown in FIG. 34, the exposed composite metal portion 3402 of the metal core substrate exposed more than the main surface of the semiconductor component 3401 and the back surface B of the surface A having the electrode A 3403 of the semiconductor component. And the electrode A
Example 19 was prepared in the same manner as in Example 19 except that the electrode B3404 formed on the surface of the resin-coated copper foil of the metal core substrate was connected by wire bonding 3405.

According to the structure of this embodiment, the heat diffusion efficiency can be improved and the manufacturing cost of the mounting structure can be reduced. Furthermore, as shown in Fig. 41, if the inner layer wiring can be applied to the area directly under the chip as a heat dissipation via hole smaller than the chip size, the heat dissipation will be slightly reduced, but the flexibility of wiring pattern design will be increased and the metal core The size of the board could be reduced. According to the relationship between the heat dissipation property and the area of the heat dissipation part represented in FIG. 40, it is possible to design the board in consideration of the heat dissipation property and the degree of freedom of the board wiring. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. FIG. 45 shows the structure of the end surface of the heat dissipation via hole at this time.
FIG. 45 (a) shows the structure of the end surface of the heat dissipation via hole in the step shown in FIG. 1 (b). <Example 35> Example 35 is a composite metal plate of a metal core substrate 3502 on which a semiconductor component 3501 is mounted as shown in FIG.
It was produced in the same manner as in Example 19 except that a recess was provided in a part of 3503 and the semiconductor component 3501 was placed in the recess.

According to the structure of this embodiment, the placement accuracy of the semiconductor can be improved, and the effect of improving the heat dissipation can be obtained by shortening the distance between the semiconductor component and the composite metal plate.
As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat dissipation via hole is shown in FIG.
5 (a). <Example 36> In Example 36, as shown in FIG.
Semiconductor component 3603 is mounted on metal core substrate 3604 via 3601 and heat dissipation electrode 3602, and heat dissipation electrode 3605 connected to the inner metal plate via a heat dissipation via hole is provided on the back surface of the semiconductor mounting surface. Was prepared in the same manner as in Example 19.

According to the structure of this embodiment, the heat can be diffused through the heat dissipation electrode, so that a more excellent cooling capacity can be added. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the spot facing process 10 in the step (c) of FIG. 1 is performed.
Since 8 can be omitted, the cost can be reduced by reducing the number of steps. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG. 45 (a).

<Example 37> In Example 37, as shown in FIG. 37, a portion 3706 in which a heat dissipation via hole was filled with copper plating on the back surface of the semiconductor mounting surface of the metal core substrate 3701.
Example 33 is the same as Example 33 except that is provided. As a result, the heat could be diffused more efficiently. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in step (c) of FIG. 1 can be omitted, so the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat dissipation via hole is shown in FIG.
5 (a). <Embodiment 38> Embodiment 38 is the same as Embodiment 37 except that it is used as a heat dissipation via hole smaller than the chip size, as shown in FIG. According to the structure of the present embodiment, the inner layer wiring can be provided even in the region immediately below the chip, and the heat dissipation is slightly lowered, but the degree of freedom in wiring pattern design can be increased and the size of the metal core substrate can be reduced. done. As described in Example 1, if a heat dissipation via hole is formed in a plurality of insulating layers and wiring layers at once,
Since the counterbore processing 108 of the step (c) of FIG. 1 can be omitted, the cost can be reduced by reducing the number of steps. FIG. 45 shows the structure of the end surface of the heat dissipation via hole at this time.
FIG. 45 (a) shows the structure of the end surface of the heat dissipation via hole in the step shown in FIG. 1 (b). <Example 39> In Example 39, as shown in FIG. 39, the diameter of the electrical connection electrode was made by solder resist on the surface of the copper plating filled portion of the heat dissipation via hole on the back surface side of the semiconductor mounting surface of the metal core substrate 3901. Example 3 except that a heat dissipation electrode having a size approximately the same as that of the above is formed, nickel and gold plating are applied for soldering, and solder connection with the main board is performed.
Similar to 7. According to this embodiment, the solder connectivity is improved. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in the step (c) of FIG. 1 can be omitted, so that the number of steps can be reduced. It is possible to reduce the cost.
The structure of the end surface of the heat dissipation via hole at this time is shown in FIG.
FIG. 45A shows the structure of the end surface of the heat-dissipating via hole by the process described in FIG. <Example 40> In Example 40, as shown in FIG. 40, the main board to which the metal core board A4001 is connected is also the metal core board B4002 in which heat dissipation vias are formed. Example 37
Is the same as. According to this embodiment, the heat dissipation to the main board and the heat dissipation from the main board are improved. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in the step (c) of FIG. 1 can be omitted, so that the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat dissipation via hole is shown in FIG.
5 (a). <Embodiment 41> In Embodiment 41, as shown in FIG. 41, the main board to which the metal core board A 4101 is connected is also a metal core board B 4102 in which heat dissipation vias are formed. Example 39
Is the same as. According to this embodiment, the heat dissipation to the main board and the heat dissipation from the main board are improved. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in the step (c) of FIG. 1 can be omitted, so that the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat dissipation via hole is shown in FIG.
5 (a). <Example 42> In Example 42, as shown in FIG. 42, the main substrate to which the metal core substrate 4201 is connected is a metal base substrate 4202 in which heat dissipation vias are formed, and these heat dissipation vias are connected by soldering. Is the same as in Example 37. According to this embodiment, the heat dissipation to the main board and the heat dissipation from the main board are improved. As described in Example 1, if the heat dissipation via hole is formed in a plurality of insulating layers and wiring layers at once, the step (c) in FIG.
Since the counterbore processing 108 can be omitted, the cost can be reduced by reducing the number of steps. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG.
Shown in. <Example 43> In Example 43, as shown in FIG. 43, an electrode A43 of a metal core substrate A4302 on which a semiconductor component 4301 is mounted is mounted.
03, the electrode B4305 formed on the metal base substrate B4304, the heat dissipation electrode A4307 connected to the metal plate 4306 serving as the base of the metal core substrate A, and the heat dissipation electrode B4308 provided on the metal base substrate B via the solder 4309. It was produced in the same manner as in Example 19 except that it was connected and placed. According to the structure of this example, not only the heat resistance and the heat dissipation to the main board were improved, but also the heat dissipation from the main board was improved. As described in Example 1, if the heat dissipation via holes are formed in a batch using a plurality of insulating layers and wiring layers, the counterbore processing 108 in the step (c) of FIG. 1 can be omitted, so that the number of steps can be reduced. It is possible to reduce the cost. The structure of the end surface of the heat dissipation via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat dissipation via hole is shown in FIG.
5 (a). <Embodiment 44> In Embodiment 44, as shown in FIG. 44, the main board to which the metal core board 4401 is connected is also the metal base board 4402 in which the heat dissipation vias are formed. Is the same as in Example 39. According to this embodiment, the heat dissipation to the main board and the heat dissipation from the main board are improved. As described in Example 1, if the heat dissipation via hole is formed in a plurality of insulating layers and wiring layers at once, the step (c) in FIG.
Since the counterbore processing 108 can be omitted, the cost can be reduced by reducing the number of steps. The structure of the end surface of the heat-dissipating via hole at this time is shown in FIG. 45 (b), and the structure of the end surface of the heat-dissipating via hole by the process shown in FIG. 1 is shown in FIG. 45 (a).
Shown in.

According to the present invention, it is possible to provide an electronic device having high heat dissipation.

[Brief description of drawings]

FIG. 1 is a diagram showing a manufacturing flow of an electronic substrate used for an electronic device according to the present invention.

FIG. 2 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 3 is a diagram showing a manufacturing flow of an electronic substrate used for an electronic device according to the present invention.

FIG. 4 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 5 is a diagram showing a manufacturing flow of an electronic substrate used for an electronic device according to the present invention.

FIG. 6 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 7 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 8 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 9 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 10 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 11 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 12 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 13 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 14 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 15 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 16 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 17 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 18 is a view showing a manufacturing flow of an electronic substrate used for the electronic device according to the present invention.

FIG. 19 is a diagram showing a manufacturing flow of an electronic substrate used for an electronic device according to the present invention.

FIG. 20 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 21 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 22 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 23 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 24 is a sectional structural view of an electronic substrate used for an electronic device according to the present invention.

FIG. 25 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 26 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 27 is a sectional structural view of an electronic substrate used for an electronic device according to the present invention.

FIG. 28 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 29 is a sectional structural view of an electronic substrate used for an electronic device according to the present invention.

FIG. 30 is a sectional structural view of an electronic substrate used for an electronic device according to the present invention.

FIG. 31 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 32 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 33 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 34 is a sectional structural view of an electronic substrate used for an electronic device according to the present invention.

FIG. 35 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 36 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 37 is a sectional structural view of an electronic substrate used in the electronic device according to the present invention.

FIG. 38 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 39 is a sectional structural view of an electronic substrate used in the electronic device according to the present invention.

FIG. 40 is a sectional structural view of an electronic substrate used for an electronic device according to the present invention.

FIG. 41 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 42 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 43 is a sectional structural view of an electronic substrate used in an electronic device according to the present invention.

FIG. 44 is a sectional structural view of an electronic substrate used in the electronic device according to the present invention.

FIG. 45 is a structural diagram of an end surface of a heat dissipation via hole according to the present invention.

[Explanation of symbols]

Metal plate ... 101 Plating layer ... 102 Composite metal plate ... 103 Beer hole ... 107 Wiring layer ... 104 Heat dissipation via hole ... 108 Thick film copper plating ... 109 Solder resist ... 114 External terminal ... 118 Semiconductor parts ・ ・ ・ 115 Heat dissipation electrode ... 117 Solder ... 116

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 23/12 S (72) Inventor Takehiko Hasebe 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Hitachi Ltd. Production Technology Laboratory (72) Inventor Nobuyuki Ushifusa 292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa Stock Company Hitachi, Ltd. Production Technology Laboratory (72) Inventor Shiro Yamashita 292, Yoshida-cho, Totsuka-ku, Yokohama Hitachi, Ltd., Production Engineering Laboratory (72) Inventor, Hiroyuki Hozoji, 292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa, Ltd. Familiar company F-term in Hitachi, Ltd. Production Technology Laboratory (reference) 5E315 AA01 BB01 BB15 CC01 CC16 DD16 DD17 DD20 D D25 DD29 GG01 5E336 AA04 BB03 BB19 CC32 CC58 EE03 GG03 5E338 AA03 AA18 BB05 BB13 BB25 BB75 CC08 CD32 EE02 5E346 AA03 AA11 AA12 AA15 BB01 BB16 CC02 CC08 CC31 DD02 DD03 DD12 DD32 GG15 GG15 EE15 FF31

Claims (22)

[Claims] 1. A metal core substrate comprising a core material composed of a metal plate or a composite metal plate, and a wiring layer composed of an insulating layer and a conductor layer formed on the core material; An electronic device having the electronic component in which a conductor layer and a terminal are connected to each other, the electronic device having a high heat conductive member in contact with the electronic component and the core material. . 2. The electronic device according to claim 1, wherein the high thermal conductivity member is composed of a plurality of layers. 3. The high heat conductive member according to claim 1, wherein the layer in contact with the electronic component is made of silver, gold or solder, and the layer in contact with the metal plate is made of copper, gold or solder. An electronic device characterized by being. 4. The electronic device according to claim 1, wherein the conductor layer and the terminal are connected by a flip chip method. 5. The electronic device according to claim 1, wherein the wiring layer is formed on both surfaces of the core material. 6. The high heat conductive member is formed between one surface of the core material and an electronic component according to claim 5, and the other surface of the core material is a surface of the substrate from the core material. An electronic device having a high thermal conductivity member formed therein. 7. The electronic substrate having the electronic component according to claim 1, wherein the electronic substrate is mounted on another substrate to be used as an interposer. An electronic device comprising a high heat conductive member in contact with the electronic device. 8. The electronic device according to claim 7, wherein the high thermal conductivity member is composed of a plurality of layers. 9. A core material comprising a metal plate or a composite metal plate, a wiring layer formed on one or both surfaces of the core material, and the electronic component having terminals connected to the wiring layer. An electronic device comprising: a first substrate; and a second substrate on which the first substrate is mounted and which is electrically connected to the wiring of the first substrate, the core material of the first substrate An electronic device comprising a high thermal conductive member in contact with the second substrate. 10. The electronic device according to claim 9, wherein the high thermal conductivity member is any one or more of a metal material, a metal plating, a solder material, and a resin containing a conductive metal filler. 11. The electronic device according to claim 9, wherein the high thermal conductivity member is a metal material, a metal plating material, a solder material, or a plurality thereof. 12. The electronic device according to claim 9, wherein the first substrate non-mounting surface of the second substrate is adhered to a housing cover. 13. The core material made of a metal plate or a composite metal plate, the wiring layer formed on the core material, and the wiring according to any one of claims 9 to 11. An electronic device, which is a metal core substrate having a layer and the electronic component to which a terminal is connected. 14. The electronic device according to claim 13, wherein the first substrate non-mounting surface of the second substrate is bonded to a housing cover. 15. The core material made of a metal plate or a composite metal plate, the wiring layer formed on one side of the core material, and the second substrate according to any one of claims 9 to 11. Having the electronic component in which the wiring layer and the terminal are connected,
An electronic device comprising a metal base substrate having a core metal exposed on a side having no wiring layer or insulating layer. 16. The electronic device according to claim 15, wherein a side of the second substrate having no wiring layer and no insulating layer is bonded to a housing cover. 17. The electronic device according to claim 9, further comprising a high thermal conductive member that is in contact with the first core material and the electronic component. 18. The electronic device according to claim 17, wherein the high thermal conductivity member is one or more of a metal material, a metal plating, a solder material, and a resin containing a conductive metal filler. 19. The electronic device according to claim 17, wherein the high thermal conductivity member is made of a metal material, a metal plating material, a solder material, or a plurality thereof. 20. The high thermal conductive member according to claim 12, comprising a metal core material of the first substrate and a metal core material or a metal base material of the second substrate. Electronic device. 21. The electronic device according to claim 20, wherein the high thermal conductivity member is one or more of a metal material, a metal plating, a solder material, and a resin containing a conductive metal filler. 22. The electronic device according to claim 20, wherein the high thermal conductivity member is made of a metal material, a metal plating material, a solder material, or a plurality thereof.